T35 DIODE Search Results

TANTALUM capacitor 685 35K

Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
Contextual Info: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500

a564 transistor

Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
Contextual Info: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300

106 16k

Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

transistor a564

Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

BZX46

Abstract: BZX46C30
Contextual Info: I T T fl7 SEMICONDUCTORS dE I MbflM'lSS 000E33E □ | -r « ZENER DIODES BZX46 Series 500 mW Glass Zener Diodes in DO-35 Package Ta = 25 °C Type BZX46-C2V7 BZX46-C3V0 BZX46-C3V3 BZX46-C3V6 BZX46-C3V9 BZX46-C4V3 BZX46-C4V7 BZX46-C5V1 BZX46-C5V6 BZX46-C6V2

T35 diode

Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
Contextual Info: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted

1N5426

Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
Contextual Info: SWITCHING DIODES 200mW Part* Peak Voltage Continous Reverse Current L NA V <V> R W 1N914 1N914A 1N914B 100 100 100 @ Forward Voltage V„(V) V (V) F 5000 @ 75 5000 @ 75 5000 @ 75 1.0 1.0 1.0 @ Capacitance C Maximum L (MA) Reverse Recovery Time (PF) F @ 10

Silicon Schottky Diode sod123

Abstract: SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6
Contextual Info: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAT56 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT continuous reverse voltage 60 V If continuous forward current 30 mA vF forward voltage

C82 diode

Abstract: marking T34 DZ89-C5V1 DZ89-C18 s5 89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V6 DZ89-C6V2
Contextual Info: DUAL ZENER DIODES ITT SEtllC O N D/ INTERM ETALL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.

Contextual Info: FAST RECOVERY DIODE C16T10F C16T20F C16T20F-11A 17.7A/100~ 200V/trr : 35nsec 4.8U89 . 1.4 .055) . I.2(.047) °¡SQUARE - PAK| TO-263AB (SMD) Packaged in 24mm Tape and Reel : C16T»«F o Dual Diodes — Cathode Common o Ultra - Fast Recovery 1.4C055) I 1.W.63Ô)

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

marking T28

Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
Contextual Info: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

Contextual Info: • 12.8 VOLT NOMINAL ZENER VOLTAGE 4 5=<•. 1N4896 ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru • LOW NOISE 1N4915A • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Tem perature: -65°C to +175°C

M49C

Abstract: diodes 1N49A 17atm 1n4907 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A
Contextual Info: • 12.8 VOLT NOMINAL ZENER VOLTAGE •+ 5=c 1N 4896 thru ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N 4915A • LOW NOISE • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

byv31

Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Contextual Info: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

1N5426

Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

Contextual Info: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor

89a mark code smd

Abstract: C15 DO-34 zener smd marking 183 DZ89-C9V1 C6V2 ST SMD marking code 55A mark code T18 Zener diode smd marking e2 DZ89-C3V9 DZ89-C4V7
Contextual Info: DUAL ZENER DIODES IT T S E tllC O N D / IN T E R M E T A LL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.

Laser SDL 980

Abstract: Laser SDL
Contextual Info: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

BZD23

Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Contextual Info: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200