T73 LASER Search Results

CM600-28

Abstract: diode 200 Ampere IGBT BP107 CM600HA-28 T73 laser diode 600A
Contextual Info: b4E D • 7 2 t14b21 0D0tt.7b T73 * P R X CM600HA-28 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 A venue G. Durand, BP107, 72003 L e Mans, France (43) 41.14.14 Single IGBTMOD j^ /fQ £ ju l&

NDL5731P

Abstract: L5720P
Contextual Info: N E C ELECTRONICS INC upf f _ b42?S5S 0037T4T 315 « N E C E J> m PRELIMINARY DATA SHEET NEC LASER DIODE NDL5728P, NDL5728P1 ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE W ITH SINGLEMODE FIBER DES C R IP TIO N N D L5728P and NDL5728P1 are 1 55 0 nm laser diode coaxial modules with singlemode fiber. It incorporates InGaAs monitor

laser diode philips

Contextual Info: N AMER PHILIPS/DISCRETE S7D D • ^ 5 3 ^ 3 1 0DD1737 fl ■ / DEVELOPMENT DATA T-41-07 503CQF Thl$ data sheet contains advance in fo rm a tio n and specifications are subject t o change w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL

Contextual Info: Whpl H E W L E T T mLfiÆPA C K A R D 14 Pin DFB Laser Module With Cooler Technical Data LSC2210 F eatures Description • >1 M illiwatt Optical Output LSC2210 laser modules are highly reliable fiber optic light sources operating in the 1550 nanometer band. The internal DFB lasers are

Contextual Info: s e MIKRDn Absolute Maximum Ratings Sym bol C onditions ' V ds Rgs V dgr = 20 kQ Id Id m V gs Pd Tj, Tstg Visoi humidity climate AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 35 140 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V A A V W °C

mach zehnder interferometer

Abstract: 28 sc ML6XX10
Contextual Info: blE D • bEMTöST DDlHbEI 442 ■ MIT5 MITSUBISHI LASER DIODES ML6XX11 SERIES niTSUBISHI DISCRETE SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME FEATURES DESCRIPTION M L6XX11 is a h ig h -p o w e r AIGaAs semiconductor • O utput 35mW (CW), 45mW (pulse)

VC401

Contextual Info: V T C IN C 9388929 D I GGDmSl S V T C INC _ D T-73'I3'03 9 D _ 9 1A 5 1 VC401 M O N O LIT H IC V O LT A G E-T O FREQUENCY CONVERTER A D V A N C E IN FO R M A TIO N FEATURES • Full Scale Frequency: 20MHz •TTL/CMOS-Compatible Open Collector Output • Internal 40pF Capacitor

diode uc 31u

Abstract: CM100TF-28H diode A26C
Contextual Info: m N EREX CM100TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍX-IGBTIG BT M O D H-Series Module 100 Amperes/1400 Volts Description: Powerex IG BTM O D ™ Modules are designed for use in switching applications. Each module consists

Contextual Info: 00133^5 037 cl ltjuNi^v * MITSUBISHI OPTICAL DEVICES MF-622DS-T12-230/240/250 /260 2nd GENERATION SONET/SDH TRANSCEIVER DESCRIPTION FEATURES MF-622DS-T12-230/ 2 4 0 /2 5 0 /2 6 0 are designed to • Extremely compact package by monolithic specific provide transm itter w ith high optical performance

367S

Abstract: D456 D-456
Contextual Info: 05210 ESD4-LFC Only One Name Means ProTek’Tion LOW CAPACITANCE flip chip tvs array Description The ESD4-LFC is a low capacitance flip chip transient voltage suppressor array, designed to protect portable devices from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). This series meets the IEC 610004-2 and 61000-4-4 requirements. This device is ideally suited for portable devices, PCMCIA and SMART phones.

ESD4-LFC

Contextual Info: 05210 ESD4-LFC Only One Name Means ProTek’Tion LOW CAPACITANCE flip chip tvs array Description The ESD4-LFC is a low capacitance flip chip transient voltage suppressor array, designed to protect portable devices from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). This series meets the IEC 610004-2 and 61000-4-4 requirements. This device is ideally suited for portable devices, PCMCIA and SMART phones.

burr-brown Model 4203

Abstract: L420 Burr-Brown 4203
Contextual Info: BURR-BROQJN CORP 11E I 17313LS T QD14aOO 0 | - " 7 3 MPY534 B U R R -B R O W N ® [ MILITARY & DIE V E R S IO N S AVA ILA B LE Precision ANALOG MULTIPLIER FEATURES DESCRIPTION • ±0.25% MAX 4-QUADRANT ERROR T h e M PY 534 is a high accuracy, general purpose

Contextual Info: MITSUBISHI DIGITAL ASSP M 6 6 5 1 O P /F P LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying

Contextual Info: corp H E D I b b ^ I MPY634 Wide Bandwidth PRECISION ANALOG MULTIPLIER FEATURES DESCRIPTION • WIDE BANDWIDTH: 10MHz typ The MPY634 is a wide bandwidth, high accuracy, four-quadrant analog multiplier. Its accurately lasertrim m ed multiplier characteristics make it easy to

80S8

Abstract: VDE 0812 OP-177 dbqp AD7884 AD7884AN AD7884AP AD7884BN AD7884BP ac to dc conversion by pie filter circuit
Contextual Info: ANALOG DEVICES LC2M0S 16-Bit High Speed Sampling ADCs AD7884/AD7885 FEATURES Monolithic Construction Fast Conversion: 5.3 i n High Throughput: 166 kSPS Low Power: 250 mW FUNCTIONAL BLOCK DIAGRAMS A G ND S AGNDF A V m * V SS V|x> Vs s O—O— 0— 0—0 - 0 -

Contextual Info: OPA132 OPA2132 OPA4132 High Speed FET-INPUT OPERATIONAL AMPLIFIERS FEATURES • FET INPUT: lB = 50pA max OPA132 • WIDE BANDWIDTH: 8MHz • HIGH SLEW RATE: 20V/}is • LOW NOISE: 8nV/VHz 1kHz • LOW DISTORTION: 0.00008% • HIGH OPEN-LOOP GAIN: 130dB (600ft load)

Contextual Info: fàSPT S/GNAL PROCESSING TECHNOLOGIES SPT7920 12-BIT, 10 MSPS, TTL, A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 10 MSPS Converter 66 dB SNR @ 1 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input

3554

Contextual Info: Or, Call Customer Service i t WII-54S-6132 USA Only FEATURES APPLICATIONS • SLEW RATE: 1000V|!S • PULSE AMPLIFIERS • FAST SETTLING: 150ns, max (to ±0.05%) • TEST EQUIPMENT • GAIN-BANDWIDTH PRODUCT, 1.7GHz • WAVEFORM GENERATORS • FULL DIFFERENTIAL INPUT

Contextual Info: BURR-BROüJN CORP H E D I 17313L5 B U R R -B R O W N « DD14na I S MPY100 i M ILIT A R Y & D IE V E R S IO N S A V A IL A B LE MULTIPLIER-DIVIDER FEATURES APPLICATIONS LOW COST MULTIPLICATION DIFFERENTIAL INPUT DIVISION ACCURACY 100% TESTED AND GUARANTEED

Contextual Info: DALLAS DS1982 1Kbit Add—Only Touch M6mory se m ic o n d u c to r SP EC IA L FEA TU RES COMMON TOUCH MEMORY FEATU RES • 1024-bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory-lasered and tested 64-bit registra­

Contextual Info: DAC650 12-Bit 500MHz DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • 12-BIT RESOLUTION • DIRECT DIGITAL SYNTHESIS • 500MHz UPDATE RATE • GUARANTEED SPURIOUS PERFORMANCE • ARBITRARY WAVEFORM GENERATION • HIGH RESOLUTION GRAPHICS • COMMUNICATIONS LOCAL OSCILLATORS

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

diode B14A

Abstract: B14A S2035 52033 K285 S2032
Contextual Info: PRELIMINARY DEVICE SPECIFICATION HIGH PERFORMANCE SERIAL INTERFACE CIRCUITS FEATURES • Functionally compliant with ANSI X3T9.3 Fibre Channel physical and transmission protocol standards • S2032 transmitter incorporates phase-locked loop PLL providing clock synthesis from lowspeed reference