TEPN Search Results

Contextual Info: DRAW I MS MADE !N THIRD ¿N G LE P R O JE C TIO N THIS DRAWING IS UNPUBLISHED. COPY RIGHT 13 RELEASED SY AMP FOR LOC PUBLICATION INCORPORA T E D . ALL AF I N TEPN A T 1 ONAL R IG H T S R E SE R V E D . D IS T REVISION S 50 D E SC R IPT IO N REDRAWN PER 0710-0569-95

QA-2000

Abstract: TC-36B
Contextual Info: rEHEPATOPHbIM TETPOfl r C '3 6 B l E T R 'K reHepaTopHbm TeTpofl T C -36B npeflHa3Ha>HeH p j\9 \ ycuneHMfl moihhoctm b ycn/iM Tenax c p acnp eflen eH - T h e T C -36B tetrode is designed for pow er amplifi­ cation in distributed-gain am plifiers and single-sideband

Contextual Info: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible

Contextual Info: POS. M -n cn in & |lj + “ o NÛ -r ™ N x >' !x y x x x x x x x x x ^ x 'x F ¿8 RGW Xi @ X x X >; X X X X X X X X X X @ V X X K X X X X X X X X >\ X X X X AN ¿ S T E R /S K . , X' . , ' AN A S T E R IS K 'T1I Ä M A T E R IA L : - H O U S JM ü , T H E R M O P LA S T IC

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54100A-C Advance Information 4M x 1 CMOS Dynamic RAM Page Mode Operating Temperature - 40 to + 85°C N PACKAGE 300 M IL SOJ CA SE 82 2 -0 3 ^ S p .n The M C M 5 4 1 0 0 A -C is a 0.7 j C M O S h ig h -s p e e d d yn a m ic random a ccess

Contextual Info: B b ico K O M acT O T H M H H ig h -freq u e n c y n e H T o /i p e n to d e 7> K12C n p e flH a 3 HaqeH H anpH JK eH H H BH COKOH tia C T O T b l Ä a jib H e ft n p o B O Ä H O ö c b h 3 h . B b ic o K o q a c T O T H b ie K3IOTCH a w ith sh o rt c h a ra c te ris tic

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-

Contextual Info: MICRON TECHNOLOGY INC 3ÖE D blllSMI G0DS1Ö1 I B M R N rm rr l*V vw*1-* V 1, g i f t innViliMfrfr^n i 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES Four independent CAS controls, allowing individual manipulation to each of the four data Input/O utput

nec A2C

Abstract: kmxx nec vt 575
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / ¿ P D 4 2 1 1 6 5 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The î î PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).

Contextual Info: MICRON SEMICONDUCTOR INC b3E 1 • M IC R O N 2 MEG □RAM _ MODULE I V I V / iy blllSMT ÜDGÔlfiO 032 H M R N 2 MEG x X MT20D240 40 DRAM MODULE 40 DRAM FAST-PAGE-MODE MT20D240) lo w p o w e r, F EXTENDED Y T F M n F n R REFRESH F (MT20D240 L) V / FEATURES

1355065

Abstract: 108-18621
Contextual Info: 4 1 MATED WITH: PASSEND ZU: LOC AI 967402 REVISIONS DIST - P PROJEKT NR.: DESCRIPTION BESCHREIBUNG D1 92-52069 DATE REVISED PER ECO-11-005150 E REVISED PER PCN E-13-005564 DWN APVD 21MAR11 RK HMR 18APR2013 RD JG SECTION C-C Schnitt C-C -COUPLING-RING IN PRE-LOCKED POSITION

Contextual Info: Timing Chart 1 Read Cycle tRC RAS \ V lH — V lL - tfiA S tCSH tRSM CAS VlHV lL - tRAD tRAL Use Ia sr A ddress tCPN V lH - V.L- mi Row 3 : tCAH Col. « : IIIIÌÌIII/Ì m tOCH toes ÎWEZ * : mwwwwwwm tOEA i tRAC tAA t0 6 2 tOLZ I/O V oh V o l- H i-Z m

Contextual Info: AMP ' 4 7 1 —6 REV 2 —01 MOO 1 2 4 LOC . DIST &D 39 REVISIONS p F ZONE LTR m EASED A R.ev-ecKj H"S ktV ELM APPROVED B b Z j w» V V, OATE DESCRIPTION ^ -4 /Ray E REVISED £C'2.8 h-CM o u 6048\4 v *£te. 2.f?-£i t P PER '15 ¿"¿/-fi E C U A W CABLE \

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

bf37

Abstract: kvg crystal FILTER 41 bf
Contextual Info: KVG Q U A R TZ CRYSTAL TEC H NO LO G Y GIV1BH Standard Filter Cases A V E C T R O N IN T E R N A T IO N A L C O v O P A N Y tn ftj O 22,86*025 s GW 1EC 49 C0 208 in (VI ci *4 22,86*0,25 I* F > DIN ICC 49(00)208 Typ F01 ru 1 « IN £5*0.1 ' 2 * OUT 1 5 < 1 - IN

K140MA1

Abstract: K190KT2 K174YH7 K554CA2 k159ht1 hj3h 190KT2 transistor k513 K190KT1 K159
Contextual Info: HHfErPAIIbHbli NHKPOCXENbl INTEGRATED MICROCIRCUITS MHTETPAJlbHblE MklKPOCXEMbl IN TEG R A TED M ICRO CIRCU ITS M acTb Partii II AH AJIOrOBblE M HTETPAJlbHblE MklKPOCXEM bl IN TEGRATED ANALOG M ICRO CIRCUITS 3 ne«TpoHHan npoHbim neMHocTb C C C P - oamh mi xpynHeHuiHX b MMpe npoMJBOAHTeneü BbicoKoxanecTBeHHbix M3 AenMM jneKTpoHHoM tcxhm km , KoTopbie b HaCToMLijee sperm

Contextual Info: MICRON TECHNOLOGY INC » 14E D DRAM B fe.1115 4 i 0 0 0 0 0 4 ^ *1 B 1MEG x 1 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard x l pin-out, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply

Contextual Info: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES

uPD70F3123

Abstract: UPD76F BT600 upd70f3123gj uPD70F3123GJ-UEN ETB29 70F3123 PIN DIAGRAM OF 7 segment display LT 542 "lcd 2 8" KHN 10
Contextual Info: Preliminary User’s Manual V850E/CA1 TM ATOMIC 32-/16-bit Single-Chip Microcontroller Hardware µPD703123, µPD70F3123 Document No. U14913EE1V0UM00 Date Published October 2001  NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS