TESSERA Search Results
TESSERA Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TK-850/JG3H | TESSERA Technology | Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, KIT STARTER V850 JX3H | Original | 81 |
TESSERA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Arrays PGA / Z IF Pin Grid A rray / Zero Insertion Force (Pages 9-18) BGA / C SP (Ball Grid A rray / Chip Scale Packaging) (Pages 19-21) liBGA" / C SP (Micro Ball Grid A rray / Chip Scale Packaging) (Pages 22-30) ^iBGA is a a registered Tradem ark of Tessera Inc. All rights reserved. |
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Contextual Info: User’s Manual TK-850/JG3H Date published: Oct 2008 Rev. 1.0 TESSERA TECHNOLOGY INC. 2008 Printed in Japan TK-850/JG3H User’s Manual Windows and Windows XP are registered trademarks or trademarks of Microsoft Corporation in the United States and/or other countries. |
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TK-850/JG3H TK-850/JG3H SG-310 PG1112H TCS00219 UX60A-MB-5ST BLM41PG750S | |
sublvds to lvds
Abstract: sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 SN65LVDS305
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SN65LVDS310 SLLS836 27-BIT SN65LVDS305 SN65LVDS307) 24-Bit 405-Mbps sublvds to lvds sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 | |
power amplifier ic ta2040
Abstract: Nokia 6100 LCD TA2040 Transceiver Broadcom 3G RF interfacing 8051 with bluetooth modem Tripath TA2040 AMPLIFIER pixelworks L7205 tft interface with 8051 trw radar ac
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
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BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm | |
A115-A
Abstract: C101 SN65LVDS305 SN65LVDS305ZQER SN65LVDS306
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SN65LVDS305 SLLS744A 27-BIT SN65LVDS306 24-bit A115-A C101 SN65LVDS305 SN65LVDS305ZQER SN65LVDS306 | |
Direct-Rambus-RIMM
Abstract: ic marking B48 750 B36 Transistor NEC 12d G100 MC-4R128CPE6C IC MARKING A60 6043b label LOT CODE NEC
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MC-4R128CPE6C 128M-BYTE 64M-WORD 16-BIT) MC-4R128CPE6C PD488448) 600MHz, 711MHz 800MHz Direct-Rambus-RIMM ic marking B48 750 B36 Transistor NEC 12d G100 IC MARKING A60 6043b label LOT CODE NEC | |
MC-4R64FKE8S
Abstract: PD488588 PD488588FF
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MC-4R64FKE8S M01E0107 E0140N30 MC-4R64FKE8S PD488588 PD488588FF | |
Direct-Rambus-RIMM
Abstract: MC-4R128FKE6D PD488588 PD488588FF
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MC-4R128FKE6D 128M-BYTE 64M-WORD 16-BIT) MC-4R128FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Direct-Rambus-RIMM PD488588 PD488588FF | |
DDR2-400
Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
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256MB EBE25RC8AAFA EBE25RC8AAFA M01E0107 E0470E10 DDR2-400 DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E | |
DDR2-533
Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
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EBE10RD4ABFA EBE10RD4ABFA M01E0107 E0366E60 DDR2-533 EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400 | |
EBR25UC8ABFD-8C
Abstract: EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD
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256MB EBR25UC8ABFD 1066MHz/800MHz 925mm M01E0107 E0317E20 EBR25UC8ABFD-8C EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD | |
DDR2-533
Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
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EBE20RE4AAFA EBE20RE4AAFA M01E0107 E0440E20 DDR2-533 EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400 | |
EDE1104AASE
Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
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EDE1104AASE EDE1108AASE EDE1104AA EDE1108AA 68-ball M01E0107 E0404E10 EDE1104AASE EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE | |
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DDR2-400
Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
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EBE11ED8AEFA EBE11ED8AEFA M01E0107 E0587E10 DDR2-400 DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E | |
Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks |
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TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT JS851A-NO 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
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MC-4R128FKE8D 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8D PD488588) 600MHz, 711MHz 800MHz M01E0107 | |
Contextual Info: PRELIMINARY DATA SHEET 512MB 32-bit Direct Rambus DRAM RIMM Module MC-4R512FKK8K 128M words x 18 bits × 2 channels Description Features The 32-bit Direct Rambus RIMM module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications |
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512MB 32-bit MC-4R512FKK8K 800MHz 925mm M01E0107 E0254N10 | |
Contextual Info: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal |
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MC-4R64FKE8S-840 M01E0107 E0259N10 | |
DDR2-400
Abstract: DDR2-533 DDR2-667 EBE51ED8AGFA EBE51ED8AGFA-4A-E EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EDE5108AGSE-6E-E
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512MB EBE51ED8AGFA EBE51ED8AGFA M01E0107 E0783E20 DDR2-400 DDR2-533 DDR2-667 EBE51ED8AGFA-4A-E EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EDE5108AGSE-6E-E | |
143-PINContextual Info: DATA SHEET 256MB SDRAM Micro DIMM EBS25UC8APMA 32M words x 64 bits, 1 bank Description Features The EBS25UC8APMA is 32M words × 64 bits, 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module (Micro DIMM), mounted 8 pieces of 256M bits SDRAM sealed in µBGA package. This module |
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256MB EBS25UC8APMA EBS25UC8APMA 144-pin 18inch 100MHz/13ribed M01E0107 E0241E30 143-PIN | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct RambusTM DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking |
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MC-4R128FKE8S 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8S PD488588) 800MHz M01E0107 | |
RDRAM RAMBUSContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
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MC-4R256FKE6D 256M-BYTE 128M-WORD 16-BIT) MC-4R256FKE6D PD488588) 600MHz, 711MHz 800MHz RDRAM RAMBUS | |
Elpida MemoryContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D-840 Direct Rambus DRAM RIMMTM Module 512M-BYTE 256M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
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MC-4R512FKE6D-840 512M-BYTE 256M-WORD 16-BIT) MC-4R512FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Elpida Memory |