TA95 Search Results

F10N12L

Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)

TA9520

Contextual Info: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement

F15N05L

Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Contextual Info: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m

f12n10l

Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
Contextual Info: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits

ta143

Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.

f12n10l

Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
Contextual Info: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L

Contextual Info: H G F E NO. NO. METAL EMILY 99/08/03 CH ANG WILSON MEGA CH'Ks APPRs T2000-0020 EMILY NO. DRWNs EC M E GA C HA NG UPDATE R E V I S E FOR SHEET 4 APPRs PEG 99/10/12 T2000-0059 CH'Ks WILSON DRWNs NO ADDED LAI EC LAI 01/06/18 APPRs M ICH AE L EMILY OFF Lin T 2 0 0 P 0 2 I7

pa 66 gf

Abstract: idc shrouded header LR46923 98464 TA-959 DPS-12-011 GS-12-415
Contextual Info: S TIME adtimes D LEA basicsle T OR .com/ H S .fci w ww W E N Product Catalog 2.00 mm SECTION www.fci.com/basics 1 MinitekTM UNSHROUDED VERTICAL HEADERS TECHNICAL DATA PHYSICAL Housing: High-temperature, black thermoplastic Flammability rating: UL 94 V-0 Pin: Phosphor-bronze

toolings

Abstract: leaf spring design Double Row, 40 Positions, 2.54 mm 0.1 in., Right Angle Header TA-895 76347-403LF 7731-1 Series HT-0095 FCI 69168 semi catalog 47439-002
Contextual Info: S TIME adtimes D LEA basicsle T OR .com/ H S .fci w ww W E N Product Catalog www.fci.com/basics 1 FCI: SETTING THE STANDARD FOR CONNECTORS MO With operations in 30 countries and sales of 1.3 billion euros in 2007, FCI is a leading manufacturer of connectors.

ta66

Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.

F15N05L

Abstract: F15N06L RFM15N06L RFM15N05L f15n05 RFP15N05L RFP15N06L tl225 RFP mosfets
Contextual Info: 3875081 G E SOLID STATE 01 DE|3ö7SDfll GD1A452 □ | ~ d T m3 1 ~ l I Logic-Level Power MOSFETs _ RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L F ile N u m b e r 1558 Power Logic Level MOSFETs T E R M IN A L D IA G R A M N-Channel Logic Level Power Field-Effect Transistors L2 FET

2C337

Abstract: A953 RFP8N18L Transistor 5C5 RFM8N18L RFM8N20L RFP8N20L rg 625
Contextual Info: 3875081 G E SOLID STATE 01 ÜE|3fl7SDâl GDlfl44G 4 Logic-Level Power MOSFETs _ ?"//' — - - RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 N-Channel Logic Level Power Field-Effect Transistors L2 FET

Contextual Info: Crimp-to-Wire Contacts and Housings 2.00 mm .079" FCI basics Dual-beam contact design for highly reliable electrical performance Latching key assures proper allignment and friction retention 2.00 mm (.079 Mating Data Technical Data Physical Operating Temperature

RFL1N08L

Abstract: RFL1N10L RFP2N08L RFP2N10L
Contextual Info: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive

TA-531

Abstract: 32 PIN euro connectors fci 50 pin (2x25), 2mm pitch header connectors BUS-12-067 latch headers pa 66 gf HT-151 TA-895 Header 2x5 Pitch 2mm HT-0073
Contextual Info: Product Catalog Dimension : mm inch www.fciconnect.com/basics 1 FCI: SETTING THE STANDARD FOR CONNECTORS MORE SERVICE. With 13,000 employees in 30 countries and sales of 1.25 billion euros in 2008, FCI is a leading manufacturer of connectors for various

pa 66 gf

Abstract: TA-895 idc shrouded header LR46923 latch headers 10087010 GS-12-415
Contextual Info: 2.00 mm section Product Catalog Dimension : mm inch www.fciconnect.com/basics 1 MinitekTM UNSHROUDED VERTICAL HEADERS TECHNICAL DATA PHYSICAL Housing: High-temperature, black thermoplastic Flammability rating: UL 94 V-0 Pin: Phosphor-bronze Plating: Gold/GXT over 1.27 m (50μ”) nickel

RFL2N05L

Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
Contextual Info: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M

F10N15L

Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level

Contextual Info: Minitek Crimp-to-Wire Contacts and Housings 2,00 mm • Dual-beam contact design for highly reliable electrical performance ■ Latching key assures proper alignment and friction retention 69307 2x14 Technical Data Mating Data Physical Operating Temperature

90311 E66906

Abstract: 77139 LR46923 77138
Contextual Info: Minitek CRIMP-TO-WIRE CONTACTS AND HOUSINGS 2.00 mm .079" Dual-beam contact design for highly reliable electrical performance Latching key assures proper alignment and friction retention TECHNICAL DATA Physical Housing: Black thermoplastic Flammability rating: UL 94 V-0

IGBT 20N50

Abstract: 20n50 20N50A RCP20N40 20n40 RCH20N50A RCH20N40A RCP20N50 20N50 HARRIS DIODE 25PH 500
Contextual Info: Insulated-Gate Bipolar Transistors IGTH/IGTM/IGTP20N40 IGTH/IGTM/IGTP20N40A IGTH/IGTM/IGTP20N50 IGTH/IGTM/IGTP20N50A File Number 2174 TE R M IN A L DIAGRAM N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 20 A, 400 V and 500 V

RFP2N15L

Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
Contextual Info: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits

10N50A

Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode

RFL1N20L

Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET