TCE 1994 Search Results

SK3239

Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
Contextual Info: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous

SK3440

Abstract: SK3261 SK3265 SK3275 SK3274 SK3260 SK3293 SK3297 SK3441 sk3299
Contextual Info: TMftttSON/ D I S T R I B U T O R E 3 B IPO LAR TRANSISTORS SflE D • ^ 0 5 ^ 8 7 3 0 0 0 4 3 1 ^ T 34 ■ TCSK com . Maximum Ratings Bieakdown Voltages Device Polarity & Material TCE Type Application 'complementary device type Device Power Dissipata Collector

4C40H

Abstract: PCMCIA Flash Memory Card 512K a1a17 20H-1T Fujitsu MBM28F010
Contextual Info: March 1994 Edition 2.0 FUJITSU DATA SHEET MB98A8601/8602-17 FLASH MEMORY CARD 256K/512K-BYTE FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD The Fujitsu MB98A8601 and MB98A8602 are Flash electrically erasable and programmable Flash memory cards capable of storing and retrieving large

"0.4mm" bga "ball collapse" height

Abstract: cga 624 ibm semi reflow temperature bga
Contextual Info: A High Performance, Low Stress, Laminate Ball Grid Array Flip Chip Carrier D. J. Alcoe, T. E. Kindl, J. S. Kresge, J. P. Libous, C. L. Tytran-Palomaki, R. J. Stutzman IBM Corporation Endicott, New York Biography Dr. David J. Alcoe joined IBM in 1982 and is the

HM65W8512

Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
Contextual Info: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.

HN58C257R-20

Abstract: HN58C257T-20
Contextual Info: ADE-203-124F Z HN58C257 Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM Rev. 6.0 Dec. 5, 1994 The Hitachi HN58C257 is a electrically erasable and programmable ROM organized as 32768-word × 8-bit. It realizes high speed, low power

810B1

Abstract: 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30336-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809Bx-/810Bx-/811Bx-/812Bx-25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and

20-FFH

Abstract: 809A1 811A 811AX MB98A808A3
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30335-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A808Ax-/809Ax-/810Ax-/811Ax-20 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 256 K/512 K/1 M/2 M-BYTE • DESCRIPTION The Fujitsu MB98A808Ax, MB98A809Ax, MB98A810Ax and MB98A811Ax are Flash electrically erasable and

Contextual Info: cP February 1994 Edition 2.0 f - 'f I l f ' T ' f ' I I r U l l I b U D ATASH EE T: M B 9 8 A 9 0 8 2 X /9 0 9 2 x / 9 1 0 2 x / 9 1 1 2 x -2 0 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K / 5 1 2 K / 1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access

tce 1994

Abstract: L0523 28C16A
Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • High Endurance-Minimum 104 Erase/Write Cycles

tce 1994

Abstract: 28C16A MC520
Contextual Info: M 28C 16A ic r o c h ip 16K 2K x 8 CMOS EEPROM BLO CK DIAGRAM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 jis or 1 ms • Data Retention >10 years

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 |xs or 1 ms • Data Retention >10 years

Silver copper Palladium braze

Abstract: ROLLER
Contextual Info: HIGH TEMPERATURE ALUMINUM NITRIDE PACKAGING Mr. Tom O. Martin CTS Corporation 905 N. West Blvd. Elkhart, IN 46514 Phone: 219 293-7511 Fax: (219) 293-6146 Mr. Terry R. Bloom CTS Corporation 905 N. West Blvd. Elkhart, IN 46514 Phone: (219) 293-7511 Fax: (219) 293-6146

Contextual Info: M 27C128 ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available

27C128

Contextual Info: M ic r o c h ip 27C128 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access lime available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 ADVANCE INFORMATION D.S. 3931 1.5 SP5654 2.7GHz 3–WIRE BUS CONTROLLED SYNTHESISER The SP5654 is a single chip frequency synthesiser designed for satellite TV tuning systems. It is a programming

2,7GHz PRESCALER

Abstract: TD6380 SP5654 SP5655 1N1312
Contextual Info: FEBRUARY 1994 ADVANCE INFORMATION D.S. 3931 1.5 SP5654 2.7GHz 3–WIRE BUS CONTROLLED SYNTHESISER The SP5654 is a single chip frequency synthesiser designed for satellite TV tuning systems. It is a programming variant of the SP5655 allowing the design of one tuner with

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

tce 1994

Contextual Info: & 27C512A Microchip _512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —70ns access time available • CMOS Technology for low power consumption —25mA Active current — 30|iA Standby current • Factory programming available

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X8 Low Voltage CMOS EPROM PIN CONFIGURATIONS FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

Contextual Info: 27LV64 M ic r o c h ip 64K 8K x 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance —200 ns access time available at 3.0V • CMOS Technology for low power consumption — 8 mA active current at 3.0V

I2C for TD6381

Abstract: TCE10
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 ADVANCE INFORMATION D.S. 3931 1.5 SP5654 2.7GHz 3–WIRE BUS CONTROLLED SYNTHESISER The SP5654 is a single chip frequency synthesiser designed for satellite TV tuning systems. It is a programming

80486 microprocessor pin out diagram

Abstract: HN27C4000 80486 microprocessor block diagram and pin diagram pin out of 80386 microprocessor HN27C4096 Hitachi DSA00382 HN27C4096 "pin compatible"
Contextual Info: ADE-203-311A Z HN27C4000G Series 524288-Word x 8-Bit/262144-Word × 16-Bit CMOS UV Erasable and Programmable ROM Rev. 1 Nov. 10, 1994 The Hitachi HN27C4000 is a 4-Mbit UV erasable and electrically programmable ROM that is organized either as 524288-word × 8 bit or as

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 ADVANCE INFORMATION D.S. 3931 1.5 SP5654 2.7GHz 3–WIRE BUS CONTROLLED SYNTHESISER The SP5654 is a single chip frequency synthesiser designed for satellite TV tuning systems. It is a programming