TAA 621 APPLICATIONS Search Results

Contextual Info: CY62156ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device

Contextual Info: CY62126ESL MoBL Automotive 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

Contextual Info:  CY62148DV30 4-Mbit 512 K x 8 MoBL Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Functional Description Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and

CY62148E

Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

00107

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62146ESL MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY621472E30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power

Contextual Info: CY62177DV30 MoBL 32-Mbit 2 M x 16 Static RAM Features applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE

Contextual Info: CY62177DV30 MoBL 32-Mbit 2 M x 16 Static RAM Features applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE

Contextual Info: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62137EV30

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM shy64-Mbit (4 M × 16) Static RAM Features Functional Description • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V to 3.7 V ■ Ultra low standby power ❐ Typical standby current: 8 A ❐ Maximum standby current: 48 A

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62177EV18 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns

Contextual Info: High Performance 128KX8 CMOS SRAM AS7C1024 AS7C31024 128KX8 CMOS SRAM Features • Organization: 131,072 words x 8 bits • High speed - 1 0 / 1 2 / 1 5 / 2 0 / 2 5 ns address access time - 3 / 3 / 4 / 5 / 6 ns output enable access time • Low power consumption

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: KM48V2000A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION « Performance range: tR A C tC A C tR C 60ns 15ns 110ns K M 48V 2000A /A L/A LL/A S L-7 70ns 20ns 130ns K M 48V 2000A /A L/A LL/A S L-8 80ns 20ns

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down