T910 Search Results

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

AD9101

Contextual Info: S P 5P79VOV T SIGNAL PROCESSING TECHNOLOGIES 125 MSPS SAMPLE-AND-HOLD AMPLIFIER FEATURES APPLICATIONS • Second S ource of A D 9 1 01 • 350 M Hz S am pling Bandw idth • 125 M Hz S am pling Rate • Excellent Hold M ode D istortion -75 dB at 50 M SPS 23 M Hz V |N

t430 transistor

Abstract: 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K
Contextual Info: SEC j m*Ti\rx A S ilic o n T r a n s is to r _ 2SB605 P N P ik 7 + '> 7 ^ ' > >J □ > h =7 7 .9 PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o t — r" 'i 7 > ~7 ° ¥ f c o V KMffl/ PACKAGE DIMENSIONS * y 4 U n it : mm

5Bt fet

Abstract: 2SK119 transistor afr 46 transistor T700 transistor afr 22 Tic T430 t280 930 T430 T030 T108
Contextual Info: NEC j ! T f / \ f X h =7 J u n c tio n Field E ffect T ra n s is to r A 2 S 1 K 1 9 JH /.$? -*tt ilfix U ffl Silicon N-Channel Junction FET DC Amplifier, High Frequency Amplifier Industrial Use ? l 4 t ± \ z £ f) 2SK119Ü, <, o i) — 0 /PA C K A G E DIMENSIONS

Contextual Info: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is

l9122

Abstract: IT8510 asus RC415ME 12G140001089 ATI SB600 CON3603 RC415M ISL6262CRZ foxconn
Contextual Info: 5 4 3 2 1 T12R Block Diagram FAN + SENSOR MAX6657MSA PAGE 4 V2.0 CLOCK GEN ICS951463 CPU YONAH-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz PAGE 40 DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT & TV OUT PAGE 13 PAGE 41 DDR2-533

cx3804

Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Contextual Info: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2

mcp67m

Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON

IT8511TE

Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
Contextual Info: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216

M51VA

Abstract: IT8512E-L C4469 U4001D asus 2sc8802 25C0401 Q3705 C4477 G780
Contextual Info: A B C D E F6Ve SCHEMATIC Revision 1.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-PENRYN 1 CPU-PENRYN(2) CPU CAP, Thermal Senor

Attansic L1

Abstract: IT8511TE ALC660 bd3702 c5914 c5803 cd3102 asus attansic f1 C4422
Contextual Info: 5 Block Diagram 61 02 System Setting 62 C * 63 * 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM * 66 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN. 11 11_CRESTLINE(PWR)

c3148

Abstract: it8511te D8802 asus 2C1208 RAY 33A A23 851-1 diode C1108 d1902 C3152
Contextual Info: A B C D E F6E SCHEMATIC Revision 1.10 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor

IT8511TE

Abstract: asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT
Contextual Info: 5 01 D B A 61 02 System Setting 62 USB CONN * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN.

AU-6433

Abstract: RTM875T MB39A132 IT8502 N10M-GE1 R0326 asus alcor au6433 RTM875T-336 8796G
Contextual Info: 5 4 3 2 UL50AT CLOCK GENERATOR RTM875T-336 Penryn SFF D 1 FAN & THERMAL SENSOR 956 uFCBGA D FSB 800MHz IO BOARD LVDS DDR3 SDRAM 800 MHz GS45 Express CRT 1363 uFCBGA HDMI Azalia STANDARD DDR3 DIMM REVERSE DDR3 DIMM DMI 2X ONLY C C IO BOARD SATA 2.5" HDD USB

ITE 8511

Abstract: ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048
Contextual Info: 5 4 3 2 1 T76S: MEROM/965-PM/ICH8-M/NB8M-SE BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T GDDR2 VRAM*4 16X16 D Merom PAGE 21 D 478B uFCPGA FAN + Thermal sensor 84 FBGA PAGE 51 PAGE 3,4,5 PAGE 36 FSB 800 MHz LVDS nVIDIA NB8M-SE PAGE 34 CRT PAGE 35 533 BGA POWER

T716

Abstract: T714 t918 t505 Elite Microelectronics t718 T10610 t702 8 T907 T101
Contextual Info: 9. e88C 412 ELECTRICAL & TIMING SPECIFICATION 9.1 Storage and Operating Characteristics 9.1.1 Absolute Maximum Ratings Vss = 0 volts Stresses above the conditions listed in this section may cause permanent damage to the device. This is a stress rating only. The functional operation of the device at these or any

Contextual Info: OVERVIEW Single Source Solutions… In Plastic Profile & History Flambeau, Inc. is a worldwide industry leader in thermoplastic manufacturing, specializing in both injection and blow molding. Flambeau possesses the largest array of proprietary stock products

IC L358

Abstract: cl3520 CT-0245AQ4-R L353-0119-3 CT-0245AQ3-R L351 AT82 L353-0057-8 MC-401RC HD-21503S
Contextual Info: Contents Series WS No. Part No. Page Circulators-lsolators CL351—0010~ 1 CT-0245AQ2-R C L351-0011-4 CT-0245AQ3-L C L351-0012-7 CL351-0013-0 CT-0245AQ3-R CT-0245AQ4-R CL351-0005-1 CT-0395BR6-R CL351-0006-4 CT-0395BR6-R-3 CL351-0008-0 CT-1310CQ6-L C L351-0009-2

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: ADVANCE jp il r p n M MT9LD272 B N , MT18LD472 B(N) 2, 4 MEG X 72 BURST EDO DRAM MODULES BURST EDO IDRAM MODULE 2, 4 MEG x 72 16,32 MEGABYTE, 3.3V,ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, d ual-in-line m em ory m odule (D IM M )

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

High-Power NPN Silicon Power Transistor 50A

Abstract: A13 transistor 0504336
Contextual Info: ALL E GR O MICROSYSTEMS INC 13 D • []50433fl D D G 3 b ö T 1 ■ AL6R T-91-01 PROCESS FBB Process FBB NPN High-Power Transistor Process F B B is a double-diffused epitaxial planar N P N silicon device. It is designed for use in power amplifier and switching circuits.