TA 842 K Search Results

Contextual Info: M IT S U B IS H I <DIGITAL ASSP> M 74H C T 842-1P /F P 1 0-B IT 3-S TA T E IN VE R TIN G D -T Y P E TR AN SPA REN T LATCH W IT H L S T T L -C O M P A T IB L E IN PU TS DESCRIPTION The M74HCT842-1 is a sem iconductor inte grated circuit consisting of ten 3-state output D -typ e latches w ith common

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

Contextual Info: DS55-0004 M/A-COM Preliminary Specifications Low Cost Five-Way GMIC SMT Power Divider 824 - 896 MHz Features • • • • • • • 4 i £k g m k fv'irrn'.-.viw-. ^ r r l i i c K SOIC-16 Small Size, Low Profile Superior Repeatability Lot-to-Lot Variation

VN64GA

Abstract: irf840 TD4A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a D r/\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix

10H84

Contextual Info: *SYNERGY CLOCK SYSTEM DESIGN A P P L I C A T I O N S BR I EF AB-02 SEMICONDUCTOR INTRODUCTION C lo c k d is trib u tio n is a s ig n ific a n t d e s ig n c h a lle n g e fo r s yste m s o p e ra tin g a b o v e 2 5 M H z . T h e S y n e rg y P E C L se rie s of c lo c k c h ip s s im p lifie s d e s ig n s by s ig n ific a n tly

IRF440

Abstract: IRF450 irf420 IRF340 IRF350 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220

KU 601

Abstract: FLK027WG FLK027
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

fujitsu gaas fet

Abstract: FLK027WG FLK027
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

2SA842

Abstract: 2SA842-BL IC-224 2SA84 2SA842-GR ica 700 ulma Produced by Perfect Crystal Device Technology transistor 2SA TRANSISTOR nf 842
Contextual Info: i / i n y p N P x t : 9 * 5/ ? \ Æ h 5 y ÿ Z 9 p c T m ) SILICON PNP o EPITAXIAL TRANSISTOR (P C T PROCESS)^ r 2SA 842 U n i t i n mm Low N o i s e A u d i o A m p l i f i e r A p p l i c a t i o n s 05.8 MAX. • SUS-fflfttfM'-SWo • ¡ t» S * i# i|6 $ # & w 0

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

FLK027WG

Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general

gt 1141

Contextual Info: SINGLE SUPPLY QUAD PECL-TO-TTL WITH LATCHED O UTPUT ENABLE sMlbSX^CTOR Clockworks SY10H842 SY100H842 DESCRIPTION FEATURES • Translates positive ECL to TTL PECL-to-TTL ■ 300ps pin-to-pin skew ■ 500ps part-to-part skew ■ Differential internal design for increased noise

Contextual Info: MIC841/842 Comparator with 1.25% Reference and Adjustable Hysteresis General Description Features The MIC841 and MIC842 are micropower, precision voltage comparators with an on-chip voltage reference. • • • • • • • • Both devices are intended for voltage monitoring

2SC2125

Abstract: AC42C 2200VA
Contextual Info: N0. AC 42C KIT Ta=25°C MOUNTING g K fc 0\ * p. Ih X CHARACTERISTICS £ a. i' C5 A <J BS & linia p* z z A n •R Q •e Ul _l 0. ce m Bh * Q . w > •K p < ir\ 3 H Z /?> w H •p ¡3 ft « « •P S o * iH a) ■p a o N •H ■h U O X S » N ta > •R H

56DL

Abstract: SN74AS841
Contextual Info: TYPES SN54ALS841, SN54AS841, SN54ALS842, SN54AS842 SN74ALS841, SN74AS841, SN74ALS842, SN74AS842 10-BIT BUS INTERFACE D TYPE LATCHES WITH 3 STATE OUTPUTS D 2 8 2 5 , DECEMBER 1983 • 3-State Buffer-Type Outputs Drive Bus-Lines Directly • Bus-Structured Pinout

Contextual Info: AMPHENOL MASS TERMINATED IDC CONNECTORS 816 SERIE PROTECTED HEADERS - THREE AND FOUR SIDED Standard Pitch Sockets & Headers benefits • • • • • • • MIL-C- 83505 compatible Snap-in polarization keys Easy to install lock & eject latches Right-angle and straight mounting styles

D 843 Transistor

Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
Contextual Info: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842

Contextual Info: MIC841/842 Comparator with 1.25% Reference and Adjustable Hysteresis General Description Features The MIC841 and MIC842 are micropower, precision voltage comparators with an on-chip voltage reference. Both devices are intended for voltage monitoring applications. External resistors are used to set the voltage

MIC841LB

Abstract: MIC842NYC MIC841HYC5
Contextual Info: MIC841/842 Comparator with 1.25% Reference and Adjustable Hysteresis General Description Features The MIC841 and MIC842 are micropower, precision voltage comparators with an on-chip voltage reference. Both devices are intended for voltage monitoring applications. External resistors are used to set the voltage

Marking B13

Contextual Info: MIC841/842 Comparator with 1.25% Reference and Adjustable Hysteresis General Description Features The MIC841 and MIC842 are micropower, precision voltage comparators with an on-chip voltage reference. Both devices are intended for voltage monitoring applications. External resistors are used to set the voltage

Contextual Info: Hauptübersicht | Kapitelinhalt | Index Main Overview | Chapter Content | Index WU-M-028- _ _ LED-Hintergrundbeleuchtung mit direkter Lichteinstrahlung für LCD-Anzeigen und andere lichttechnische Anwendungen LED-Backlights with direct light irradiation for LCD-Displays and other