TA17631 Search Results

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: 3 HÄ« » JANSR2N7272 Formerly FRL130R4 Features Description • 8A, 100V, Tqs o N) = 0.18011 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7272 Œ Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ros ON = 0.180S2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

180I2

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ro s O N = 0.180i2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

1334 diode

Abstract: 1E14 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S E M I C O N D U C T O R Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs June 1997 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both