T0-202
Abstract: 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1
Contextual Info: hfl E S L S G 1 1 3 D 0 0 3 ^ 5 3 ^ T33 NATL S E M I C O N D VcEO sutt (Volts) Min Device NPN PNP lc Cant (Am ps) Max I1« I g VcE(iat)® le Min M ax (Am ps) 60 180 0.02 (Volts) M ax (Am ps) h (D I S C R E T E ) P D (A m l» p O(Casa) MHz M in (Watts)
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OCR Scan
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D40N2
T0-202
D40C1
D40C4
D40C5
D40C7
045H5
d4104
T0202
D40C4
D40C7
d44c8
D41D5
D40C5
D40C1
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PDF
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1401-1407
Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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OCR Scan
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NPN110.
500kSA
MT14a
2SD222t
2SD223t
2SD224t
TRL2015
20MSA
TRL2255S
20M5A
1401-1407
2N1423
MT1836
2SC1005
2N5577
2N5579
MD38
MT49
STC3741
2sc999
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PDF
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2N725
Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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OCR Scan
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NPN110.
B170024
4000n
2N725
L51A
BSV20A
DM-58
2N625
BSX86
fr 153/30 r
T072
UC340
UC803
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PDF
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BD436 cross reference
Abstract: BD434 BD436-25 BD439 BD433 BD435 BD436 BD437 BD438 BD440
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTE RNA TI ONA L DESCRIPTION SbE D • 7 1 1 G fl2 b O O M E T lb Ö T2 ■ P H IN QUICK REFERENCE DATA SYMBOL -VcES PINNING - TO-126 SOT32 “ VoEO DESCRIPTION
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OCR Scan
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D434/436/438/440/442
aTO-126
BD433,
BD435,
BD437,
BD439
BD441
O-126
711DflSb
BD434
BD436 cross reference
BD434
BD436-25
BD433
BD435
BD436
BD437
BD438
BD440
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PDF
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fa08a
Abstract: VS-2500 transistor 902 E113A FT45
Contextual Info: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation
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OCR Scan
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curreT-33-13
T-33-13
002TM2b
fa08a
VS-2500
transistor 902
E113A
FT45
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PDF
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10A 600 VOLT DIODE
Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Contextual Info: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes
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OCR Scan
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72T4b21
T-33-35
KE724S0110
T-33-
KE72450110
10A 600 VOLT DIODE
transistor 13a 600v
westinghouse DIODES
827 d transistor
KE72
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PDF
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K1502
Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
B170024
4000n
K1502
Transistors 2n551
transistor k1502
BFX82
AN L61C
2N3113
RN1030
P1027
T03A
MT101B
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PDF
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transistors bu 407
Abstract: Transistors BD 330 bdx 330
Contextual Info: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •
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OCR Scan
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cltI17Bt.
003titi3S
BU406,
BU407
10-Degree
transistors bu 407
Transistors BD 330
bdx 330
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PDF
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NKT 275 transistor
Abstract: 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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OCR Scan
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NPN110.
buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
NKT 275 transistor
2sc5250 transistor
2N5577
2N5579
MD38
S2000
2SD223
1401-0405
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PDF
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bus48
Abstract: t335 motorola bus48
Contextual Info: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE |b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)
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OCR Scan
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PDF
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2SC3000
Contextual Info: 2SC3000 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol 1. Rating 1.BASE 2.EMITTER 3.COLLECTOR Unit 2.4 1.3 Vcbo 30
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Original
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2SC3000
1100MHz
100uA
062in
2SC3000
300uS
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PDF
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2N6678 motorola
Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Contextual Info: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are
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OCR Scan
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T-33-13
2IM6648
2N6676
2N6677
2N6678
MJH6676
MJH6677
MJH6678
2N6676,
2N6677,
2N6678 motorola
Motorola 3-252
ca3725
Motorola Transistor 3-252
JH transistor
6676 transistor
Motorola 3-252 to-3
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PDF
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T1P110
Abstract: T1P112 00104 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: PANASONIC INDL/ELEK -CIO [□*132052 DDIOMBI a 12E D Darlington Silicon NPN Power Transistors TO-220 Package T-33 Absolute Maximum Ratings Ta=25°C Kern Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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OCR Scan
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O-220
TIP112
TIP115,
TIP116,
TIP117
25mJcs
T1P110
T1P112
00104
TIP111
TIP115
TIP116
TIP117
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PDF
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welding machine wiring diagram
Abstract: g9sx-BC202 hot air gun fan controller circuit G9SX-AD322-T15 g9sx-bc 24vdc motor forward reverse control diagram s34 zener diode varistor S14 k1 circuit diagram of door interlock system en61558
Contextual Info: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. ■ Solid-state outputs excluding Expansion Units . ■ Detailed LED indications enable easy diagnosis. ■ TÜV Product Service certification for compliance
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Original
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IEC/EN61508
EN954-1
welding machine wiring diagram
g9sx-BC202
hot air gun fan controller circuit
G9SX-AD322-T15
g9sx-bc
24vdc motor forward reverse control diagram
s34 zener diode
varistor S14 k1
circuit diagram of door interlock system
en61558
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PDF
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TIPL763A
Abstract: TIPL763
Contextual Info: bS TE XA S IN S T R -COPTO} _ ' 896 17 26 TEXAS INSTR OPTO DE |flThl7ati 0 0 3 7 0 ^ — 62C 37069 D TIPL763, TIPL763A N-P-N SILICON POWER TRANSISTORS T~ OCTOBER 1982 - REVISED O CTOBER 1984 • Rugged Triple-Diffused Planar Construction •
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OCR Scan
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TIPL763,
TIPL763A
IPL763
TIPL763A
O-218AA
0D37D7t,
TIPL763
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PDF
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NEC D 586
Abstract: 2SC4182
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIALTRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in m illim eters TV tuners. Super mini mold package makes it suitable for use in small
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OCR Scan
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2SC4182
2SC4182
NEC D 586
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PDF
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BDT81F
Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136
Contextual Info: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.
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OCR Scan
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BDT82F;
BDT84F
BDT86F;
BDT88F
711002b
T-33-/?
OT186
BDT81F,
BDT83F,
BDT85F
BDT81F
BDT82F
BDT83F
BDT86F
BDT87F
BDT88F
MAX2136
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PDF
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pn5114
Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max
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OCR Scan
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QQ15bqa
PN4091
PN4092
PN4093
2N3382
2N5018
2N5019
RS-468)
pn5114
PN5432
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PDF
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2SC76
Abstract: 2n1781 2n725 L51A T03A 2SC175 2SC176 2SC177 2SC73 2SC75
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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B170024
4000n
2SC76
2n1781
2n725
L51A
T03A
2SC175
2SC176
2SC177
2SC73
2SC75
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PDF
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2N2426
Abstract: 2SD128 BSV20A 2n1585 2N625 2SD128 transistor bsv34 2n725 GT167 NS1110
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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B170024
4000n
2N2426
2SD128
BSV20A
2n1585
2N625
2SD128 transistor
bsv34
2n725
GT167
NS1110
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PDF
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Westinghouse diode
Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
Contextual Info: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max
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OCR Scan
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T-33-35
KS8245A110
75T4b21
KS8245A110
Westinghouse diode
KS8245A1
WESTINGHOUSE dc motor
Westinghouse power diode
S-8245
WESTINGHOUSE ELECTRIC
westinghouse ac motor
ks82
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PDF
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PQC5001T
Abstract: PPC5001T FO-102
Contextual Info: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.
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OCR Scan
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PPC5001T
PQC5001T
711002b
00Mb422
PPC5001T
PQC5001T
T-33-05
711065b
FO-102
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PDF
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din en iso 13855
Abstract: welding machine wiring diagram manual welding machine wiring diagram OMRON plc programming manual iron EI core IEC/EN 60947-5-1 G9SX-BC202 IEC 60947-5-1 limit switch KM A1 G9SX-GS226-T15-RC hot air gun fan controller circuit
Contextual Info: Safety Guard Switching Unit G9SX-GS A Safety Measure for Hazardous Operations That Does Not Lower Productivity • Two functions support two types of application: x Auto switching: For applications where operators work together with machines x Manual switching: For applications with limited operations
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Original
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PDF
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BDS201
Abstract: BDS77 BDS203 MSB002
Contextual Info: PHILIPS INTERNA TI ON AL SbE Philips Components status Product specification April 1991 B 7110fl2ti Q 0 4 3 1 3 4 45fl • P H I N T-33 -o s BDS201/203/77 Data sheet date o f issue D NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223
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OCR Scan
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7110fl2t
D043134
BDS201/203/77
T-33-os-
OT223)
BDS202/204/78.
BDS201
BDS203
BDS77
MSB002
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PDF
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