MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP8100CC
Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted
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Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC Semiconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery. <85ns JEDEC TQ-220AB • Operating
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1334 diode
Abstract: RURP880CC RURP8100CC RURP870CC RURP890CC
Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <85ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RUR8100
Abstract: MUR8100 MUR8100E RURP8100
Contextual Info: MUR8100E, RURP8100 in te rd i Data Sheet Ja nu a ry 2000 File N u m b e r 2 7 8 0 .4 8A, 1000V Ultra fast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes • Ultrafast with Soft Recovery .<75ns • Operating Temperature. 175°C
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RURP8100CC
Abstract: IGBT 1000V .200A
Contextual Info: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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MU8100
Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP880CC
Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S em iconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Package Features • Ultrafast with Soft Recovery. <85ns JEDEC TO-220AB • Operating
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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ULTRAFAST SOFT RECOVERY RECTIFIER
Abstract: RURP8100CC
Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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MU8100
Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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mur8100erurp8100rur8100175oc+1mur8100
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