T72F Search Results

15- 05819

Abstract: AEG T72F aeg diode S100 T72F um 44 diode DUB H4 circuit
Contextual Info: 0029426 A E G 81C 05818 CORP AEG CORP 0 1 De | □□STMEtzi DDGSfllfl 3 • T 7 2 F €> T y p e n re ih e /T y p e ra n g e T72F E le k tris c h e E ig e n s c h a fte n Electrical* p ro p e rtie s 200 * H ö c h s tz u lä s s ig e W e rte M a x im u m p e rm is s ib le v a lu e s

Contextual Info: NOTE*. '/ £ r L i /\*7y - 7" 2. ^ ^ 3. % /4 ^ 'ilr r n /} -5. - it ij i! n 3. THE MATINGi / 7 Z/?Z 2. A P PLIE D /702& 0. COUNTERPART CONTACT . % PART NUMBER I /?Z/?2 8 190280 3« TO BE MATE \a/ItH CAP HGUSiMiK^ ! t72f 9l' 3 MOO THLY ^ T O BE MEASURED .BETWEEN R a 3 ] /4N P 2

T72F

Abstract: DIN41892 AEGG
Contextual Info: A E ^ - A K T I E NGES EL LSCH AF T SIC D • DÜS^mS O O D S a ia 7 ■ AE66 T72F Typenrelhe/Type T72F_ 200*_400_ Elektrische Eigenschaften Eiectricarproperties Höchstzulässige Werte Udrm.U rrm Periodische Vorwärts-und

Contextual Info: EUPEC S2E D 3 40 3 2 = 1 7 DG0D455 2b0 «UPEC T 72 F 7 ^ 2 d T -/7 Typenreihe/Type range 200* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 200.800 200.800 V Vdrm Vrrm Itrmsm Itavm •tsm / i 2dt di/dt cr

NF041

Contextual Info: EUPEC S2E J> 34Q32T7 00G0451 blS * U P E C T 50 F - F Z S r / ? Typenreihe/Type range 200* 400 600 8009001000 110012001300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 200.1300 V 200.1300 Vdrm Vrrm

7802901JX

Abstract: HD1-15530-8 HD4-15530-8 78029
Contextual Info: D ESC FORM 193 MAY 86 Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN

BFY99

Abstract: BF109 2sc700 2sc113 transistor bf109 11C1F1 BC140D MT20 RT5001 RT5003
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

028A5

Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

5U100

Abstract: 2SC5220 MSP90 028A5 BLY95 B3617 2sc5240 S708 B3616 B3749
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

transistor 2SC114

Abstract: transistor bf109 BF109 2SC114 2sc700 T05 Package PNP power transistor 2n 2SC107 BFY99 MST100 RT5004
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

BF109

Abstract: 50kSA BFY99 MT75d 35834B MST15 MST60 RT5003 V643 MST30
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

diode t85

Abstract: 2N7805 trf 510 transistor 2N2152 transistor 45 f 122 32N03 t85 diode 2N1073 TRF 840 2N2144A
Contextual Info: PNP HIGH POWER TRANSISTORS 7 | OODOOIS I>e | 2844352 27 co C D C D C D C O C D C O C D C O C O C D C D C O C O C O C O ''a C O C O C O C O C O C O C O C O C O C O C O C D C D C O C O C D C O C O C D C O O OOOOOOOOOOOOOOOOOOOOÇM I— I— I—I— I— I— i— I— I— I— I— I— 1— 1— 1— I— I— f- I— 1— >“

MSP90

Abstract: D28A12 2sc910 cross 028A5 MHT4515 B3616 B3617 B3749 D28A5 D28A6
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

aeg thyristors

Abstract: AEG T24F AEG T 51 N 1200 T72F aeg t 388 AEG T 509 N 1600 AEG T 25 N 1100 000130 aeg tt 46 n 1200 955 100 12 LAO
Contextual Info: 17E D • D aam ab 0G CH 305 s ■ T '- j i S ’ - o / Thyristoren für selbstgeführte Stromrichter Thyristors for seif-commutated converters Thyristors pour applications fréquence Typ Type Vdrm Vrrm V Itrmsm Itsm t=iOms M= *v max 45°C / ftlt hWM/tc t=1Oms

ST7DALI

Abstract: t7fliteusx HE10 he10 SOCKET ST7SB20J STX-RLINK ST7-SocketBoard ST72F344
Contextual Info: ST7-SocketBoard Programming sockets for ST7 microcontrollers Data Brief Features • ICC interface HE10 connector for connection to any ICP capable ST7 development tool ■ Supports 3.3V - 5V ICC connector Description The ST7-SocketBoards (ST7SBxx) complement