TCH725D Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - GldB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz

2sc2704

Abstract: 2SA1144 AC46C Toshiba 2sC2704
Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E T E / O P T O 5bC 07586 J J — 0~J 2SC2704 SILICON NPN EPITA X IA L TYPE PCT PROCESS) AUDIO FREQUENCY A M P L I F I E R DE I TCH7250 DQD7Sflti 0 f Unit in mm APPLICATIONS. 7 .9 M A X .

MG50G1BL3

Abstract: MG50G1BL3 toshiba MG50G6EL1 MG50G2CL3 MG50G2cl3 toshiba MG50G1JL1 MG50G2DL1 DT-33-35 toshiba MG50G6EL1 toshiba diode 3D
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ¿Tosìuht TO DISCRETE/OPTO D E | i CH7E5D 0Dlt>a30 t> | 90D 16230 SEMICONDUCTOR M M H M M TECHNICAL DATA G G G G G 5 5 5 5 5 G G G G G 1 1 2 2 6 B J C D E L L L L L DT-33&#39;35' 3 1 3 1 1 Unit In cm 3 Bo- CO - 1-3 M

Contextual Info: TOSHIBA -CDISCRETE/0PT039097250 TOSHIBA ¿Toshih =!□ DISCRETE/OPTO DE I TDTTSSD D O l ^ S O 90D 16320 D T - 3 3 -3 S SEMICONDUCTOR MG 2 5 N 2 C K 1 TECHNICAL DATA MG2 - 5 N6 E K 1 « o « o cdZJH-o«? CM Z m 1—4 e> se CO w vO » m CN o s G T 1 A2A TOSHIBA CORPORATION

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 32 dBm at f = 15 G H z • High gain - G idB = 7 dB at f = 15 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)