TCA 1024 Search Results

Contextual Info: IBM11S1320LN IBM11S1320LL 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcA C CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tR C Cycle Time 110ns 130ns

Contextual Info: KM48V514B/B L/BLL CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCA C tn c tH PC KM48V514B/BL/BLL-6 60ns 17ns 110ns 24ns KM48V514B/BL/BLL-7 70ns 20ns 130ns 29ns KM48V514B/BL/BLL-8

Contextual Info: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung

tsop 338 IR

Abstract: L7BL 8AGD km49c512bj
Contextual Info: KM49C512B/BL/BLL CMOS DRAM 5 1 2 K x 9 Bit CM OS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tCA C tR C 60ns 15ns 110ns K M 49C 5 1 2 B /B L /B L L -7 70ns 20ns 130ns KM 49C 512B /B L7B LL-8 ' 80ns 20ns 150ns

Contextual Info: IBM11S1325L 1 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 I rac RAS Access Tim e 60ns 70 ns tcA G CAS Access Tim e 15ns 20 ns Ua A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e 104ns 124ns

Contextual Info: KM48C514B/BL/BLL CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 8 C 5 1 4 B /B L /B L L is a C M O S high • Performance range: tRAC tCA C tR C tH PC KM48C514B/BL/BLL-5 50ns 17ns 90ns

Contextual Info: tm TE CH Preliminary T2316167A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 3.3V ± 0.3V power supply. • All device pins are LVTTL- compatible. • 1K-cycle refresh in 16ms.

Contextual Info: tm TE CH Preliminary T2316167A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 3.3V ± 0.3V power supply. • All device pins are LVTTL- compatible. • 2K-cycle refresh in 32ms.

PM7351

Abstract: PM7328 PM7329 PM7350 432PIN
Contextual Info: Release PM7328 S/UNI-ATLAS-1K800 ATM Layer Solution FEATURES • Monolithic single chip device which handles bi-directional ATM Layer functions including VPI/VCI address translation, cell appending, policing ingress only , cell counting and OAM requirements for 1024 VCs (virtual

hef4750

Abstract: TCA Phase Control IC hef4750v hef4751 TCA 700 y
Contextual Info: HEF4750V LSI FREQUENCY SYNTHESIZER The HEF4750V frequency synthesizer is one o f a pair o f LOCMOS devices, p 'iin a rily intended fo r use in high-performance frequency synthesizers, e.g. in all communication, instrum entation, television and broadcast applications. A com bination o f analogue and digital techniques results in an integrated

HEF4750V

Contextual Info: HEF4750V LSI FREQUENCY SYNTHESIZER The HEF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination of analogue and digital techniques results in an integrated

TCA 700 y

Abstract: HEF4750V HEF4751V TCA 700 v HEF4751 TCA 700
Contextual Info: HEF4750V LSI FREQUENCY SYNTHESIZER The HEF4750V frequency synthesizer is one o f a pair o f LOCMOS devices, prim arily intended fo r use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A com bination o f analogue and digital techniques results in an integrated

GM71V18163C

Contextual Info: GM71V18163C GM71VS18163CL LG S em icoo C o.,Ltd. # 1,048,576 W O R D S x 16 B IT CM OS D Y N A M IC RA M Description The Features G M 71V S 18163C /CL is the new generation dynam ic R A M organized 1,048,576 x 16 bit. G M 71V (S)18163C /CL has realized higher density, higher perform ance and various

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

HEF4751V

Abstract: HEF4750V HEF4750VD
Contextual Info: HEF4750V LSI FREQUENCY SYNTHESIZER The H EF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination of analogue and digital techniques results in an integrated

HEF4751V

Abstract: hef4751
Contextual Info: HEF4750V LSI FREQUENCY SYNTHESIZER The H EF4750V frequency synthesizer is one o f a pair of LO CM O S devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination o f analogue and digital techniques results in an integrated

HEF4750VDF

Abstract: HEF4751V
Contextual Info: HEF4750V Signetics Frequency Synthesizer Product Specification Linear Products DESCRIPTION The HEF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-perfor­ mance frequency synthesizers; e.g., in all communication, instrumentation, tele­

TCA 720

Contextual Info: * GMM7321000CS/SG-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W ORDS x 32 BIT CMOS DYNAMIC RAM MODULI- Features The GM M 7321000CS/SG is an 1M x 32 bits Dynamic RAM MODULIwhich is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pm SOJ package on single sides the

MSP50C30

Abstract: MSP50C34 bc 338-25 equivalent SPSU012 PSA B21 TSP50C30
Contextual Info: MSP50C30 MixedĆSignal Processor User’s Guide 2000 Mixed-Signal Products SPSU012A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

108F00

Abstract: tca 335 A MSP50C30 psa 200 53 TAM bra 94 SPSU012 TSP50C30 SPSS021
Contextual Info: MSP50C30 Mixed-Signal Processor User’s Guide SPSU012 NOVEMBER 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

T2316162A

Abstract: T2316162
Contextual Info: tm TE CH T2316162A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 5V ± 10% power supply. • All device pins are TTL- compatible. • 1K-cycle refresh in 16ms.

Contextual Info: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.

TCA 120

Abstract: M7810
Contextual Info: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 71C 4400C J SO J • Fast Page M ode Capability • Single Pow er Supply

TAC 2J

Contextual Info: GMM7361000BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 7361000BS/SG is a 1M x 36 bits Dynamic RAM MODULI: which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x lbit DRAMs