TB10S Search Results

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

Contextual Info: BL GALAXY ELECTRICAL TB2S-TB10S Reverse Voltage: 200 - 1000V Forward Current: 0.8,1.0A SILICON BRIDGE RECTIFIERS FEATURES . This series is UL recognized under Component Index, 4.4± 0.15 5.0± 0.15 BL 4.4± 0.15 6.5± 0.2 1.3± 0.15 . . . . . TBS file number E239431

tb10s

Contextual Info: TB2S ~ TB10S Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     TBS Glass passivated chip junction High surge overload rating：30A peak

TB10S

Abstract: 115 volts 3 phase bridge rectifier TB6S
Contextual Info: TB05S THRU TB10S DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * * Low forward voltage drop Ideal for printed circuit board

TB10S

Abstract: TB6S tb8s
Contextual Info: TB2S ~ TB10S VOLTAGE 200 ~ 1000 V 1.0 A Silicon Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TBS FEATURES       This series is UL recognized under Component Index, file number E239431

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm

Contextual Info: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~

Contextual Info: TB4S-05~TB10S-05 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 400~1000 Volts CURRENT 0.5 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Ultra Thin Profile Package for Space Constrained Utilization

TB6S

Abstract: E239431 tb8s
Contextual Info: TB2S-TB10S Silicon Bridge Rectifiers Reverse Voltage: 200 - 1000V Forward Current: 0.8,1.0A TBS Features 4.4± 0.15 4.4± 0.15 6.5± 0.2 0.65± 0.05 0.6± 0.1 4.0± 0.1 Mechanical Data — — — — — 0.25± 0.05 0.1± 0.05 — — — — — This series is UL recognized under Component Index,

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

TB2S-G

Abstract: TB10S-G Bridge Rectifiers
Contextual Info: Silicon Bridge Rectifiers TB2S-G Thru. TB10S-G Reverse Voltage: 200 to 1000 Volts Forward Current: 0.8,1.0 A RoHS Device Features TBS -Glass passivated chip junction. 0.028 0.70 0.024 (0.60) -High surge overload rating :30A peak -Save space on printed circuit boards.

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TB-S Package Weight mg 100 Product Group Type No. TB1S – TB10S Solder Alloy Leadframe Copper Alloy Plating Matte Tin Encapsulation Tolerance Material Doped Silicon* Die Attach

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm

Contextual Info: TB10S-12 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 1000 Volts CURRENT 1.2 Ampers FEATURES • Glass Passivated Chip Junciton 0.028 0.7 0.023(0.6) • Ideally Suited for Automatic Assembly - + 0.019(0.50) • Plastic Material : UL Flammability Classification Rating 94V-0

Contextual Info: TB1S – TB10S 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features        G Ultra-Slim 1.5mm Max. Case Height Glass Passivated Die Construction High Reliability Low Forward Voltage Drop High Surge Current Capability

TB10S

Abstract: TB6S
Contextual Info: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

TB6S-08

Contextual Info: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Low Forward Voltage Drop • Surge Overload Rating to 20A peak

tb8s

Contextual Info: SMD GALAXY ELECTRICAL Bridge Rectifiers COMCHIP SMD Diodes Specialist TB2S-G Thru. TB10S-G Reverse Voltage: 200 to 1000 Volts Forward Current: 0.8,1.0 A RoHS Device Features TBS -Glass passivated chip junction. 0.028 0.70 0.024 (0.60) -High surge overload rating :30A peak

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

n8 10229

Abstract: si f330 TB-20-S RXD-700 0po7c il232 TMP19A63 F339 TB06S TMP19A63F10XBG
Contextual Info: 32-Bit TX System RISC TX19 Family TMP19A63F10XBG Rev1.1 2008-3-28 TMP19A63 32-Bit RISC Microprocessor TX19 Family TMP19A63F10XBG 1. Overview and features TMP19A63 is equipped with the TX19A processor core that forms a high-performance 32-bit RISC processor series. The core was developed based on the MIPS32ISA that contains a 32-bit instruction