TECHNIQUE Search Results

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

flyback uc3843 application

Abstract: uc3843 inverter circuit IC uc3843 uc3843 discontinuous Unitrode DN flyback uc3843 UC3843 flyback application note unitrode uc3843 unitrode Applications Note uc3843 uc3843 12v to 5v
Contextual Info: DN-43 UNITRODE Design Note Simple Techniques to Generate a Negative Voltage Bias Supply from a Positive input Voltage by Bill Andreycak Developing a low power negative supply voltage from a positive input supply can be accomplished using som e very common PW M control ICs. Typical

Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

Contextual Info: TLC0820AC, TLC0820AI Advanced LinCMOS HIGH-SPEED 8-BIT ANALOG-TO-DIGITAL CONVERTERS USING MODIFIED FLASH TECHNIQUES SLAS064A – SEPTEMBER 1986 – REVISED JUNE 1994 D D D D D D D D Advanced LinCMOS Silicon-Gate Technology 8-Bit Resolution Differential Reference Inputs

Contextual Info: SN55LVDS32, SN65LVDS32, SN65LVDS3486, SN65LVDS9637 HIGH-SPEED DIFFERENTIAL LINE RECEIVERS SLLS262I – JULY 1997 – REVISED SEPTEMBER 2000 The intended application of these devices and signaling technique is both point-to-point and multidrop one driver and multiple receivers data

Contextual Info: KBP201G thru KBP207G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243

15514

Contextual Info: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

si2366

Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

14093

Abstract: 75431
Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

driver injectors

Abstract: high side gate driver GTO FAN7083
Contextual Info: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under

loop control TL431

Abstract: u116 Unitrode DN photo coupler application note 431 regulator
Contextual Info: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switch­ mode power supplies is probably one of the most com­ mon practices in the industry. Benefits of this method include low component cost, high voltage isolation and

SH2100

Abstract: SH21-5
Contextual Info: SH Series Precision Metal-Clad Shunts L3 ±2 L1 ±1.5 6.5ø 10 slot ø6.0 holes 60mm ±.5 30mm ±.2 40mm ±.5 ø6.5 holes L2 ±1.5 400mm ±10 Precision metal clad resistors designed in four-terminal technique, are distinguished by high load capacity as well

Contextual Info: SSA 274 SINGLE TIER 5mm 3 LEADED TRI-COLOUR CIRCUIT BOARD INDICATOR A protruding LED for through panel mounting.The 3 leaded 5mm package allows direct drive to each of the Red & Green chips to produce Red, Green or a mix of both. BOT’s unique baseplate technique