TC514256B Search Results

TC514256

Abstract: TCS14256 TC514256B SOJ26-P-300 ZIP20-P-400
Contextual Info: PRELIMINARY 262 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514256BPL/BJL/BZL/BFTL is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BPL/BJL/BZL/BFTL utilizes TOSHIBA’S CMOS Silicon gate process technology as

Contextual Info: 262,144 W O R D Sx9 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM92500BS is a 262,144 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514256BJ and lpcs of TC51256T on the printed circuit board. The THM92500BS is optimized for application to the systems which are required high density and large capacity such as main memory of

TC514256

Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
Contextual Info: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC514256

Abstract: tc514256ap TC514256P-10 BTR-60 514258 AZ110 TC514258 TC514258P-10 MT4C4260-8 AZ-110
Contextual Info: -216 I M CMOS I /iffirSA’ lffl m r, ü & '<; TRAC max (ns) TRCY min (ns) D y n a r r i c X i ' + > TCAl) min (ns) TAH min (ns) ?" n RAM ie (ns) TWCY min (ns) T’ DH ! TRWC ¡nin ! min (ns) i (ns) TP (2 6 2 1 4 4 ft V D D or V C C (V) X 4) 2 0 P I N Â.

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100