TAA 243 Search Results

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

Contextual Info: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word  4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word  4-bit dynamic RAM fabricated in OKI SEMICONDUCTOR’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration,

Contextual Info: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word  4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word  4-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration, high-speed operation,

64256

Abstract: lh64256 LH64256BD 20-PIN 26-PIN
Contextual Info: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words × 4 bit The LH64256B is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’s advanced CMOS double-level polysilicon gate technology. With its input

IBM11M16735B

Abstract: IBM11M16735C e22441d
Contextual Info: Discontinued 8/98 - last order; 12/98 last ship IBM11M16730CB16M x 72 E13/11, 3.3V, Au. IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • Optimized for ECC applications • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • System Performance Benefits:

74std

Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils

m 9835

Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils

Hitachi DSA00189

Contextual Info: HB56UW873E-F 64MB Buffered EDO DRAM DIMM 8-Mword x 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M × 8 components ADJ-203-506B (Z) Rev. 2.0 ’00 6. 5 概要 HB 56 UW8 73 E は，6 4M ビット DR AM HM5 16 58 05 （TS OP パッケージ）を 9 個および 1 6 ビットラインド

CI 2272 AN

Contextual Info: SMART SM5643240UUN4GU Modular Technologies July 24, 1997 256MByte 32M x 64 DRAM Module - 16Mx4 based 168-pin DIMM, Non-Buffered Features Part Numbers • • • • • • • • • • • SM56432400UNUGU SM56432401UNUGU SM56432408UNUGU SM56432409UNUGU

Hitachi DSA00175

Contextual Info: HB56UW3272ETL-F 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 8k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADJ-203-507A (Z) Rev.1.0 ’00. 3. 15 概要 HB 56 UW3 27 2E TL は，6 4M ビット DR AMHM5 16 44 05 （TS OP パッケージ）を 3 6 個および 1 6 ビットラ

bytek

Abstract: 408-730-5511 FM27C256 AVAL DATA PKW 1000 TAA 521
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C256 Product : 256K bit UV EPROM Organization: Technology : 32k x 8 CMOS Process : TS-55 Die Size : 100 x 92 mils

IPD42S18165-60

Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode

HB56UW865DB-6FL

Abstract: HB56UW865DB-5FL Hitachi DSA00175 N/HB56UW865DB-F HB56UW865DB
Contextual Info: HB56UW865DB-F 64MB EDO DRAM S.O.DIMM 8-Mword x 64-bit, 4k refresh, 1 Bank Module 8 pcs of 8M × 8 components ADJ-203-508A (Z) Rev. 1.0 ’99. 12. 10 概要 HB56UW865DB は，64M ビット DRAM HM5165805 （TSOP パッケージ） を 8 個およびシリアル EEPROM

Hitachi DSA00175

Contextual Info: HB56UW1672E-F 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADJ-203-510A (Z) Rev. 1.0 ’00. 3. 15 概要 HB56UW1672E は，64M ビット DRAM HM5164405 シリーズ（TSOP パッケージ）を 18 個および 16 ビ

s727E

Abstract: d4216165 uPD4216165-60 tlu 011 PD4216165
Contextual Info: DATA SHEET 'J E C MOS INTEGRATED CIRCUIT /¿PD4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD4216165 is a 1 048 576 w ords by 16 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.

hb56hw465db-6FL

Abstract: HB56HW465DB-5FL HB56HW465 HB56HW465DB-F Hitachi DSA0015
Contextual Info: HB56HW465DB-F 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M × 16 components ADJ-203-509A (Z) Rev. 1.0 ’99. 12. 10 概要 HB 56 HW4 65 DB は，6 4M ビット DR AM HM5 16 51 65 シリーズ（TS OP パッケージ）を 4 個および，シ

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

*81c4256a

Abstract: 4256A
Contextual Info: June 1991 Edition 3.0 — — FUJITSU DATASHEET — M B 8 1 C 4 2 5 6 A -70U -80U -10L CMOS 256K x 4 BIT FAST PAGE MODE LOW POWER DRAM CMOS 262,144 x 4 Bit Fast Page Mode Low Power DRAM 1 The Fujitsu MB81C4256A is a CMOS, fully decoded dynamic RAM organized as 262,144 words x 4

4054

Abstract: CMOS 4054
Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High density 4 megabit and 8 megabit static RAM modules • Low profile 72-lead, gold plated SIMM Single In-line

4265165G5

Abstract: Oil 00037
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

Contextual Info: ADE-203-385A Z HN62448N Series 524,288-word x 16-bit / 1,048,576-word x 8-bit CMOS Programmable Mask ROM HITACHI T he H itach i H N 62448N is a 8-M bit CMOS Programm able Mask ROM organized either as 524,288 words by 16 bits or as 1,048,576 words by 8 bits. Realizing low power consumption, this

CMOS 4060

Abstract: ci data sheet 4060 4060 PIN DIAGRAM CMOS 4054
Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High density 4 megabit and 8 megabit static RAM modules • Low profile 72-lead, gold plated SIMM Single In-line

nec hyper

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.

MB81C1000

Abstract: 70/230/12L
Contextual Info: February 1990 Edition 1.0 FUJITSU DATA SHEET MB81CWOO-70U-80L/-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu M B81C1000 is a CM OS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000 has been designed for mainframe