TD 162 N 16 Search Results

P1000

Abstract: tt 162 n 1200 tt162n CR5200 tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 162 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 162 N, TD 162 N, DT 162 N

MKA4

Abstract: tt 162 n 14 tt 162 n 16 P1000 tt162
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 162 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 162 N, TD 162 N, DT 162 N

powerblock td 162

Contextual Info: EUPEC L IE D • 34D32T7 □□□1110 247 HUPEC T T 162 N , T D 162 N , D T 1 6 2 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspan nu ng repetitive peak forward off-state

CLK12

Contextual Info: 16 Electrical Specifications This chapter specifies the following electrical behavior of the 21153: • PCI electrical conformance • Absolute maximum ratings • dc specifications • ac timing specifications 16.1 PCI Electrical Specification Conformance

jtag timing

Abstract: CLK12
Contextual Info: 16 Electrical Specifications This chapter specifies th e following electrical behavior of th e 21150: • PCI electrical conformance • Absolute m axim um ratings • dc specifications • ac tim ing specifications 16.1 PCI Electrical Specification Conformance

TD1501

Abstract: TD B6 HK 95 N pt118 t510s byv 25-1 T188F KFC7 bz plug TT 80 N 1200
Contextual Info: Outlines c ath o d e c ath o d e E-Cu-lead 25 mm E-Cu lead 25 silicon tu be red E-Cu-lead 0 5 m m ' silicon lead yellow I anode , anode - - case B T 72 h I 80 F. T 102 F, T 120 F, T 86 N, T 130 N, T 160 N, T 210 N case E 2 T 130 N, T 160 N K K ; i A ' -T-M

EUPEC tt 162 n 14

Abstract: powerblock td 162 powerblock tt 93 powerblock TT 95 N 1200 tt 36 n powerblock EUPEC TT 162 N 12 EUPEC tt 93 n 14 EUPEC tt 93 n tt 25 n powerblock tt162
Contextual Info: L IE EUP EC □ □ □ 1 1 1 0 247 D I U PE C T T 162 N, T D 162 N, DT 162 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

20MHz Crystal Oscillator

Contextual Info: KS88C0316 MICROCONTROLLER 16 Electrical data Electrical Data OVERVIEW In this section, KS88C0316 electrical characteristics are presented in tables and graphs. The information is arranged in the following order: — Absolute maximum ratings — I/O capacitance

Contextual Info: 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology □ H ighspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

TIP162

Abstract: automotive ignition tip162 TIP160 TIP161 npn DARLINGTON 10A tip162 to-3p
Contextual Info: Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・10A rated continuous collector current APPLICATIONS ・For use in automotive ignition,switching and motor control applications

CY7B161

Abstract: CY7B162 A10C CY7B162-15DMB
Contextual Info: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power

Contextual Info: 16K x 4 Static RAM L 7 C 1 6 1 /1 62 Features Description_ □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static RAMs. The storage cells are organ­

smd fuse marking 20

Abstract: UL 248-14 12V SMD fuse 014 IEC 68-2-58
Contextual Info: OMF 125V Quick-acting Surface Mount Fuse - High Breaking Capacity UL 248-14 formerly 198G CSA C22.2 No 248.14 (formerly 59.2M) NEW Approvals: UL recognition CSA certification Surge tolerant version for telecom: see page 162 63mA-10A 63mA-10A File #E41599

thyristor t 250 n 1200

Abstract: thyristor tt 92 n 1200 EUPEC tt 104 EUPEC tt 95 n thyristor tt 61 N 1200 thyristor tt 250 n 16 EUPEC TT 60 f EUPEC tt 106 n 16 EUPEC tt 142 n 16 thyristor tt 142 n
Contextual Info: Phase control thyristor modules Type Itrmsm V drm Itsm EUPEC b lE 3403217 » / i 2dt Itavm^ c VfTO fT di/dt)cr ÜÜQ133Í3 *q (dv/dt)cr ty p . DIN f 80 °el IEC 747-6 s in . R th J C 315 • U P E C R th C K W j m ax O utline V rrm V dsm = V q rm V rsm =

Contextual Info: n. , . . . Phase control thyristor modules Type V drm V rrm It r m s m Itsm EUPEC / i 2dt blE ]> • Itavm^ c VfTO 3403217 QGOlSSb 315 ■ U P E C fT di/dt)cr t„i = *q (dv/dt)cr R th J C V dsm = V d r m 10 ms, 10 ms, 180 °el tvi V rsm = V r r m + 100 V

thyristor t 250 n 1200

Abstract: thyristor tt 250 n 16 EUPEC tt 162 n 16 TT75N EUPEC tt 250 n EUPEC tt 95 n EUPEC TT 60 f EUPEC TT 92 EUPEC tt 142 n 16 tt 162 n 1200
Contextual Info: Phase control thyristor modules Type Itrmsm V drm Itsm EUPEC b lE 3403217 » / i 2dt Itavm^ c VfTO fT di/dt)cr ÜÜQ133Í3 *q (dv/dt)cr ty p . DIN f 80 °el IEC 747-6 s in . R th J C 315 • U P E C R th C K W j m ax O utline V rrm V dsm = V q rm V rsm =

EUPEC tt 162 n 16

Abstract: thyristor tt 142 n EUPEC tt 95 n EUPEC tt 250 n EUPEC tt 104 thyristor TT 95 N 1200 EUPEC tt 142 n 16 thyristor tt 162 n thyristor tt 61 N 1200 thyristor tt 95
Contextual Info: Phase control thyristor modules eupec Type / ¡2dt Itavm ^ c V TO> It (di/dt cr (dv/dt)cr Rtwc tvj = tv, = tv, max tvj max DIN typ. IEC 747-6 DIN IEC 747-6 180°el sin. V mQ A/|liS us V /jlS V drm V It r m s m Itsm MTE D 34 G 32 T 7 00 D 0115 T 31 m • UPZCf

t 250 n 1200

Abstract: thyristor TT 430 N thyristor TD 45 N 1200 thyristor TT 45 N 1200
Contextual Info: Phase control thyristor modules It r m s m V drm It s m / i2dt It avm ^ c V TO It (d i/d t)cr (d v /d t)cr RthJC RthCK tvj max °c/w °c V rrm V dsm = V DRM 100 V v rs m = V r r m + A V 10 ms, 10 ms, tv) = tv j max 180 °el sin. tvj = tv j max tv j max tv j max

display 4x16

Abstract: 4X16 lcd stm8l152 stpm10 4X16 lcd display lcd 4x16 UFQFPN48 iec 61036 LCD 8x40 EN62056-31
Contextual Info: E-meter single-phase combo solution STMicroelectronics Features accurate energy measurement and efficient data processing www.st.com/metering STM8L152/162 + STPM10: Basis of modular plug-and-measure singlephase electricity meter solution The STM8L152/162 and STPM10 chips from STMicroelectronics are designed to form the basis of a cost-effective

Panjit p6smb

Abstract: P6SMB10 P6SMB10A P6SMB11 P6SMB11A
Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 214 Volts PEAK PULSE POWER 600 Watts SMB/DO-214AA Unit: inch mm FEATURES .083(2.11) .185(4.70) .160(4.06) .083(2.13) .096(2.44) .012(.305) .006(.152) MECHANICAL DATA • • • • •

powerblock tt 162

Abstract: tt 92 powerblock powerblock tt 60 N thyristor tt 250 powerblock TD 95 N 400 thyristor tt 250 n 16 tt 251 n powerblock thyristor tt 330 powerblock TT 170 N powerblock TD 95 N 08
Contextual Info: Click on outline no. Phase Control Thyristor Modules Type VDRM ITRMSM ITSM ∫i2dt ITAVM/Tc V TO rT (di/dt)cr tq (dv/dt)cr RthJC RthCK Tvj max outline VRRM V A A A²s A/°C V mΩ A/µs µs V/µs °C/W °C/W °C VDSM=VDRM 10 ms, 10 ms, 180° el DIN typ. DIN IEC

thyristor TT 46 N

Abstract: thyristor tt 66 n 16 thyristor tt 121 thyristor TT 95 N 1200 thyristor TT 36 N thyristor tt 500 n 16 TT105N TT 56 N 1200 thyristor tt 56 n 14 TT 93 N 08
Contextual Info: Phase Control Thyristor Modules T ype V V V dsm V It r m drm V rrm = V rsm sm It s m Jpdt llA V M /tc V T O fT (di/dt) cr tq A A 2S A /° C V m ß A /|J S MS V /|js DIN IEC 747-6 A 10 drm m s, ^vj max = V rrm+100V 10 m s, ^vj max 180° el s in tvi = Vi =

thyristor TT 46 N

Abstract: TT 105 N 12 thyristor tt 162 n 12 thyristor TT 46 N 12 TT 46 N 800 thyristor TT 430 N 22 tt 104 n 12 thyristor tt 18 f 1000 thyristor TT 36 N thyristor tt 500 n 16
Contextual Info: Phase Control Thyristor Modules T ype V drm V rrm V Itrmsm A V dsm = V drm V rsm = V rrm+100V Itsm A 1 0 ms, Jpdt A zs 1 0 ms, ^vj max tyj max X103 350 0,61 ItAVM^c A /°C 180° el sin V TO V rT (d i/d t)cr tq (d v /d t)cr m fì MS typ. V/|JS DIN IEC 747-6

thyristor TT 46 N 1200

Abstract: thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 TD25N TT 93 N 08 thyristor TT 46 N 12 TT 46 N 12 thyristor TD 25 N PHASE CONTROL THYRISTOR MODULE TT 56 N
Contextual Info: Phase control thyristor modules Type Itrmsm V oR M I tsm i2dt / IfA V M ^C V TO (di/dt)ci tq (dv/dt)CF typ D IN 180 °el IEC 747-6 sin. V /( iS °c/w “C/W °c RlhJC R|hCK tv) max V rrm Vdsm = Vdrm V rsm = V r r M f100 V V Baseplate = A 10 ms, 10 ms, 180 °el