TBA 120 UB Search Results

TBA120A

Abstract: ELEKTOR DSAGER00063 tba 120 ub
Contextual Info: IBA 120 Symmetrischer sechsstufiger Begrenzer-Verstärker mit symmetrischem Koinzidenzdemodulator. NF Gehäuse: TBA 120: D IL ; TBA 120A: Q IL . DC.1 MHz DC DC . . 35 MHz EIN Entkopplung 0V Fi R si n ri ov Entkopplung ov +5 V . + 15 V DC . 35 MHz Demodulator

TBA120S

Abstract: fz 79 470 TBA120 TBA 470 tba 120 TBA120AS e fzr Keramikfilter SFE murata filter SFE 10.7 120AS
Contextual Info: FM-ZF-Verstärker mit Demodulator TBA 120 S TBA 120 AS Bipolare Schaltung S ym m etrischer, achtstu fig er V erstärker m it sym m etrischem Koinzidenzdem odulator zur Verstärkung, Begrenzung und Dem odulation von frequenzm odulierten Signalen, beson­ ders g ee ig n e t für den Ton-ZF-Teil in FS-G eräten und als FM -ZF -V erstärker in R u ndfunkge­

TBA120UB

Abstract: CDA 5.5 MC CDA 5,5 MC TBA120 TBA120T VOGT V8 TBA 325 b TBA120 WITH IC TBA120 tba120 function
Contextual Info: SIEM ENS FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage Insensitive to hum Very little residual IF

tba 120 ub

Abstract: tba120 TBA120 WITH TBA 850
Contextual Info: 47E D B23SbOS DD3404Ö SIEMENS 3 «SIE6 S I E M EN S A K T I E N G E S E L L S C H A F FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

transistor x1 3001

Abstract: x1 3001 H 76 KM616FS1010 KM616FU1010 SRAM 64k
Contextual Info: K6F1016S4M, K6F1016R4M Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft - UB, LB controls standby mode July 3, 1996 Preliminary 1.0 Finalize

cs x1 3001

Abstract: KM616FS1010 KM616FU1010
Contextual Info: KM616FS1010, KM616FR1010 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft - UB, LB controls standby mode July 3, 1996 Preliminary 1.0

SM-1994

Abstract: A2000V
Contextual Info: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention

SM-1994

Contextual Info: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

HY62QF16200A

Contextual Info: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

Contextual Info: Y62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration

ic tba 810

Contextual Info: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997 Preliminary

e53 modbus

Abstract: EN 50470 kwh meter 3 phase socomec EN50470-3 socomec countis e53 modbus iec 62053-21 COUNTIS E41 b 548 rs485 modbus connection 307U
Contextual Info: COUNTIS E Energy Measurement for your installations MADE TO MEASURE A comprehensive range for measuring your energy efficiency Software Control Vision DIRIS 514 A GAMME 115 A GB Designed to communicate with all the installation’s ­products, including and reading COUNTIS Ci, it offers the option of

Contextual Info: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

KM616FS1010

Contextual Info: Preliminary CMOS SRAM KM616FS1010Z, KM616FR1010Z Family Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision History Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997

Contextual Info: • J W V i i il n III •■ ■ l i l i l i i l l HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series i 28Kxisbit full cmos sram PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM

HY62SF16201A

Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Contextual Info: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: Metal Case Power Supplies TXH Series, 120­–360 Watt CB Scheme Features ◆ Compact U-bracket and enclosed power UL 60950-1 supplies ◆ Screw terminal block ◆ Very high efficiency up to 93% ◆ No internal fan for 120 W & 240 W models. ◆ Universal input 90 – 264 VAC

TSOP2-44

Abstract: BS616UV4010 BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI
Contextual Info: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4010 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current

BGA-48-0608

Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current