D456 Search Results

D456a

Contextual Info: Green Product STU/D456A S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 23 @ VGS=10V

Contextual Info: Green Product STU/D456S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 24 @ VGS=10V

CD4560B

Abstract: CD4560 4560B D456 D4560
Contextual Info: HAR D4560B Types High-Voltage Types 20-Volt Rating 92CS-39I97 F U N C T IO N A L DIAGRAM Features: • F our sum o u tp u ts p lu s c a rry o ut ■ S ta n d a rd iz e d s y m m e tr ic a l o u tp u t chara cteristics ■ M a xim u m in p u t c u rre n t o f 1 /j A at

Contextual Info: D4560X Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT

Contextual Info: D4562X Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT

p0406fc

Abstract: P0406FCxxC Series
Contextual Info: 05155 P0406FC3.3C - P0406FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0406FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

Contextual Info: 05107 P0402FC3.3C* thru Only One Name Means ProTek’Tion P0402FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community AM1806 SPRS658F – FEBRUARY 2010 – REVISED MARCH 2014 AM1806 ARM Microprocessor 1 AM1806 ARM Microprocessor 1.1 Features 1 • 375- and 456-MHz ARM926EJ-S RISC MPU

p0404fc

Abstract: P0404FCxxC Series
Contextual Info: 05154 P0404FC3.3C - P0404FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0404FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.

p0408fc

Abstract: P0408FCxxC Series
Contextual Info: 05156 P0408FC3.3C - P0408FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0408FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.

lc0404fc

Abstract: LC0404FCxxC Series
Contextual Info: 05157 LC0404FC3.3C - LC0404FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0404FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.

lc0408fc

Abstract: LC0408FCxxC Series
Contextual Info: 05153 LC0408FC3.3C - LC0408FC36C Only One Name Means ProTek’Tion 200w low capacitance flip chip tvs array Description The LC0408FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.

FT 12.000 MHZ

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 1505A Coax - RG-59/U Type For more Information please call 1-800-Belden1 Description: 20 AWG solid .032" bare copper conductor, gas-injected foam HDPE insulation, Duofoil + tinned copper

D452

Abstract: ST173S D454 equivalent D456 TO93 D458
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-450 To Order Previous Datasheet Index Next Data Sheet Bulletin I25181/B ST173S SERIES Stud Version INVERTER GRADE THYRISTORS Features 175A All diffused design Center amplifying gate

D2-470K

Abstract: D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K
Contextual Info: HIGH CURRENT DRUM CORE INDUCTOR SERIES D 59 B ELECTRICAL CHARACTERISTICS - Inductance - Tolerance - Rated current - Testing procedures 1.0uH to 4700uH ± 20% for values under 10µH ± 10% for values above 10µH Obtained when Lo drops 10% typical Quadtech LCR 1750 Meter @ 1KHz

Contextual Info: 05107 P0402FC3.3C* thru P0402FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns

Contextual Info: 05154 P0404FC3.3C* thru Only One Name Means ProTek’Tion P0404FC36C* FLIP CHIP ARRAY APPLICATIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPATIBILITY EN61000-4 0404 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

k d718

Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
Contextual Info: Ordering number : ENN*6473 CMOS IC LC75878E, 75878W 1/8 to 1/10 Duty General-Purpose LCD Display Drivers Preliminary Overview Package Dimensions The LC75878E and LC75878W are 1/8 to 1/10 duty general-purpose LCD display drivers used for character and graphics display. These products operate under the

belden 9370

Abstract: RG6 ATTENUATION FT 12.000 MHZ A/belden 9370
Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 1694A Coax - Low Loss Serial Digital Coax For more Information please call 1-800-Belden1 Description: RG-6/U Type, 18 AWG solid .040" bare copper conductor, gas-injected foam HDPE insulation, Duofoil +

D4564323

Contextual Info: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿D4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿D4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,D4564323 is a high-speed 67,108,864-bit synchronous dynamic random -access memory, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,D4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.