TAA 560 P Search Results

RM1S

Abstract: automatic room power control circuit block diagram TBA520 TBA810S TAA630S TBA510 TBA970 iA781 am ssb fm demodulator a3089
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746 , n A 780 , M 781 , /uA787 , M 788 Chroma Processing PAL TAA 630 S, TBA 510 , TBA 520 , TBA 540 , TBA 560 C, TBA990

Contextual Info: SMART SM5320440UUFUGU Modular Technologies September 8, 1997 16MByte 4M x 32 DRAM Module - 4Mx4 based 100-pin DIMM, Non-buffered Features Part Numbers • • • • • • • • • • • SM53204400UFUGU SM53204401UFUGU SM53204408UFUGU SM53204409UFUGU

Contextual Info: SMART SM5640280UUNUGU Modular Technologies February 10, 1999 Revision History • February 10, 1999 Modified functional diagram on page 2. • May 6, 1998 Datasheet released Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SMART SM5640130UUNWGU Modular Technologies December 22, 1998 Revision History • December 22, 1998 Corrected physical dimension for 5V module page 12 Changed physical dimensions from inches to mm (pages 12 & 13). • January 6, 1997 Datasheet released.

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56T432D Series, HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module ADE-203-733A Z Rev.1.0 Feb. 27, 1997 Description The HB56T432D is a 4M × 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM5116400) sealed in TSOP package. The HB56T433D is a 4M ×

Contextual Info: m il W NEC Electronics Inc. MC-421000A8 1,048,576 X 8-Bit Dynamic CMOS RAM Module Description Pin Configurations The MC-421000A8 is a fast-page 1,048,576-word by 8-bit dynamic RAM module designed to operate from a single +5-volt power supply. Refreshing is accom­

HB56HW465DB-6L

Abstract: HM5165165 HB56HW465DB-5L HB56HW465DB-6 Hitachi DSA00196 70nC Nippon capacitors
Contextual Info: HB56HW465DB-5/5L/6/6L 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M × 16 components ADE-203-861A (Z) Rev. 1.0 May. 15, 1998 Description The HB56HW465DB is a 4 M × 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O.

Contextual Info: UMY3N / UNZ2N / FMY3A / FMY4A / IMZ2A Transistors I General Purpose Transistor Power Management UMY3N / UMZ2N / FMY3A / FMY4A / IMZ2A •Features 1 ) Two 2SA1037AK and 2SC1412K chips are housed in a UMT or SMT package. •Absolute maximum ratings (Tas 25 £}

Contextual Info: M ay 1990 FUJITSU IPRODUCT PROFILE: MB85230 - 80/ - 10/-12 CMOS 1M x 8 FAST PAGE MODE DRAM MODULE T he Fujitsu M B 85230 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B 81C 1000 devices. T h e M B85230

Contextual Info: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

HB56HW464ETNC-5

Abstract: HB56HW464ETNC-6 HM5165165 hitachi ras 202 ci Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56HW464ETNC-5/6, HB56HW864ETNK-5/6 32/64MB Unbuffered EDO DRAM DIMM 4-Mword x 64-bit, 4k Refresh, 1 Bank Module 8-Mword × 64-bit, 4k Refresh, 2 Bank Module 4/8 pcs of 4M × 16 components ADE-203-901A (Z) Rev. 1.0 Apr. 14, 1998 Description The HB56HW464ETNC, HB56HW864ETNK belong to 8-byte DIMM (Dual in-line Memory Module)

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

JEP-106

Abstract: JEP106 mitsubishi year code mitsubishi date code MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-6 MH4V64AXJJ MH4V64AXJJ-5 MH4V64AXJJ-6
Contextual Info: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V64/644AXJJ-5,-6,-5S,-6S FAST PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic

GM71C1000

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM781000BS is an 1M x 8 bits Dynamic RAM Module which is assembled 8 pieces of 1M bit DRAM GM71C1000BJ, lM xl in 20/26 pin small out-line J-form on a 30 pin single in-line package. These are a socket type memory module, suitable for easy

TAA 151

Contextual Info: Mono-Axial Vishay Dipped Axial Multilayer Ceramic Capacitors DIMENSIONS 5mm or 6.35mm wide carrier tape L Ø0.5 ØD 52.4 ± 1.5 CAPACITOR DIMENSIONS AND WEIGHT SIZE Lmax 1 ØDmax(1) WEIGHT (g) 15 3.8 (0.150) 2.5 (0.100) ≈ 0.14 20 5.0 (0.200) 3.0 (0.120)

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56TW432D/HB56TW433D Series 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M × 4 Components ADE-203-732C (Z) Rev.3.0 Jan. 23 1998 Description The HB56TW432D is a 4M × 32 dynamic RAM Small Outline Dual In-line Memory Module

Contextual Info: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64

Contextual Info: SEC “ ; ' NEC Electronics Inc. MC-421000A8 1,048,576 x 8-Bit Dynamic CMOS RAM Module Prelim inary Information August 1992 Description Pin Configurations The MC-421000A8 is a fast-page 1,048,576-word by 8-bit dynamic RAM module designed to operate from a

mitsubishi assembly year

Abstract: mitsubishi year code
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH4V645AWXJ -5, -6 HYPER PAGE MODE 268435456 - BIT 4194304 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION The MH4V645AWXJ is 4194304-word x 64-bit dynamic ram module. This consist of four industry standard 4M x

simm 72pin

Contextual Info: O K I Semiconductor MSC23B236A-XXBS8/PS8 2,097,152-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki M SC23B236A -xxBS8/D S8 is a fully decoded 2,097,152-word x 36-bit CMOS dynamic random access memory composed of four 16-Mb 1M x 16 DRAMs in SOJ and four 2-M b (1M

41C16000

Contextual Info: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung

HMS12864F8V

Abstract: A016 sram 1mbyte 3.3v 12NS120
Contextual Info: HANBit HMS12864F8V SRAM MODULE 1MByte 128K x 64 bit , 120-Pin SMM, 3.3V Part No. HMS12864F8V GENERAL DESCRIPTION The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit

Contextual Info: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The