TELEFUNKEN RA 100 Search Results
TELEFUNKEN RA 100 Datasheets Context Search
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tda4210
Abstract: telefunken hi-fi 12-pin stereo amplifier iflimiter
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IR5HContextual Info: VfSMAY _BAW27 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Low forw ard voltage drop • High forw ard current capability Applications High speed sw itch and general purpose use in com p u te ra n d industrial applications |
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BAW27 D-74025 01-Apr-99 IR5H | |
L95MContextual Info: 1N5221 B.1 N5267B ▼ Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Low reverse current level • Vz-to le ra n c e ± 5% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25°C |
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1N5221 N5267B D-74025 01-Apr-99 L95M | |
temic 0675
Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
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D-74025 temic 0675 MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244 | |
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Contextual Info: TZM5221 B.TZM5267B ▼ Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical w ith the devices 1N5221 B.1 N5267B • Low reverse current level • Vz-to le ra n c e ± 5% |
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TZM5221 TZM5267B 1N5221 N5267B 300K/W, D-74025 01-Apr-99 | |
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Contextual Info: vS ü y BZX55B. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Low noise • Very high stability • Available w ith tig hte r tolerances • Vz-to le ra n c e ± 2% |
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BZX55B. D-74025 01-Apr-99 | |
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Contextual Info: BAV17.BAV21 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Applications G e n e ra l p u rp o s e s Absolute Maximum Ratings Tj = 25°C P a ra m e te r T e s t C o n d itio n s P e a k re v e rs e v o lta g e T yp e S ym bol V alue U nit B A V 17 |
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BAV17. BAV21 BAV21 D-74025 -Apr-99 | |
GleichrichterContextual Info: TELEFUNKEN SA 100 U K W -Diode für M eßzw ecke Technisch e D aten 1. Allgem eine Daten B ra u c h b a r fü r G le ic h ric h te rz w e c k e b i» h e ra b zu W e lle n lä n g e n v o n c a . 10 cm . H e i z s p a n n u n g . 1,9 V |
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et1600
Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
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4N25/2< V1CT6H/62 KK27PH KK24P 3010PiG 3020P ET1600 Japanese Transistor TRANSISTOR P 3 80ng transistor N J | |
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Contextual Info: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility |
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D-74025 01-Apr-99 | |
transistor t2a 82
Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
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T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors | |
n e c 2705
Abstract: 772t U2705 U2705B telefunken Cross Reference
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T-77-2T D01DSG7 T-77-zf n e c 2705 772t U2705 U2705B telefunken Cross Reference | |
TSHA3400Contextual Info: TELEFUNKEN ELECTRO NIC 17E D • fi^EOO^b 0Q0flb70 ô ■IAL66 TS HA 3400 _ r - w - / 3 IT llU IP IM M iK electronic O m m * lectaotoges GaAlAs Infrared Emitter in ¿ 3 mm T-l) plastic case A pplications: High power ra d ia t io n source in near in fra re d range |
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0Q0flb70 IAL66 ip-10 00Dfib7E TSHA3400 | |
E80CF
Abstract: Telefunken tubes 7643 tube la 7643 TELEFUNKEN e vb-1139
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50/oo E80CF Telefunken tubes 7643 tube la 7643 TELEFUNKEN e vb-1139 | |
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Contextual Info: Te m ic BUF654 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le - s W itc h -O ff T ra n s is to r S W O T • H IG H S P E E D te c h n o lo g y • P la n a rp a ss iv a tio n • 100 k H z sw itc h in g rate |
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BUF654 | |
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Contextual Info: Te m ic BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le -s W itc h -O ff T ra n s is to r S W O T • H IG H S P E E D te c h n o lo g y • P la n a rp a ss iv a tio n • 100 k H z sw itc h in g rate |
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BUF620 | |
EC806
Abstract: ec806s telefunken tubes la 12 LA1212
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SMA BYGContextual Info: _BYG22 Vishay Telefunken ▼ Super Fast Silicon Mesa SMD Rectifier Features • C o n tro lle d a v a la n c h e c h a ra c te ris tic • G la s s p a s s iv a te d ju n c tio n • L o w re ve rs e c u rre n t • L o w fo rw a rd v o lta g e • S o ft re c o v e ry c h a ra c te ris tic |
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BYG22 D-74025 24-Jun-98 SMA BYG | |
TCDT1121
Abstract: K1150PG K1150P rs tube TCDT1120 vishay TCDT1121 et1100 tk19 vishay 43
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4N25G 4N25V 4N35GV 4N35V NY17-1 CNY64 CNY64A CNY64B CNY65 CNY65A TCDT1121 K1150PG K1150P rs tube TCDT1120 vishay TCDT1121 et1100 tk19 vishay 43 | |
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Contextual Info: vtS H Â Y ▼ _BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • L o w T u rn -o n V o lta g e • F a st S w itc h in g • PN J u n c tio n G u a rd R ing fo r T ra n s ie n t a n d ESD P ro te ctio n |
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BAT54/A/C/S D-74025 -Apr-99 | |
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Contextual Info: vüShâÿ ▼ LL4154 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 Applications 94 9371 E x tre m e fa s t s w itc h e s s Absolute Maximum Ratings Tj = 2 5 ° C P a ra m e te r |
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LL4154 D-74025 01-Apr-99 | |
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Contextual Info: _ BA479G.BA479S v tS H A Y ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d H F re s is ta n c e In a d ju s ta b le a tte n u a to rs |
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BA479G BA479S D-74025 01-Apr-99 | |
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Contextual Info: LS4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s Absolute Maximum Ratings |
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LS4154 D-74025 01-Apr-99 | |
ECC803S
Abstract: telefunken ra 200 telefunken tubes
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50/oo ECC803S telefunken ra 200 telefunken tubes | |