CY62147EV18LL Search Results

Contextual Info: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

Contextual Info: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

AN1064

Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
Contextual Info: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

AN1064

Abstract: CY62147EV18 CY62147EV18LL CY62147DV18
Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • • • • also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH

CY62147DV18

Abstract: CY62147EV18 CY62147EV18LL
Contextual Info: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

AN1064

Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA