T3D 66 Search Results

T3D 55

Abstract: 07E-07
Contextual Info: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

T3D 77

Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Contextual Info: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e

T3D 34

Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Contextual Info: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec­ trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in

T3D 35 zener DIODE

Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Contextual Info: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)

sprague MPSA05

Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

t127b

Abstract: t2d t3d t122 25 10 Diode T3D 57 440MX 82440MX t127 Diode T3D 54 T122 T3D 62
Contextual Info: Intel 440MX Chipset Electrical and Thermal Specification Datasheet Addendum Product Features • ■ ■ ■ ■ Processor Host Bus Support — Optimized for these 100 MHz or 66 MHz processors: − Mobile Intel® Pentium® III Processor − Intel®Pentium III Processor – Low Power

Contextual Info: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

Contextual Info: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C

Contextual Info: Round Conductor, Flat Cable, IDC Connectors 2.54 x 2.54 m m 0.100 x 0.100 in. Description Quickie IDC Backplane Receptacle (0.275 in.) THIS CONFIGURATION FOR ODD POSITIONS ONLY SEE DETAIL - s- LEFT ASSEMBLY 2.54 mm (0.100 in.) HHKM SCM glKKlRlKiaiaiaHBg

t3d diode

Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Contextual Info: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

T55B

Abstract: T71A t19c t17c t61b t58b t57b T27b t65a T3D 62
Contextual Info: 82371AB PCI ISA IDE Xcelerator PIIX4 23.0 Clock, Reset, ISA Bus, X-Bus, and Host Timing Diagrams Figure 41. Clock Timing Period High Time PCICLK, SYSCLK, OSC 2.0V 0.8V Low Time Fall Time Rise Time Figure 42. Reset Inactive Timing SUS_STAT[1:2]# t2f PCIRST#, RSTDRV

THC3501

Abstract: THC3564 BBC DSA 22 THC3694
Contextual Info: S P R A G U E / S E N IC O N D ^ I GROUP D • ÛS13Û50 GQOBSbü ' 8514019 SPRAGUE! SEMICONDS / I C S 930 ' 03560J Y 7 ■ ' 1- | - —, . -■ —- — - BIPOLAR TRANSISTOR CHIPS ' 1 iI II NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

MPS3708C

Contextual Info: SPRAGUE/SEMICOND GROUP 851 40 19 SPRAGUE, ^ D • 0513Û5Q 0GÜ35L.5 b ■ S E M I C O N D S / ICS 93D 0 3 5 6 5 ^ T 'c L '7 - 'Cf û BIPOLAR TRANSISTOR CHIPS | i ! NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: m h m MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 R evised 1-96 CST-100 Shrouded Headers— Straight and Right Angle M aterial and Finish Right Angle .0 2 5 [0 .6 4 ] Square Straight Post (.0 2 5 [0 .6 4 ] Square)

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
Contextual Info: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance

T3D 62

Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Contextual Info: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator

T3D 29 zener DIODE

Abstract: diode zener t3d 23 T3D 67 diode T3D 58 diode T3D zener DIODE T3D 83 DIODE T3D 81 DIODE T3D 98 diode Diode T3D 57 Diode T3D 81
Contextual Info: SPRAGUE/SEMICOND 85 14 01 9 SPRAGUE. GROU P TB D • Ô513ÔSG S E M I C O N D S / ICS ÜQD3bEG T ■ 93 D 0 3 6 2 0 T ~ t f ~ Q t t DIODE CHIPS / ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C

AB028V1-14

Abstract: DDD4733 S443 CuMoCu
Contextual Info: EBAlpha 23-30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain 0.235 5.60 m m ■ 30 dB Attenuation Range 1 0.008 - (0.20 m m ) 0.225 ■ +16 dBm Output Power J (5.72 m m ) 0.450 ■ 3 dB Noise Figure ^ . 1 (11.43 m m ) 0.024 (0.61 m m ) ■ Rugged, Reliable Package

COMPENSATING CAPACITORS N750

Abstract: T3D 53 T3D 64 T3D 42 t3d 66 Tusonix T3D 34 T3D 38 T3D 69 T3D 63
Contextual Info: ESE D TUSONIX INC • For Temperature Compensation — T U S O N IX Tem ­ perature Compensating Capacitors are capacitance sensitive to temperature in predetermined degrees de­ pending upon the ceramic dielectric used. Because of this controlled and predictable characteristic, they

T3D 46 diode

Abstract: Diode T3D 54 T3D 53 diode Diode T3D 55 T3D 47 T3D 53 T3D 43 diode T3D 46 T3D 34 diode T3D 55 diode
Contextual Info: PRELIMINARY CY28258 Memory Clock Buffer for 3 DDR and 2 SDRAM DIMMS Features Functional Description • One input to 26 output buffer/driver • Supports up to 3 DDR and 2 SDRAM DIMMS • One additional output for feedback • SMBus interface for individual output control

CYW256OXCT

Abstract: DDR 333 CYW256OXC ILB1206 W256 W256H W256HT w250
Contextual Info: W256 12 Output Buffer for 2 DDR and 3 SRAM DIMMS Features Functional Description • One input to 12 output buffer/drivers • Supports up to 2 DDR DIMMs or 3 SDRAM DIMMS • One additional output for feedback • SMBus interface for individual output control