t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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n2200n3300n4200n4700+6n5600t3d 66t3d 64737 s1gt3d 29t3d 90
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T3D DIODE
Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns
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0003b27tmpd459tmpd914tmpd2835+16tmpd2836tmpd2837tmpd2838tmpd4148tmpd4150tmpd4153t3d diodet3d 45 diodediode t3ddiode t3d 25t3d 40 diodediode t3d 08t3d 18 diodet3d 77 diodediode t3d 30diode t3d 35
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2sd1047 equivalent
Abstract: 2sb817 equivalent T3D 59 T3D 90 STK3042 stk3062 Sanyo STK 2SB631 T3D 47 STK3102
Contextual Info: SANYO SEMICONDUCTOR CORP b3E D m 7 tlci707b OOllltH GTH TSAJ S T K Audio Power Amplifier STK3042 IH Series ★ 2 c h . / 1 package, ± Power Supply ★ V o l t a g e Amp I if ier ★ T H D = 0. 005% Maximum Ratings Recommended Operating Conditions m Mode 1
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stk304220khzstk3042histk3062n+15stk3082iestk3102distk3122mstk3152ihmanuf01-w\i2sd8942sd1047 equivalent2sb817 equivalentt3d 59t3d 90stk3062sanyo stk2sb631t3d 47stk3102
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Contextual Info: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR BIPOLAR POWER TRANSISTORS NPN, TO-257 SHD4261 SHD4262 CONTIN. COLLECT. CURRENT COLLECT. TO EMITTER VOLTAGE COLLECT. TO BASE VOLTAGE EMITTER TO BASE VOLTAGE VCEO v CBO v EBO Volts Volts Volts Amps 80 80
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o-257shd4261shd42622n3421+42n63012n37412n61932n3721
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Contextual Info: For use with pin headers shown on pages F8 to FI 2. Can be fitted and removed by hand. An alternative on-board programming method to DIL switches. Open top for test probe. Choice of plating finish. PITCH J u m p e r S o c k e t O p e n Top 2mm M22 C onnectors
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m22-30160lill4m22-218m22-216+5m22-21m22-542m22-634m22-636m22-201
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T3D 77
Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Contextual Info: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e
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om7612nmlm137hv534-5776faxt3d 77+2adjustable negative voltage regulator 50vt3d 42
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T3D 34
Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Contextual Info: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in
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n15001b11r17t3d 34t3d 67+8t3d 87t3d 99t3d 79t3d 96t3d 64t3d 63tusonixu1g 007
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T3D 34
Contextual Info: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high
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T3D 54 DIODE
Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Contextual Info: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbsbt31002cm50buk453-100abuk453-1oob+13buk453-100a-100bt3d 54 diodediode t3d 56diode t3d 24t3d 75 diodet3d 77 diodet3d 01 diodet3d 55 diodediode t3d 54t3d 20 diodet3d+54+diode
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3dfx
Abstract: AT3D 3Dfx Interactive promotion 6422 dac374 Alliance ProMotion 6422
Contextual Info: 3D BH P r o M o tio n - A T JD A Integrated I 28-hit M M U1 A m -lcraior HrnMoi iun-ATJD Introduction Features Block diagram ❖ Fast 3D rendering - F ull h a rd w a re s e tu p - O n -c h ip D 3 D te x tu re p a le tte 3 D fx D ual d o i k THP g e n e ra to r
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Marking 3D TO-236AB
Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
Contextual Info: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky
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bar18bas16bas19bas21+11bav701238bmm23881nmarking 3d to-236abt3d 87pro-electront3d zenerzener a12t3d 91t3d 96t3d 77
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Contextual Info: m h m MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 R evised 1-96 CST-100 Shrouded Headers— Straight and Right Angle M aterial and Finish Right Angle .0 2 5 [0 .6 4 ] Square Straight Post (.0 2 5 [0 .6 4 ] Square)
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T3D 62
Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Contextual Info: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator
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at-41400rn/50mm475flm0017be3+1017l24t3d 62t3d 98t3d 87at-41400-gp4t3d 54chip die npn transistort3d 69t3d 83t3d 66
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T3D DIODE
Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are
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ITT 7400
Abstract: OZ 9906
Contextual Info: CHDII H igh Density PCB C onnectors The Cannon High Density CHDII connector series Typically, the pin side of the connector is mounted supports the high I/O signals required on today's on the backplane utilizing press-fit compliant pin printed circuit boards.
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GR42-6
Abstract: 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K
Contextual Info: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-4 This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor
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c02e-4c02e4grm33grm36ygrm44-1+12grm39ygrm44-1grm40-024gr42-62j 103kgr43-2ghm3145ghm3045rr 102k 2kvrr 681k- 1kv capacitorgrm42-6rr 471k 1kvgrm40b103k
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Contextual Info: O K I electronic components KGF1191_ Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1191 is a tw o-stage small-signal am plifier, w ith frequencies ranging from the UHF band to the L band, that features low voltage operation, low -current dissipation, high gain, and high
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Contextual Info: MITSUBISHI LSIs 1996.6.11 MÇM5V4R08 J-10,-12,-15 PRELIM I N A R Y Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R0SJ is a family o f 524288-word by 8-bit static
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GRM230Y5V475Z16
Abstract: GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145
Contextual Info: This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-5 This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor
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c02e-5c02e5grm33grm36ygrm44-1+13grm39ygrm44-1grm36-019gr36ygr44-1grm230y5v475z16gr42-6hr r 681k- 1kvgr40 muratahr r 221k 2kvgr42-2grh110ghm1540ghm2143 b 473 m ac250 ptghm3145
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t127b
Abstract: t2d t3d t122 25 10 Diode T3D 57 440MX 82440MX t127 Diode T3D 54 T122 T3D 62
Contextual Info: Intel 440MX Chipset Electrical and Thermal Specification Datasheet Addendum Product Features • ■ ■ ■ ■ Processor Host Bus Support — Optimized for these 100 MHz or 66 MHz processors: − Mobile Intel® Pentium® III Processor − Intel®Pentium III Processor – Low Power
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KT266
Abstract: T3D 43 diode CY28326 CY28354 CY28354-400 ILB1206 KTT880 2726G
Contextual Info: CY28354-400 210 MHz 24 Output Buffer for 4-DDR DIMMS for VIA Chipsets Support Features Functional Description • Supports VIA PRO 266, KT266 and P4x266 The CY28354-400 is a 2.5V buffer designed to distribute high-speed clocks in PC applications. The part has 24 outputs
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cy28354-400kt266p4x266cy28326+8ptt880ktt88012-output266-mhzt3d 43 diodecy28354ilb12062726g
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KT266
Abstract: CY28326 CY28354 CY28354-400 ILB1206 KTT880
Contextual Info: CY28354-400 210 MHz 24 Output Buffer for 4-DDR DIMMS for VIA Chipsets Support Features Functional Description • Supports VIA PRO 266, KT266 and P4x266 The CY28354-400 is a 2.5V buffer designed to distribute high-speed clocks in PC applications. The part has 24 outputs
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Contextual Info: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum
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Contextual Info: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically
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