TABLE11C Search Results

SM32200K

Abstract: IS42SM32200K
Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42RM16160E

Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Contextual Info: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32800E

Abstract: IS42RM32800E
Contextual Info: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: IS42/45SM/RM/VM16160K Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42SM16400K

Contextual Info: I S42SM/ RM/ VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/ VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

SM16160E

Contextual Info: IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42SM32200K

Contextual Info: IS42SM/RM/VM32200K Preliminary Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42RM32400G

Contextual Info: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32800E

Contextual Info: IS42/45SM/RM/VM32800E Advanced Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32400G

Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
Contextual Info: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM16200C

Contextual Info: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32160E

Abstract: IS42SM32160E-75BLI
Contextual Info: IS42/45SM/RM/VM32160E Advanced Information 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM16160E

Abstract: IS42RM16160E
Contextual Info: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32800E

Contextual Info: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: IS42/45SM/RM/VM16160K 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32400G

Contextual Info: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42SM16200C

Abstract: IS42SM
Contextual Info: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32100C

Abstract: IS42RM32100C-75BLI IS42SM32100C
Contextual Info: IS42SM32100C IS42RM32100C IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: IS42/45SM/RM/VM32800K Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: I S42SM16200C I S42RM16200C I S42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/ VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM16160E

Contextual Info: IS42/45SM/RM/VM16160E Advanced Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42SM16400K-75BLI

Contextual Info: IS42SM/RM/VM16400K Advanced Information 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

SM16320E

Abstract: IS42RM16320E-75BLI IS42SM16320E IS42VM16320E
Contextual Info: IS42/45SM/RM/VM16320E Advanced Information 8M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16320E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42VM32800E

Abstract: IS42VM32800E-75BLI IS42SM32800E-75BLI IS42RM32800E
Contextual Info: IS42/45SM/RM/VM32800E Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs