TELEFUNKEN 105 Search Results

telefunken ta 400 specification

Abstract: marking CBW
Contextual Info: VISHAY Vishay Telefunken T Quality Informations Vishay Telefunken’s Continuous Improvement Activities Vishay Telefunken Tools for Continuous Improvement • • Vishay Telefunken qualifies materials, processes and process changes • Vishay Telefunken uses Process FMEA Failure

Contextual Info: VISHAY Vishay Telefunken ▼ Quality Inform ation Vishay Telefunken’s Continuous Improve­ ment Activities • • Quality training for ALL personnel including production, development, marketing and sales departments • Vishay Telefunken qualifies materials, processes

byg20

Contextual Info: T e m ic BYG20 TELEFUNKEN Semiconductors Fast Silicon Mesa SMD Rectifier Features • • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching behaviour Wave and reflow solderable

Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications

Pertinax

Contextual Info: VISHAY _ Vishay Telefunken ▼ Assembly Instructions General Surface Mounted Devices S em iconductor devices can be m ounted in any position. The term inal length may be bent at a distance greater than 1.5 mm from the case provided no

4n35

Abstract: atk63 4n36 4n35 telefunken 4N35 circuits 4n37
Contextual Info: 4N35/ 4N36/ 4N37 VISHAY Vishay Telefunken T Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual Inline package. The elements are mounted on one leadframe using

lux meter chip

Contextual Info: VISHAY Vishay Telefunken ▼ IrDA Standard - Physical Layer Specification In SIR mode, the data is represented by optical pulses between 1.6 ps and 3/16 of the bit length of the RS232 data pulse in SIR mode. Pulselength reduction is also applied in the higher fre­

TELEFUNKEN* U 111 B

Abstract: tcss1100a Transmissive Optical Sensors TCZT8020
Contextual Info: VISHAY Vishay Telefunken T Selector Guide Optical Sensors Reflective Optical Sensors with Transistor Output Characteristics Dim. Fig- Package Part Number VCEO @ 1 mA CTR @ lF !c VcEsat If ar|d lc mA V > < E < E > 1.5 20 >32 < 0.3 20 0.1 > 0.3 > 1.5 20 >32

Contextual Info: T VISHAY Vishay Telefunken te c h n ic a l d r a w in g s a c c o r d i n o to D IN sp e c ific a t io n s Figure 102 ^ C a s e op en t e c h n ic a l d r a w ir t q s a c c o r d i n o t o D IM s p é c if ic a t io n s +t- Figure 105 96 12097 t e c h n ira l d r a w in g s

Contextual Info: T e m ic BUF650 Sem iconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

TELEFUNKEN EL 156

Contextual Info: T e m ic S822TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

l1158

Abstract: smd mos 704 w59 marking
Contextual Info: TS e miec omn d u ic t ocr s S595TRW MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- anc

rf remote automotive temic

Abstract: U3741BM
Contextual Info: S e m i c o n d u c t o r s UHF Remote Control Receiver Description The U3741BM is a multi-chip PLL receiver IC in an S020 package. The device is especially designed for the requirements of low-cost transmission systems with low data rates 1 to 10 kBaud in Manchester code and

Contextual Info: Temic BFP92A Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features • High power gain • Low noise figure

chn 924

Abstract: CHN 712 transistor chn 047 transistor chn 746 chn 832 transistor chn 848 CHN 709 chn 723 CHN 927 TL82
Contextual Info: T e m ic S886T/S886TR Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. ^ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 12 V supply voltage.

smd transistor marking A3

Abstract: A3 smd sot-143 telefunken ha 880 P 817 telefunken ha 750 m smd transistor 278 AC
Contextual Info: Temic S595T/S595TR S e m i c o n d u c t o r s MOSMIC for TV-Tüner Prestage with 5 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. £ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.

Contextual Info: TEMIC TCSS1100/2100 S e m i c o n d u c t o r s Transmissive Optical Sensor Description T his device has a com pact construction where the em itting-light sources and the detectors are located face to face o n the sam e optical axes. T he operating w avelength is 950 nm. The detector consists of a

marking 822

Abstract: transistor IC 1557 b Telefunken u 257
Contextual Info: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •

JTK19

Contextual Info: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

MARKING ra

Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
Contextual Info: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

gl 1117 ax

Abstract: BF994
Contextual Info: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes

Contextual Info: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR

K423

Abstract: CI 8426
Contextual Info: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo­ diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR

EQUIVALENT Cqy80NG

Abstract: K3023P equivalent EQUIVALENT CNY21N TCDT 1102 D long term stability optocoupler temic optocouplers CNY12N SIGNAL PATH designer TCDT1120 tcdt 1102 g
Contextual Info: Tem ic S e m i c o n d u c t o r s Optocouplers in Switching Power Supplies If design engineers w'ork with TEMIC optocouplers, they will find some terms and definitions in the data sheets which relate to VDE 0884. These will now be explained: The following chapters should give a full understanding