TELEFUNKEN 862 Search Results

Telefunken tv Circuit Diagram schematics

Abstract: Wavecom U2794B-AFS U2794B Telefunken 49" tv Circuit Diagram schematics applications of vlsi in antennas catv up converter SMD P1 UHF Phase Shifter wavecom 500
Contextual Info: RF ICs for Wireless Communications Data Book 1996 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

coil gold detector circuit diagram

Abstract: saw resonator r2632 B3530 Transmitter with SAW-based Oscillator ANT015 SAW101 T101-T104 Ceramic Capacitors T104 Siemens ofw real fm transmitter circuit diagram
Contextual Info: TELEFUNKEN Semiconductors ANT015 UHF Wireless Data Transceiver Issue: 04.95 ANT015 TELEFUNKEN Semiconductors Table of Contents Introduction .1

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

TFK 839

Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
Contextual Info: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen

EL 817 C108

Abstract: STR 6456 star micro-electronics ltda Remington 700 ak 957 pioneer audio ic AEG - AKTIENGESELLSCHAFT ic 9022 spa microelectronic ltda Telefunken Electronic 867 905 101 A
Contextual Info: Te m ic Sates Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Germany TEMIC Dansk d o AEG Dansk Aktieselskab Roskildevej 8-10 2620 Albertslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN microelectronic GmbH Erfurter Strasse 31 85386 Eching

TFK 7 segment displays

Abstract: TFK 609 7-segment display tfk "seven segment display" tfk tfk 648 TFK BPW 41 N smd code marking Ld50 tfk 605 TFK 7 segment d 350 28 tfk 727
Contextual Info: LEDs and Displays Data Book 1996 TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VARACTOR diode POINT color code table

Abstract: smd transistor w20 tunnel diode General Electric smd diode M2 circuit diagram of luminous metal detector IEC747-5 Telefunken diode color code photo thyristor tunnel diode GaAs germanium diode smd
Contextual Info: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20 Function

BC 148 TRANSISTOR PIN CONFIGURATION

Abstract: diagram for test ic 8873 BYW52 U2403B symbol of Bc 148 transistor telefunken stm transistor Bc 540 pin
Contextual Info: U2403B TELEFUNKEN Semiconductors Charge Timer Description The monolithic integrated bipolar circuit U2403B is a time controlled constant current charger. Selection of charge current versus timing is according to external components at pins 2, 3 and 4. For high current

D0G87

Contextual Info: TELEFUNKEN ELECTRONIC • m 17E I ■ AtSOMfa D0G87?t 2 HALlSS TXSK 0 .-Series i Crwtiw'&chnotogtes r - m - o .g r CW -Double Heterostructure Laser ’ Applications: • Optical distance meters • Optical gyroscopes ? • Fiber coupled transmission lines

TCPT1200

Abstract: Vishay Telefunken Phototransistor 74HCT14 CECC00802
Contextual Info: TCPT1200 Vishay Telefunken Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same optical axes. The operating wavelength is 950 nm.

Contextual Info: TCPT1200 Vishay Telefunken Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same optical axes. The operating wavelength is 950 nm.

BPV10

Contextual Info: BPV10 Vishay Telefunken Silicon PIN Photodiode Description 94 8390 BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features

"SMD Code" a8

Contextual Info: TCUT1200 Vishay Telefunken Subminiature Dual Channel Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light source and the detector are located faceto-face on the same optical axes. The operating wavelength is 950 nm. The detector

BPV10

Contextual Info: BPV10 Vishay Telefunken Silicon PIN Photodiode Description 94 8390 BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features

sk3503

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi^SDOTb 0006700 ^ ■ ALGG TXSK 350. _ T - H - l - O r ■¡nSLltFtUiMIKIlM e le ctro n ic Crea&vt T#chno*ogie* C W - Double Heterostructure Laser Applications: • Optical distance meters • Optical gyroscopes

dual Phototransistor mouse

Abstract: TCUT1200 74HCT14 CECC00802
Contextual Info: TCUT1200 Vishay Telefunken Subminiature Dual Channel Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light source and the detector are located faceto-face on the same optical axes. The operating wavelength is 950 nm. The detector

Contextual Info: BPV10 Vishay Telefunken Silicon PIN Photodiode Description 94 8390 BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features

TSML3710-GS08

Contextual Info: TSML3710 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage

Contextual Info: CNY74-2H/ CNY74-4H V I^ W Y Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead

BPV10NF

Contextual Info: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô^HOD^b 0 GQÔ7 Ô2 fi H A L 66 TXSK 1.-Series _T ^ t - o s r T f ILliiPm&îKiM electronic CreativeTechnotog*e& C W - Double Heterostructure Laser Applications: • Optical distance meters • Optical gyroscopes

8439

Abstract: BPV10NF
Contextual Info: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and

Contextual Info: Tem ic TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T -P A plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs X=950nm and

Contextual Info: Te m ic TELEFUNKEN Semiconductors Assembly Instructions General Optoelectronic semiconductor devices can be mounted in any position. Connection wires may be bent, provided the bend is not less than 1.5 mm from the bottom of the case. During bending, no forces must be transmitted from the