TE SC88 Search Results

Contextual Info: Transistors Switching 450V, 5A 2SK2713 • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e gu a ra n te e d at V 5) gss = +30V. Easily designed drive circuits.

Contextual Info: 2SC4997 / 2SC4998 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors I High-frequency Amplifier Transistor, RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings T a = 2 5 t 1 ) High ft. (fr—240MHz) P a ra m e te r •P a c ka g in g specifications and hre

2sc5274

Contextual Info: 2SC5274 Transistors High-Voltage Amplifier Transistor 150V, 50mA I 2SC5274 •F e a tu re s 1 ) High breakdown voltage. (Vceo= 150V) 2 ) Low collector output capacitance. (Typ.2pF at Vcs=12V) •A b s o lu te maximum ratings ( T a = 2 5 t ) P a ra m e te r

Contextual Info: Transistors Switching 600V, 4A 2SK2792 •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d

mosfet ftr 03

Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Contextual Info: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d

Contextual Info: 2S B 1 2 9 0 Transistors I 2S D 1 8 3 3 Power Transistor —80V, —7A 2SB1290 •F e a tu re s •A b s o lu te maximum ratings (Ta=25t2) 1) L o w VcE(sat). (T y p .— 0 .3 V a t Ic/ I b = — 4 / — 0 .4 A ) Param eter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)

Contextual Info: Transistors Digital transistors built-in resistors DTD143TK •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s re s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it 2 .9 ± 0 .2 w ith o u t c o n n e c tin g e x te rn a l in p u t

Contextual Info: FMC6A IMD1A Transistors I Digital Transistor Dual Digital Transistors for Power Management FMC6A •Features 1 ) DTA115E and DTC115E transistors are housed in an SMT package. •A bsolu te maximum ratings (Ta=25'C) Parameter Supply voltage •C irc u it schematic

Contextual Info: DTB114GK DTD144GK Transistors Digital transistors built-in resistors DTB114GK I •A bsolu te maximum ratings (Ta“ 2Sfc) •Features 1 ) The built-in bias resistors consist of thin-film resistors with complete Isolation to allow positive biasing of the Input, and

transistor marking B5

Contextual Info: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A UMG1N / U M H IN / UMH5N / FMG1A / IM H1A / IMH5A Transistors Digital Transistor Dual Digital Transistors for Inverter Driver UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A I •A bsolu te maximum ratings (Ta=25°C)

OTA114Y

Contextual Info: UMA8N / FMA8A UMG5N / FMG5A Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I U M A 8N / FMA8A •A bsolu te maximum ratings (Ta—2 5 t ) •Features 1 ) Two OTA114Y transistors are housed in a UMT or SMT package Symbol Limits

Contextual Info: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eature« 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta“ 25*C) Parameter •C irc u it schematic Symbol

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

Contextual Info: DTA115GUA / DTA115GKA DTC115GUA / DTC115GKA Transistors Digital transistors built-in resistors I DTA115GUA / DTA115GKA •Features •A bsolu te maximum ratings (Ta=25^C) 1 ) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification M Di ain sc te on na tin nc ue e/

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP0C301 XP1C301
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0C301 (XP1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) 0.425 Unit: mm For general amplification M Di ain sc te on na tin nc ue e/

2SA1738

Abstract: 2SC3757 XP04654 XP4654
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04654 (XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For high-speed switching M Di ain sc te on na tin nc ue e/

DTC323TU

Abstract: MARKING H03 DTC343TK DTC343TS DTC323TK DTC323TS T106 T146 94S-751-C343T two transistors
Contextual Info: DTC323TU / DTC323TK / DTC323TS DTC343TK / DTC343TS Transistors Digital transistors built-in resistors I DTC323TU / DTC323TK / DTC323TS •A bsolu te maximum ratings (Ta=25‘C ) •Features In addition to the features of regular digital transistors, 1 ) Low VcE(sat) makes these transistors ideal for m uting circuits.

2sd1915F

Abstract: XP01504 XP1504 2SD1915
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05

Contextual Info: D T B 1 22 JK Transistors D T D 1 22 JK Digital transistor built-in resistors DTB122JK I •A bsolu te maximum ratings (Ta=25^C) •Features 1 ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.