MM1185
Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
Contextual Info: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.
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BDV65;
BDV65B;
0D433L0
T-33-Z
BDV64,
BDV65
7Z77501
MM1185
BDV65
BDV65B
PHILIPS 1980
BDV65, BDV64
dv65
BDV64
LP 7510
7Z82768
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3m421
Abstract: "Silicon Power Transistors" T8480
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.
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BDT82;
BDT84
BDT86;
BDT88
-31-Z
maxZ92354
3m421
"Silicon Power Transistors"
T8480
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2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
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L4H7414
NE416
for23
2SC2407 equivalent
2SC2407
NC921
nec 2561 equivalent
2SC1592
NE41607
2sc1949
2SC1426 equivalent
nec 2561 le
NE41600
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BDT88
Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.
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BDT82;
BDT84
BDT86;
BDT88
T-31-23
T0-220
BDT81,
BDT83,
BDT85
BDT87.
BDT88
BDT81
BDT82
BDT83
BDT86
BDT87
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