TELEFUNKEN RA 100 Search Results

IR5H

Contextual Info: VfSMAY _BAW27 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Low forw ard voltage drop • High forw ard current capability Applications High speed sw itch and general purpose use in com p u te ra n d industrial applications

L95M

Contextual Info: 1N5221 B.1 N5267B ▼ Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Low reverse current level • Vz-to le ra n c e ± 5% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25°C

temic 0675

Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Contextual Info: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23

Contextual Info: TZM5221 B.TZM5267B ▼ Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical w ith the devices 1N5221 B.1 N5267B • Low reverse current level • Vz-to le ra n c e ± 5%

Contextual Info: vS ü y BZX55B. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Low noise • Very high stability • Available w ith tig hte r tolerances • Vz-to le ra n c e ± 2%

Contextual Info: BAV17.BAV21 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Applications G e n e ra l p u rp o s e s Absolute Maximum Ratings Tj = 25°C P a ra m e te r T e s t C o n d itio n s P e a k re v e rs e v o lta g e T yp e S ym bol V alue U nit B A V 17

et1600

Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Contextual Info: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection

Contextual Info: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility

transistor t2a 82

Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:

4078B

Abstract: ic 4078
Contextual Info: Tem ic U 4078 B TELEFUNKEN Semiconductors Tone Ringer Interface with DC-to-DC Converter Description T h e to n e rin g er in terface w ith dc/dc co n v erter U 4078 B is an in te g ra te d circuit realized in b ip o lar technology, w hich allows high efficient pow er transfer.

Contextual Info: Te m ic BUF654 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le - s W itc h -O ff T ra n s is to r S W O T • H IG H S P E E D te c h n o lo g y • P la n a rp a ss iv a tio n • 100 k H z sw itc h in g rate

Contextual Info: Te m ic BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le -s W itc h -O ff T ra n s is to r S W O T • H IG H S P E E D te c h n o lo g y • P la n a rp a ss iv a tio n • 100 k H z sw itc h in g rate

EC806

Abstract: ec806s telefunken tubes la 12 LA1212
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel TELEFUNKEN UHF-Triode Vorläufige technische Daten • Tentative data Zu ve rlässigkeit R e lia bility D e r P -F a k to r g ib t d e n v o ra u ssic h tlic h e n R ö h re n ­

SMA BYG

Contextual Info: _BYG22 Vishay Telefunken ▼ Super Fast Silicon Mesa SMD Rectifier Features • C o n tro lle d a v a la n c h e c h a ra c te ris tic • G la s s p a s s iv a te d ju n c tio n • L o w re ve rs e c u rre n t • L o w fo rw a rd v o lta g e • S o ft re c o v e ry c h a ra c te ris tic

Contextual Info: vtS H Â Y ▼ _BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • L o w T u rn -o n V o lta g e • F a st S w itc h in g • PN J u n c tio n G u a rd R ing fo r T ra n s ie n t a n d ESD P ro te ctio n

Contextual Info: vüShâÿ ▼ LL4154 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 Applications 94 9371 E x tre m e fa s t s w itc h e s s Absolute Maximum Ratings Tj = 2 5 ° C P a ra m e te r

Contextual Info: _ BA479G.BA479S v tS H A Y ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d H F re s is ta n c e In a d ju s ta b le a tte n u a to rs

Contextual Info: LS4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s Absolute Maximum Ratings

CQ 734 G

Contextual Info: BA779.BA779S VtSHAY ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d a tte n u a to rs HF re s is ta n c e In a d ju s ta b le Absolute Maximum Ratings Tj = 2 5 ° C

transistor 13005D

Abstract: LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D
Contextual Info: Te m ic TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in te g ra te d C -E -fre e -w h e e l d io d e V ery low sw itch in g losses • H IG H S P E E D te c h n o lo g y V ery low d y n a m ic satu ratio n

Contextual Info: VfSMAY _LL4150 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • L o w fo rw a rd v o lta g e d ro p • H igh fo rw a rd c u rre n t c a p a b ility Applications H igh sp e e d s w itc h a n d g e n e ra l p u rp o s e use in c o m ­

BA979

Contextual Info: VÎ&NÂY BA979.BA979S ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d a tte n u a to rs HF re s is ta n c e In a d ju s ta b le Absolute Maximum Ratings Tj = 2 5 ° C

f 6267

Abstract: telefunken ra EF806S 6267 tube telefunken ra 200 telefunken ra 100 telefunken ra-100 telefunken ef ef806 kq 330
Contextual Info: Netzröhre für GW -Heizung indirekt geheizt Parallelspeisung TELEFUNKEN DC-AC-Heating indirectly heated connected in parallel o © N F -P e n to d e A F -P e n to d e Z u v e rlä ss ig k e it D e r P -F a k to r g ib t d e n v o ra u ssic h tlic h e n R ö h r e n ­

Contextual Info: S592T/S592TR/S592TRW Y Vishay Telefunken MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M O S M IC - M O S M o n o lith ic In te g ra te d C irc u it E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g .