TDR00 Search Results

smd c8f

Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
Contextual Info: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm

Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

NEOHM CRG 0603 thick film resistor

Abstract: Coilcraft NEOHM CRG 0603 capacitor 33nj PD84001 GRM1885C1H270JA01 33 pf capacitor 22 pf capacitor GRM1885C1H3R3CZ01 PD54008L-E
Contextual Info: STEVAL-TDR003V1 Typical performance Part list Designator Manufacturer Size Value Comment Part code C1, C5, C16 Murata 0603 nc Capacitor C6 Murata 0603 1 uF Capacitor C1F Murata 0603 3.3 pF Capacitor GRM1885C1H3R3CZ01 C2, C3, C4, C7, C8, C9, C10 Murata 0603

M177

Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

NEOHM CRG 0603 thick film resistor

Abstract: GRM1885C1H3R3CZ01 a05t C2f SOT-89 smd c2f PD54008L-E PD84001 STEVAL-TDR00 C6f TRANSISTOR smd transistor code 621
Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

SD2933

Abstract: M177 STEVAL-TDR004V1 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

PD57002-E

Abstract: PD57018-E PD57060-E JESD97 STEVAL-TDR007V1 1030 mhz STEVAL-TDR00
Contextual Info: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical

PD57018-E

Abstract: PD57060-E JESD97 PD57002-E STEVAL-TDR007V1 STEVAL-TDR00 AB-2x57060-1030
Contextual Info: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical

STEVAL-TDR007V1

Abstract: PD57018 PD57002-E PD57018-E PD57060-E
Contextual Info: STEVAL-TDR007V1 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical

schematic

Abstract: STEVAL-TDR001
Contextual Info: Circuit schematic Circuit schematic Filter schematic STEVAL-TDR001V1

SD2943

Abstract: austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 STEVAL-TDR005V1
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

C82 diode

Abstract: tekelec diode bas32 501 CHB philips zener diode c18 philips zener diode c47 BAS32 sod80 d10/diode diode c82 DIODE C63
Contextual Info: Document reference: PCB reference: STEVAL-TDR007V1 Company: STMicroelectronics Index Quantity Reference C81 - C82 - C83 J1 R17 C7 - C34 - C42 - C58 C6 - C33 - C41 - C57 C5 - C32 - C40 - C56 - C78 - C79 C15 - C17 - C18 - C50 - C53 - C63 C38 - C46 - C67 - C71

M177

Abstract: SD2943 austerlitz JESD97 STEVAL-TDR005V1 power transistor transistors equivalents
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

2L TRANSISTOR

Abstract: 14981 STEVAL-TDR004V1 austerlitz M177 SD2933 Ni100 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

STEVAL-TDR007V1

Contextual Info: STEVAL-TDR007V1 Circuit schematic

smd code c9f

Abstract: H2 SOT-89 RF amplifier smd c7f C2f SOT-89 GRM1885C1H3R9CZ01 smd c8f H2 SOT-89 amplifier GRM1885C1H3R3CZ01 PD84001 smd c2f
Contextual Info: STEVAL-TDR006V1 2 stage RF power amp: PD84001 + PD84008L-E + LPF N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.4 A ■ Input power < 10 dBm

austerlitz

Abstract: SD2933 2L TRANSISTOR M177 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

"RF Power Amplifier"

Abstract: 2L TRANSISTOR Ni100 SD2932
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

GRM1885C1H3R9CZ01

Abstract: A1 AMP RF SOT89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E PD84001 SMD CODE vapc
Contextual Info: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm

schematic

Abstract: CIRCUIT SCHEMATIC
Contextual Info: Circuit schematic STEVAL-TDR003V1 Circuit schematic Circuit schematic Bias schematic Filter schematic STEVAL-TDR003V1 Input matching schematic Inter matching schematic Output matching schematic Circuit schematic

STEVAL-TDR004V1

Abstract: STEVAL-TDR00 DSA00363766 schematic
Contextual Info: STEVAL-TDR004V1 Schematic STEVAL-TDR004V1 Schematic

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion