TAA 920 Search Results

Contextual Info: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

Contextual Info: * SY10494-6/7 SY100494-6/7 SY101494-6/7 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 6/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns ■ Power supply current,

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

SY101L484

Contextual Info: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity

Contextual Info: SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 4/5/6ns max. ■ Chip select access time, tA c: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns

Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: IB M 11S4 3 2 0 BN IB M 11S4 3 2 0 BL 4M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 W c RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

Contextual Info: IB M 1 1 S 4 3 2 5 B 4M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: • • • • -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns ÏRC Cycle Time

Contextual Info: SYNERGY SEMICON DUC TOR S7E ]> • ^001301 0000053 310 SY10494-5/6 S Y N E R G Y SEMICONDUCTOR X^ RAM SY100494-5/6 SY101494-5/6 -r-^ 6 -2 5 -1 0 DESCRIPTION FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max.

sy-10

Abstract: SY100474
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 255 x 4 ECL RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. ■ Block select access time, tAB: 2ns max. ■ Write pulse width, tww: 3ns min.

SA WA

Abstract: SY101474-4 SY100474 1024-words-by-4-bits
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

MBT- 100K

Contextual Info: SYNERGY SEMI CON D U CT OR *SYNERGY S7E ]> • T0013A1 0000033 SE2 I SY10484-3.5/4/5/6 4K x 4 ECL RAM SY100484-3.5/4/5/6 SY101484-3.5/4/5/6 SEMICONDUCTOR -T -H é -Z 3 '0 8 ■ FEATURES Address access tim e, tAA: 3.5/4/5/6ns max. Chip select access tim e, tAc: 3ns max.

SY101422

Contextual Info: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: IB M 1 1 S 4 3 2 5 B P IB M 1 1 S 4 3 2 5 B M 4M X 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 W c RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time

MP 130B transformer

Abstract: mp 130b power transformer MP 130B MP 130B 00 UL5085-1 UL5085 Q230VAC IAO6 Class 130B transformer mp - 130b
Contextual Info: TAA AkJIA REV. S ta tu s REVISION 0 6 / 1 1 / 0 3 YS REVISION A ADDED RoHS & UPDATED LABELS 0 3 / 0 1 / 0 6 MP REVISION B CHG TUV FILE # WAS 8 1 0 / 8 9 E N 6 0 9 5 0 & VDE 0 5 5 1 . CLARIFIED PIN OUTS 0 4 / 2 3 / 0 7 YS REVISION C UPDATE LOGO’S TO STD IED.

Contextual Info: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and

A1312

Abstract: tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Am p. Lim. Detector //A 3065 Video Amplifier T BA 970 Chrom a Processing N T S C AiA746 , n A 780, M 781, /uA787 , M 788 Chrom a Processing P A L TAA 630 S, T BA 510 , T B A 520, T B A 540 , T B A 560 C, TBA 990

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

Contextual Info: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.