TAA 651 Search Results

Contextual Info: GM71V65163C GM71VS65163CL LG Semicon Co.,Ltd. 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥± The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced

gm71vs65163al

Abstract: GM71V65163
Contextual Info: GM71V65163A GM71VS65163AL LG Semicon Co.,Ltd. 4,196,304 WORDS x 16 BIT CMOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥± The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced

24C02

Contextual Info: HB56SW464DB-6BL/7BL 4,194,304-word x 64-bit High Density Dynamic RAM Module ADE-203-651 Z Preliminary Rev. 0.0 Sep. 12, 1996 Description The HB56SW464DB is a 4M × 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1 piece

Contextual Info: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP-II The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

Contextual Info: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥ ± The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

Contextual Info: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP-II The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

65173HG

Contextual Info: HY51V S 65173HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref) and power consumption(Normal

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

Contextual Info: G M 71V 65163A G M 71V S65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced

d4265165

Abstract: D4265165G 65A50
Contextual Info: DATA SHEET jU PD 42S 65165, 4265165 MOS INTEGRATED CIRCUIT 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S65165, 4265165 are 4,194,304 w ords by 16 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: HY51 V S 65163HG (HGL) 4Mx16, 3.3V, 4K Ref, EDO DESCRIPTION This familiy is a 64M bit dynam ic RA M organized 4 ,1 9 4 ,3 0 4 x 16bit configuration with Extended D ata Out m ode C M O S D R A M s. Extended data out m ode is a kind of page m ode which is useful for the read op era­

trw 1014

Contextual Info: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT LG Sem ïcon Co., Ltd. w w .,f c .i w . MOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced

VDR 20-100

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

Contextual Info: GM71 V S 65163C(CL) 4Mx1B, 3.3V, 4K Ref, EDO Description Pin Configuration The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

uPD4265160

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Hitachi DSA00164

Contextual Info: HM5164165A Series HM5165165A Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-453B (Z) Rev. 2.0 Oct. 15, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word × 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: HM5164165A Series HM5165165A Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-453B (Z) Rev. 2.0 Oct. 15, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304word × 16-bit. They employ the most advanced CMOS technology for high performance and low power.

29c51002

Abstract: V29C51002T V29C51002T-55T 55NS
Contextual Info: Approved Manufacturers 651-0048-WEB List for Web Parts REVISION HISTORY Description of Change Rev ECO# A E10849 Internal Release 12/15/99 Date Apvd By KAH B E12099 Release to web store, update datasheet. 10/21/02 KlS Previously sold as 100-0002. Approved Manufacturers:

TEAC FC-1

Abstract: Dynamic RAM Controller 1M200 NMB Technologies 1MX1
Contextual Info: NMB S em iconductor A A A 1 M 2 0 0 Fast P ag e M o d e C M O S 1M X 1 D ynam ic R AM PIN CONFIGURATIONS FEATURES Max. RAS Access Time 60ns 1 o Parameter -06 ->l • 1,048,576 x 1 bit Organization ■ Single 5V ±10% Power Supply ■ Performance Ranges: 70ns

K777

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 18 16 5 L, 4 2 18 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S18165L, 4218165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The /iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page