TA17637 Search Results

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

Contextual Info: JANSR2N7396 S E M I C O N D U C T O R Formerly Available As FSL230R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

r4373

Contextual Info: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

fss230

Abstract: S230D
Contextual Info: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS230D, FSS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features • 8A, 200V, Package = 0.440Q TO-257AA • Total Dose - Meets Pre-Rad Specifications to 100K RAD Si • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

Contextual Info: h a r r is S E M I C O N D U C T O R FSL230D, FSL230R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Package Features • 5A, 200V, rDS ON = 0.460SÌ TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7400 HARRIS S E M I C O N D U C T O R August 1997 Formerly Available As FSS230R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, ros ON = 0.440£2 The Discrete Products Operation of Harris Semiconductor

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: h a r r is S E M I C O N D U C T O R FSS230D, FSS230R W " W U • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Ju n e 1 9 9 7 Package Features • 8A, 200V, rDS ON = 0.440SÌ TO-257AA • Total Dose M eets Pre-Rad Specifications to 100K RAD (Si)

Contextual Info: FSL230D, FSL230R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Package • 5A, 200V, roS{ON = 0.46012 Total Dose Meets Pre-RAD Specifications to 100K RAD Si) Single Event Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7400 S E M I C O N D U C T O R August 1997 Formerly Available As FSS230R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

MIL-S-19500

Abstract: Rad hard MOSFETS in Harris 2E12 FSS230D FSS230R fss230
Contextual Info: S E M I C O N D U C T O R FSS230D, FSS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 8A, 200V, rDS ON = 0.440Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects