TEMPERA Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. UOC ALL RIGHTS RESERVED. DIST REVISIONS 22 AA LTR DESCRIPTION 30APR05 E C 0S 11 - 0 2 0 1 - 0 4 A HOUSING - LAM SF HIGH TEMPERATURE THERMOPLASTIC, U L94V -0.

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

K2545

Abstract: cx 2808 tlc2652 TLC2652A D3157
Contextual Info: TLC2652, TLC2652A Advanced LinCMOS1 PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS D3157, SEPTEMBER 1988 0008, JG, or P PACKAGE Extremely Low Offset Voltage . . 1 nV Max TOP VIEW Extremely Low Change in Offset Voltage with Temperature . . . 0.003nV/°CTyp

Contextual Info: SN54HC132, SN74HC132 QUADRUPLE POSITIVE-NAND GATES WITH SCHMITT-TRIGGER INPUTS SCLS034B - DECEMBER 1982 - REVISED JANUARY 1996 • • • • • Operation From Very Slow Input Transitions Temperature-Compensated Threshold Levels High Noise Immunity Same Pinouts as ’HCOO

texas instruments tip34

Abstract: texas instruments tip33 TIP33C
Contextual Info: TYPES TIP33, TIP33A, TIP33B. TIP33C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X O H m c< tj r FO R POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGN ED FOR COM PLEM ENTARY USE WITH TIP34, TIP34A, TIP34B, TIP34C • 80 W at 25° C Case Temperature

TL431I

Abstract: TL431M TL431MFK TL431AC TL431C TL431CDR 30PPM TL431AI L431c tl4311
Contextual Info: TL431C, TL431AC, TL431I, TL431AI, TL431M, TL431Y ADJUSTABLE PRECISION SHUNT REGULATORS SLVS005I - JULY 1978 - REVISED AUGUST 1998 D PACKAGE TOP VIEW • Equivalent Full-Range Temperature Coefficient. . . 30 ppm/°C • 0.2-ii Typical Output Impedance •

TMPZ84C011

Abstract: TMPZ84C015BF6 TMPZ84C015BF-6 TMPZ84C011B TMPZ84C011BF-6 TMPZ84C011BF TMPZ84C011BF6 TMPZ84C015BF TMPZ84C810AF-6 TRD-100
Contextual Info: 8-Bit Microprocessor & Peripheral LSI TLCS-85 Family NMOS X44 Type No. Min. Inst. Execu­ tion time (ms) Function Max Supply Current (mA) Frequency (MHz) No. of Pins TMP8085AP-2 Microprocessor 0.8 170 5 40 ♦TMP8085AHP-2 Microprocessor 0.8 135 5 40 Notes) Postfix P: Plastic standard DIP (DIP), * : Supply voltage: 4.5-5.5V; Supply voltage: 4.75-5.25V, Operating temperature: 0~70”C

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

2N5885

Abstract: 2N 5883 2n 5886
Contextual Info: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current

788712-1

Abstract: tyco usb
Contextual Info: 16.00 FRONT EDGE OF CONNECTOR 9.58 9.00 NOTE: 1. MATERIAL: HOUSING: THERMOPLASTIC HIGH TEMPERATURE, UL 9 4 V —0, COLOR: BLACK. CONTACT: PHOSPHOR BRONZE, TH IC KN ESS=0.25m m . SHELL: PHOSPHOR BRONZE, TH IC KN ESS=0.30m m . REAR SHELL: STAINLESS, TH IC KN ESS=0.30m m .

2N335

Contextual Info: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly

P channel 50A IGBT

Contextual Info: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

texas instruments tip32

Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Contextual Info: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature

2SK528

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC

2N3467

Abstract: 2m324
Contextual Info: TYPES « i r i 2N3467, 2N3468 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 0 5 7 6 , M A Y 1 9 6 8 - flE V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability. . . 10 Watts at 25°C Case Temperature

BU 450 bdx

Abstract: bux81
Contextual Info: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :

336d

Abstract: LM series voltage regulators ADJ 33-6L diode
Contextual Info: LM236-2.5, LM336-2.5 2.5-V INTEGRATED REFERENCE CIRCUITS -REVISED AUGUST 1991 D3289, NOVEMBER 1 D PACKAGE Low Temperature Coefficient TOP VIEW Wide Operating C u rre n t. . . 400 (¿A to 10 mA NC[ NC[ NC[ ANODE[ 0.2-Q Dynamic Impedance • ±1 % Tolerance Available

a14 Transistor

Contextual Info: TEXAS XNSTR QbE D | 011.1751 0075454 5 | SM61CD64, SMJ61CD64 65.536-W0RD BY 1-BIT STATIC RAMS Separate I/O J D PA C K A G E TOP VIEW AOC A1C A2C A3Q A4Q A5Q A6^ Military Temperature Range . . . -5 5 ° C to 125°C (M Suffix) • • Fast Static Operation

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

TMS320P17

Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Contextual Info: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C

2N1566

Contextual Info: TYPE 2N1566 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 8 , M A R C H 1 97 3 FOR G E N E R A L PURPOSE A M P L IF IE R APPLICATIO N S • V B R C E O • ■ - 6 0 V Mi n • hpE - . - 60 to 200 mechanical data •absolute maximum ratings at 2 5 °C free-air temperature (unless otherwise noted)