TCE 1994 Search Results

HM65W8512

Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
Contextual Info: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.

20-FFH

Abstract: 809A1 811A 811AX MB98A808A3
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30335-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A808Ax-/809Ax-/810Ax-/811Ax-20 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 256 K/512 K/1 M/2 M-BYTE • DESCRIPTION The Fujitsu MB98A808Ax, MB98A809Ax, MB98A810Ax and MB98A811Ax are Flash electrically erasable and

Contextual Info: cP February 1994 Edition 2.0 f - 'f I l f ' T ' f ' I I r U l l I b U D ATASH EE T: M B 9 8 A 9 0 8 2 X /9 0 9 2 x / 9 1 0 2 x / 9 1 1 2 x -2 0 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K / 5 1 2 K / 1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 |xs or 1 ms • Data Retention >10 years

Contextual Info: M 27C128 ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available

DS11021

Abstract: tce 1994
Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low-Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance — 200ns access time available at 3.0V • CMOS Technology for low power consumption — 12mA Active current at 3.0V

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

tce 1994

Contextual Info: & 27C512A Microchip _512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —70ns access time available • CMOS Technology for low power consumption —25mA Active current — 30|iA Standby current • Factory programming available

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X8 Low Voltage CMOS EPROM PIN CONFIGURATIONS FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

Contextual Info: 27LV64 M ic r o c h ip 64K 8K x 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance —200 ns access time available at 3.0V • CMOS Technology for low power consumption — 8 mA active current at 3.0V

I2C for TD6381

Abstract: TCE10
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 ADVANCE INFORMATION D.S. 3931 1.5 SP5654 2.7GHz 3–WIRE BUS CONTROLLED SYNTHESISER The SP5654 is a single chip frequency synthesiser designed for satellite TV tuning systems. It is a programming

CP1202

Contextual Info: 27HC256 M ic ro c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS • High speed performance — 55ns access time available 256K bit (electrically) Programmable Read Only Memory. CMOS technology for low power consumption

9102X

Abstract: PCMCIA SRAM Memory Card 512k 9112X fujitsu CARD, Static Memory, Battery Backup
Contextual Info: February 1994 Edition 2.0 FUJITSU DATA SHEET MB98A9082x/ 9092x / 9102x/ 9112x-20 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K /5 1 2 K /1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access Memory SRAM cards capable of storing and retrieving large amounts of data. The

Contextual Info: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years

Contextual Info: March 1994 Edition 1.0 FUJITSU DATA SHEET MB98A 8113X-/8 123x- / 8 1 33x- / 8 143x-20 FLASH MEMORY CARD FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2M / 4M / 8M / 1 6M-BYTE The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and programmable Flash memory cards capable of storing

DS11021

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

CY27H512-25JC

Abstract: CY27H512 CY27H512-25ZC 27H512-25 27H512-30 H5121 H5128
Contextual Info: 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

27c64 uv eprom

Abstract: 27C64 8k EPROM
Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current —100 jiA Standby current • Factory programming available

Contextual Info: & 27LV256 Microchip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance —200ns access time available at 3.0V • CMOS Technology tor low power consumption —8mA Active current at 3.0V

H-010

Abstract: 27H010 CY27H010 h0106 H0108 38-00171-D
Contextual Info: fax id: 3023 1CY 27H0 10 CY27H010 128K x 8 High-Speed CMOS EPROM Features try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

Hitachi DSA002750

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

MO-142BA

Abstract: dl 750 Hitachi DSA00171
Contextual Info: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-314F Z Rev. 6.0 Apr. 30, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high

H5128

Abstract: CY27H512
Contextual Info: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns access time available • CMOS Technology for low power consumption bit (electrically) Programmable Read Only Memory. The