JPD42 Search Results

u31c

Abstract: ASG TRANSISTOR
Contextual Info: N E C ELECTRONICS INC 3ÖE 3> b4a?525 d ü b i ^ h 0 * n e c e PPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM N EC E lectronics Inc. Description Pin Configurations The /JPD424102 is a static-oolumn dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to

UPD4216402

Contextual Info: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt

Contextual Info: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic

Contextual Info: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.

Contextual Info: NEC pPD42280 NTSC and PAL Field Buffer NEC Electronics Inc. Description The /JPD42280 is a 262,224-word by 8 -bit dual-port field buffer fab ricated w ith a silicon-gate CMOS process. The device can execute synchronous and asynchro­ nous serial w rite and serial read opera tion a t a 33.3MHz clock frequency. In asynchronous mode, the de­

D4217400

Abstract: nec 4217400
Contextual Info: JPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /JPD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.

1000FA

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-421000FA64 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-421000FA64 is a 1,048,576 words by 64 bits dynamic RAM module on which 4 pieces of 16 M DRAM: /jPD4218165 are assembled.

CI 4001

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC D escription The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on w hich 18 pieces o f 16 M DRAM: /JPD4217400 are assembled.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.

SA9C

Contextual Info: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili­

Contextual Info: NEC ¡j PD424102 4,194,304 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations T h e /JPD424102 is a static-colum n dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

6865-A

Abstract: NEC PD42275 JPD42275
Contextual Info: SEC . pPD42275 Video RAM NEC Electronics Inc. D escription F eatures The /JPD42275 is a dual-port graphics buffer equipped with a random access port and a serial read port. The serial read port is connected to an internal 2048-bit data register through a 256 x 8 -bit serial read output

FR-H1

Contextual Info: JUH i fiPD42275 Video RAM NEC Electronics Inc. May 1992 Description Features The /jPD42275 is a dual-port graphics buffer equipped with a random access port and a serial read port. The serial read port is connected to an internal 2048-bit data register through a 256 x 8 -bit serial read output

Contextual Info: m e NEC Electronics Inc. Description The /JPD424900A/L and /iPD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or +3.3 V and a new refresh mode called “ self-refresh.”

Contextual Info: SEC fiPD424800 524,288 X 8-Bit Dynamic CMOS RAM NEC Electronics Inc. PRELIMINARY INFORMATION Description The / jPD424800 is afast-page dynamic RAM organized as 524,288 words by 8 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

Contextual Info: NEC ÿfPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The /JPD424190A/L and /j PD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single power supply. Optional features are pow er supply voltage + 5 V or

42s4260

Contextual Info: N E C ELECTRONICS INC blE D N EC NEC Electronics Inc. • b427525 0033037 053 « N E C E #iPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM 17 Description The /JPD424260A/L and /JPD42S4260A/L are fast-page dynam ic RAMs organized as 262,144 words by 16 bits

D4244

Contextual Info: fiP D 4 2 4 4 1 0 F IM I W 1,048,576 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. The /JPD424410 is a 1,048,576 by 4-bit dynam ic RAM designed with a w rite-per-bit option to o perate from a single + 5 -v o lt power supply. Advanced polycide tech­ nology m inim izes silicon area and provides high stor­

GX-70

Abstract: C80l ice power 200 asc IN6010
Contextual Info: SEC fiPD421000 1,048,576 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD421000 is a fast-p ag e dynam ic RAM organized as 1,048,576 words by 1 bit and designed to o perate from a s in g ie + 5 -v o lt pow er supply. Advanced polycide

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿ / P D 4 2 S 4 2 1 A , 4 2 4 2 1 A 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /JPD42S4210A, 424210A are 262 144 words by 16 bits dynamic CMOS RAMs with optional hyper page

MW-66

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 words by 32 bits dynam ic RAM m odule on which 8 pieces o f 16 M DRAM: /jPD4217400 are assembled.

D424402

Contextual Info: JIPD424402 1,048,576 x 4-Bit Dynamic CMOS RAM L i ÆJj V NEC Electronics Inc. Description Pin Configurations The /JPD424402 is a static-colum n dynam ic RAM organ­ ized as 1,048,576 by 4 bits and designed to o perate from a single + 5 -v o lt pow er supply. Advanced polycide