TC5117 Search Results

TC5117445CSJ

Contextual Info: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

BC6MA

Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Contextual Info: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator

schottky CST

Abstract: h28p CST50 tc5117800cft
Contextual Info: TOSHIBA TC5117800CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5117800CJ/CFT/CST is a fast page dynamic RAM organized as 2,097,152 words by 8 bits. The

TC5118160

Abstract: c51v tc5118180
Contextual Info: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152

TC5117405

Abstract: BST60
Contextual Info: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

MM3280

Abstract: 928m
Contextual Info: TOSHIBA THM328020S/SG -60/70 8,388,608 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 328020 is a 8,388,608 word by 32 bit dynam ic RAM m odule which is assem bled with 16 TC5117400J devices on the printed circuit board. The TH M 328020 can be used as w ell as 16,777,216 word by

schottky CST

Abstract: tc5117805
Contextual Info: TOSHIBA TC5117805CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117805CJ/CFT/CST is an EDO (hyper page) dynamic RAM organized as 2,097,152 words by 8 bits.

A249

Contextual Info: TOSHIBA TC511780QANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 word by 8 bit. The TC5117800A series utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

TC5117405

Contextual Info: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which

Contextual Info: TOSHIBA TÜT724Ö 00 2û 4f l3 20b B THM324000BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM324000BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 8,388,608 words by 16 bits dynamic RAM module, by means

Contextual Info: TQR7HMÔ 0 0 2 f l 5 1 D TOSHIBA Db4 THM328020BS/BSG60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM328020BS/BSG is a 8,388,608 words by 32 bits dynamic RAM module which assembled 16 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 16,777,216 words by 16 bits dynamic RAM

Contextual Info: TOSHIBA ^0^7240 00264=57 T H M ÔTO m - 3 6 4 0 F O B S / B S G - 6 0 / 7 0 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ

Contextual Info: TOSHIBA THM368020S/SG-60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM368020 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 16 TC5117400J devices and 8 TC514100ASJ devices on the printed circuit board. The THM368020 can be used

Contextual Info: THM324000S/SG -60/70 4,194,304 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 324000S/SG is a 4,194,304 word by 32 bit dynamic RAM module which is assembled with 8 TC5117400J devices on the printed circuit board. The THM 324000 can be used as well as 8,388,608 word by

Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 woid by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC5117400CSJ

Abstract: tc5117400 5117400CSJ TCS117 TC5117400CST SH4011 IG55
Contextual Info: INTEGRATED T O SH IB A T O S H I 6 A M O S D I G I T A L I N T E G R A T E D CIRCU IT CIRCUIT TECHNICAL TC5117400 CSJ 'C S T - 40 TC5117400 CSJ/CST- 50 TC5117400 CSJ / CST - 60 DATA SILICON GATE CM O S TENTATIVE DATA 4,194,304 W O R D x 4 BIT FAST PAGE D Y N A M IC RAM