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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - GldB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package |
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tim5964-8a2-11d1btch725dqq22500 |