TAHC Search Results

A64S0616

Abstract: A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History History Issue Date Remark 0.0 Initial issue November 30, 2001 Preliminary 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2 Change VCCmax from 3.1V to 3.3V

TAHC

Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY

A64S0616

Abstract: A64S0616G-55 A64S0616G-70
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

0.3mm pitch BGA

Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

A64S9316

Abstract: A64S9316G-70
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

TC518128

Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L

W27C020-70

Abstract: W27C020 W27C20-70 IN914 W27C020-12 W27C020-90 W27C020P-12 W27C020P-70 W27C020P-90
Contextual Info: Preliminary W27C020 256K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C020 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 × 8 bits that operates on a single 5 volt power supply. The W27C020

EM033C08

Abstract: EM033C08N EM02R2
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random

518128

Abstract: 518128apl TC518128
Contextual Info: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V

data sw 3205

Contextual Info: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized

4430B

Abstract: 256x128x8
Contextual Info: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory

SVI 3003

Abstract: 306CE GL 3401 HP 1003 WA s4r diode CIK 81 GE 8111 GML 3401 CHARACTERISTICS marking _TH Z6 ITT
Contextual Info: M IL -M -3 8 5 1 0 /3 0 6 C 16 D e c e m b e r 1981 S U P tR b tU iH U M IL -M -3 8 5 1 0 /3 0 6 B Î U S A F 9 A u g u s t 1 9 78 M IL IT A R Y S P E C IF IC A T IO N H I CROC I R C U I T S , D I G I T A L , LOW POUER S H I F T R E G I S T E R S , M O N O LITH IC

F0110

Abstract: 004C2000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •

interface 8254 with 8086

Abstract: C1996 DS1287 IEEE-1284 MC146818 NS486 NS486SXF 25-megabyte interfacing lcd with 8086 8086 interfacing with 8254 peripheral
Contextual Info: February 1997 NS486 TM SXF Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems General Description The NS486SXF is a highly integrated embedded system controller incorporating an Intel486TM -class 32-bit processor all of the necessary System Service Elements and a

DIP28

Abstract: LC33832M LC33832P LC33832S
Contextual Info: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory

MR27V6466F

Abstract: MR27V6466FTA
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K

Contextual Info: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes

Contextual Info: AT29LV256 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 fxA CMOS Standby Current Fast Read Access Time - 200 ns

TC518512

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518512 AF / AFT - 70V TC518512 AF / AFT - 80V TC518512 AF / AFT - 1 0V DATA SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as