C510 Search Results

Contextual Info: Standard Tantalum Capacitors Type TYTS Series Product Specifications Type TYTS Series Product Specifications Test Conditions JIS C5101-3 1998 Operating Temperature Range: -55°C ~ +125°C Rated Voltage: DC4 ~ 50V 85°C Surge Voltage: DC5 ~ 65V 85°C Derated Voltage:

c 337 25

Abstract: G6820 C5101-1
Contextual Info: Surface Mount Aluminum Electrolytic Capacitors Type TYEV 85°C Series Characteristics Electrical Type TYEV Series Test Conditions JIS C5101-1,-18 Operating Temp. Range -40°C ~ +85°C Rated Voltage DC 6.3 ~ 50V — 85°C Capacitance 0.1 ~ 1000µF 85°C Capacitance Tolerance

g4018

Abstract: d2024 476 10k 06E25 2D226
Contextual Info: Radial Leaded Aluminum Electrolytic Capacitors Type TYRL Long Life Series Characteristics Electrical Type TYRL Series Test Conditions JIS C5101-4 Operating Temp. Range -40°C ~ +105°C -25°C ~ +105°C, 450V — Rated Voltage DC 200 ~ 450V 105°C Capacitance

C5101-1

Abstract: TYEH1V337H10MTR 476 10K F5522 H1010
Contextual Info: Surface Mount Aluminum Electrolytic Capacitors Type TYEH 105°C Series Characteristics Electrical Type TYEH Series Test Conditions JIS C5101-1,-18 Operating Temp. Range -40°C ~ +105°C — Rated Voltage DC 6.3 ~ 100V 105°C Capacitance 0.1 ~ 1000µF 105°C

lt1085 linear

Abstract: C51012-1 LT1085-5 Positive Voltage Regulator series voltage regulator using transistors EL7551C EL7556BC EL7562CM EL7564CM LT1083
Contextual Info: 12. Designing with 1.5-V Devices C51012-1.3 Introduction The Cyclone FPGA family provides the best solution for high-volume, cost-sensitive applications. A Cyclone device is fabricated on a leadingedge 1.5-V, 0.13-µm, all-layer copper SRAM process. Using a 1.5-V operating voltage provides the following advantages:

DDR pin out

Abstract: double data rate ddr schematic
Contextual Info: 10. Implementing Double Data Rate I/O Signaling in Cyclone Devices C51010-1.2 Introduction Double data rate DDR transmission is used in many applications where fast data transmission is needed, such as memory access and first-in first-out (FIFO) memory structures. DDR uses both edges of a clock to

logic diagram to setup adder and subtractor

Abstract: EP1C12
Contextual Info: 2. Cyclone Architecture C51002-1.6 Functional Description Cyclone devices contain a two-dimensional row- and column-based architecture to implement custom logic. Column and row interconnects of varying speeds provide signal interconnects between LABs and

EPCS16SI8N

Abstract: EPCS128 EPCS64SI16N EPCS16 EPCS 16 soic EPCS4 EPCS64 h5800 pin information ep3c5 EPCS1SI8N CG-250
Contextual Info: 14. Serial Configuration Devices EPCS1, EPCS4, EPCS16, EPCS64, and EPCS128 Data Sheet C51014-3.1 Introduction The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Altera Corporation May 2008

EPCS64SI16N

Abstract: h2a0000 EPCS4SI8N EPCS16 EP2C20 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: 4. Serial Configuration Devices EPCS1, EPCS4, EPCS16, & EPCS64 Features C51014-1.6 Introduction The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Functional Description Altera Corporation

altera cyclone 3

Abstract: C51011-1 SSTL-3
Contextual Info: 11. Using Cyclone Devices in Multiple-Voltage Systems C51011-1.3 Introduction To meet the demand for higher system speed in data communications, semiconductor vendors use increasingly advanced processing technologies requiring lower operating voltages. As a result, printed

lt1085 linear

Abstract: MOTOROLA linear handbook linear switching voltage regulator handbook series voltage regulator using transistors LT1084-5 motorola voltage regulator Adjustable Positive Voltage Regulator 8.0V to 2 C51012-1 CMOS applications handbook LT1649
Contextual Info: 14. Designing with 1.5-V Devices C51012-1.1 Introduction The CycloneTM FPGA family provides the best solution for high-volume, cost-sensitive applications. Stratix and Cyclone devices are fabricated on a leading-edge 1.5-V, 0.13-µm, all-layer copper SRAM process.

epcs16si8n

Abstract: C51014-3 EPCS128SI16N 56FFFF EPCS64 EPCS1SI8N CG-250
Contextual Info: 4. Serial Configuration Devices EPCS1, EPCS4, EPCS16, EPCS64, and EPCS128 Data Sheet C51014-3.0 Introduction The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Altera Corporation August 2007

ATWQ

Abstract: 1192 C5101
Contextual Info: 東信工業 株 ELECTROLYTIC CAPACITORS ● Low Impedance TYPE ● 低インピーダンス ATWQ シリ–ズ ! 特 " " パーソナルコンピュータに適当です。 高周波インピーダンスを低減し,高リプルを実 現. ! TYPE ATWQ JIS C5101

BYTEBLASTER

Contextual Info: 14. Serial Configuration Devices EPCS1 & EPCS4 Data Sheet C51014-1.1 Features The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1- and 4-Mbit flash memory devices that serially configure CycloneTM

C5101

Abstract: toshin KOGYO
Contextual Info: 東信工業 株 ELECTROLYTIC CAPACITORS ● Low Impedance LONG LIFE TYPE ● 低インピーダンス長寿命 ATWT シリ–ズ TYPE ATWT JIS C5101 JIS C5101 CE-04 (耐洗浄品) CE-04 (Washable product) ! 特 " 105°C，2,000~5,000 時間保証の Low Impedance 長

molex 8981

Abstract: C51000
Contextual Info: , 8 9 8 1-4V SDA DWG- N0FILE S898I4V.D G N CAD NOs 15-24-4049 1.63 .064 NOTES: PART INTENDED FOR USE WITH PLUG P N : 8 9 8 M P PRODUCT S P E C .8981 APPLIES & 898I-4P2 EDP 1. 2. MATERIAL ; HOUSING s NYLON, TYPE 6 / 6 . 94V-2, COLOR NATURAL TERMINAL : PHOSPHOR B R O N ZE,C51000

Contextual Info: INTERCONNECT PINS: PRODUCT APPLICATION GUIDE ^ User Defined Products Example 2 See Cross sections Pin Type Pin PartPrefix "-s. Pin Size- .500" Overall Length 1 _ 8-253F5040 ^ PART NUMBER page 16 I .400 Above Board Dimension C51000 Base Material with Tin Lead Plating

EPCS 16 soic

Abstract: H12F SRUNNER EPCS1SI8N CG-250
Contextual Info: Serial Configuration EPCS Devices Datasheet C51014-4.0 Datasheet This datasheet describes serial configuration (EPCS) devices. Supported Devices Table 1 lists the supported Altera  EPCS devices. Table 1. Altera EPCS Devices Memory Size (bits) On-Chip

jtag pin

Abstract: PQFP ALTERA 160 EP1C12
Contextual Info: 1. Introduction C51001-1.4 Introduction The Cyclone field programmable gate array family is based on a 1.5-V, 0.13- m, all-layer copper SRAM process, with densities up to 20,060 logic elements LEs and up to 288 Kbits of RAM. With features like phaselocked loops (PLLs) for clocking and a dedicated double data rate (DDR)

EP1C3

Abstract: EP1C12
Contextual Info: 4. DC & Switching Characteristics C51004-1.6 Operating Conditions Cyclone devices are offered in both commercial, industrial, and extended temperature grades. However, industrial-grade and extendedtemperature-grade devices may have limited speed-grade availability.

EPCS4SI8N

Abstract: EPCS16SI16N EPCS16 EPCS64SI16N EP2S15 EP2S180 EP2S30 EP2S60 EP2S90 EPC16
Contextual Info: Chapter 4. Serial Configuration Devices EPCS1, EPCS4, EPCS16 & EPCS64 Data Sheet C51014-2.0 Features The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Functional Description Altera Corporation

Contextual Info: TANTALUM ELECTROLYTIC CAPACITORS TNC Series High Performance Polymer type Chip Tantalum Capacitors Product specifications Test conditions JIS C5101-1:1998 TNC Features • This type reduces ESR by using high performance polymer based on our original manufacturing process.

C5101

Abstract: L142 V7-5S18E9-000-1 micro switch 91929
Contextual Info: SWITCH - a Honeywell Division FED.M FG .CO DE BASIC L I ST ING V 7 -5 S 1 8 E 9 -0 0 0 -1 CW-C5101 9 I 929 [ r e l e a s e 1 OF 1 N o .p p _ 2 2 3 9 7 I r e p l a T es X100596— V7 _ ^ _ _ | MICRO SWITCH .796*.010 |, WI |PAGE V 7 -5 S 1 8 E 9 -0 0 0 -1

G5102

Contextual Info: * f» m m * •a _JL_ -2 5 -+ 8 5 T : Y5P« f i » - 3 0 - +85X: JIS C5I02 7 . 8 lf f t : ¿ t ; * T * M. Jf : 20TC(Y5 P * M i u 2$TC) m m & : i ± o l 2khz * M & n .JE : 5 VITTS ß T m W (D.F.) Mn Mn ZM, xw Ö Yîsr î.O tfW T L S ttW T JIS C5102 7 . 9 » C J : ^ ± t