7B161 Search Results

Contextual Info: 7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs

EL36

Contextual Info: 7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power

CY7B161

Contextual Info: 7B161 CY7B162 A? I CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns Iaa • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power

CY7B161

Abstract: CY7B162 A10C CY7B162-15DMB
Contextual Info: 7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power

Contextual Info: 7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he 7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga­ nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­ tive LO W chip en ab les Cl'-i, CF-2 and

CY7B161-12PC

Abstract: b1615 B1616
Contextual Info: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The 7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen

C461B

Abstract: D1162 B11B6
Contextual Info: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 1212111 21345164789AB1C9DABE1F112111 1 1!31"1 21F3FE1111 F1!"#8$1 2 12A#1C$$%&1%' % 1D%*%1

851 a12 b1a

Abstract: 2D 8c
Contextual Info: 11 111 91". 1B141". 11 17 11C$*1 "313 *19881"1#174  12+1 $1+ %&1 <-80-81/21'- 12D8BC%9*B1 111111111111111111 1 111111111234567898AB1848A1 11111111111111111111111111111111111 CDEFD1 1 1 121211 1

61a17

Abstract: E11AB BFE 81A
Contextual Info: 123456789 1 2ABBCD91BCEFE9ECBE1 9 1 92DBB9 1 BB9BCAE9 716351B7B7978916789ABC91871787BA81 977E1 81 8A1 D !1 "71 981 BAE799ABF1 71 6351 91 79871 A1 #B81 1 7B$AB"8E71 977E1D !1$7%B791A1EA919789&71 7"#771 81

J61-10

Contextual Info: 7B161 CY7B162 CYPRESS SEMICONDUCTOR 16,384 x 4 Static RAM Separate I/O Features Functional Description • T h e 7B161 and C Y 7BI62 are high-per­ form ance BiCM OS static RAM s orga­ nized as 16,384 by 4 bits with separate I/O . T hese R A M s are developed by A spen