T45 DIODE Search Results

b 772 p

Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772

BFG425W

Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:

L05 SMD

Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W

BF908 Application Note

Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Contextual Info: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS

BFG425

Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

BFG403W

Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly

AEG T 25 N 1100

Abstract: AEG T45F aeg diode AEG T 25 N 1000 aeg td AEG t 45 n 1100
Contextual Info: 0029426 A E G T45 P AEG 81C 05811 CORP CORP " T yp enreihe/Typ e range_ T 4 5 F _ 2 0 0 * 400 Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um perm issible values U drmi U rrm Periodische Vorwärts-und

B 0920

Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

A115A

Abstract: A115M A115 A115F diode A115m A115B A115C A115D A115 Series A115-A
Contextual Info: HA RR IS S E M I t O N D S E CT OR bflE D • 43 G22 71 0 0 5 0 31 7 T45 H I H A S A115 Series 33 h ae e sî 3A, 50V - 600V Diodes December 1993 Package Features • Glass Passivated Junction AL-3 TOP VIEW • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

L05 SMD

Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

2n2222+spice+model

Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

BFG425W

Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.

ci 740

Abstract: 1C45 DH744
Contextual Info: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO

Contextual Info: ANALOG DEVICES Low Voltage SOT-23 Temperature Sensors ADT45/ADÏ50 FEATURES Low Voltage O peration 2.7 V to 12 V Calibrated D irectly in °C 10 m V/°C Scale Factor ±2°C Accuracy Over Tem perature (typ) ±0.5°C Linearity (typ) Stable w ith Large Capacitive Loads

20823

Contextual Info: Zener Diodes 2.0 Watt Zener Diodes/DO-41 Type Number ZY1 ZY3.9 ZY4.3 Zener Voltage Range* Test Current Maximum Zener Impedance Typical Temperature Coefficient Maximum Zener Current At Izj Vr IzM %/°C Volts mA VZ @ IzT Volts mA 0.71-0.82 3.7-4.1 4.0-4.6 100

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 1kA > AK1 series RoHS AK1 Series Description The AK1 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC . Any voltage

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 1kA > AK1 series RoHS AK1 Series Description The AK1 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC . Any voltage

Contextual Info: 1N4370 thru 1N4372 INTERNATIONAL SEMICONDUCTOR, INC. 1N746 thru 1N759 400 MILLIW ATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MAXIMUM RATINGS O p e ra tin g T e m pe ratu re: -65 °C to +175 °C -65 °C to +175 °C 400 mW at 75 °C 4.0 m W /'C above 75 °C

ECG245

Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 10kA > AK10 series RoHS AK10 Series Description
been specially designed for use in A.C. line protection and any demanding applications AC or DC .They offer superior

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 10kA > AK10 series RoHS AK10 Series Description
have been specially designed for use in A.C. line protection and any demanding applications AC or DC .

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 6kA > AK6 series AK6 Series RoHS Description The AK6 series of high current transient suppressors have been specially designed for use in A.C. line protection and any demanding applications AC or DC .They offer superior