T2D DIODE
Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Contextual Info: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD
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q62702-a732eha070gido-35fl235bos+13f-100fi53sbds00bb5b5t2d diodet2d 70 diodet2d 40 diodet2d 65 diodediode t2dt2d 03 diodet2d 09 diodet2d 75 diodediode t2d 05t2d diode 06
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zener 1B7
Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
Contextual Info: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage
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500-mw1n52231n52581n5223a+131n5258a1n5223b1n5258b1n52511n52521n5253zener 1b7125c79hitachi suffixhitachi "v suffixin5223b1n52261n5224
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T2D DIODE
Abstract: T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode RFN16
Contextual Info: RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5
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rfn16t2do-220rfn16o220fn+9r1120at2d diodet2d 16 diodet2d diode 25diode t2d 05jc-115t2d 80 diodediode t2d 80t2d 30 diode
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t2d diode
Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
Contextual Info: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2
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rfn20t2do-220rfn20o220fn+9r1120at2d diodet2d 80 diodet2d 40 diodet2d 80_ dioderfn20 diodediode t2d 05t2d diode 60rfn-20
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T2D DIODE
Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
Contextual Info: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①
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rfn10t2drfn10o-220o220fn+9r1120at2d dioderfn-10t2d 40 diodet2d 6 n diodet2d 75 diodet2d 8 diodet2d 80t2d 1 diode
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T2D 40 DIODE
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)
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aec-q101rfn20t2dfho-220rfn20+3o220fnr1120at2d 40 diode
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T2D diode
Abstract: diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D
Contextual Info: Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN
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rfn16t2do-220rfn16o220fn+10r1120at2d diodediode t2dt2d 16 diodet2d 80 diodet2d diode 60t2d diode 25t2d 80_ diodediode t2d 05diode t2d 80
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RFN-10
Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
Contextual Info: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10
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rfn10t2drfn10o-220o220fn+10r1120arfn-10t2d diodet2d 14 dioderfn10 diodet2d 40 diodet2d 6 diodet2d 75 diodet2d 8 diodet2d 6 n diode
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T2D DIODE
Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2
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aec-q101rfn10t2dfhrfn10o-220+7o220fnr1120at2d diodet2d diode 02t2d 80_ diodet2d diode 16t2d 80 diode
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T2D diode
Abstract: T2D 80 diode RFN20 RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05
Contextual Info: RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF
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rfn20t2do-220rfn20o220fn+9r1120at2d diodet2d 80 dioderfn20 diodet2d diode 60t2d 09 diodet2d 40 diodet2d 80_ diodediode t2d 05
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T2D DIODE
Abstract: T2D DIODE 02
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2
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aec-q101rfn16t2dfhrfn16o-220+4o220fnr1120at2d diodet2d diode 02
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T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
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2sk2645-01mro-220f15t2d 62 diodet2d 98 diode+2t2d 70 diodet2d 27 diode
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T2D 22 diode
Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA
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bdt60bdt60bbdt61bdt61a+7bdt61bbdt61ct2d 22 diodet2d 56 diodet2d diodediode t2d 05t2d 70 diode
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T2D 85 diode
Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V
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irls510ao-220f71b4m2d3t23b+8t2d 85 diodet2d 65 diodet2d diodet2d 54 diodet2d 8 diodet2d diode 45t2d 09 diode23/zener diode t2d 54
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T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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ndt455not-223t2d 24 diodet2d 43 diode+6t2d 65 diodet2d 61 diodet2d diode 42t2d diode 32t2d 04 diodediode t2d
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T2D 96 diode
Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Contextual Info: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION
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m54hc365/366m74hc365/366hc365hc366+11m54/74hharacteristicst2d 96 diodet2d 78 diodet2d 44 diodet2d 76 diode valuet2d diode 29t2d diodet2d 36 diodet2d 19 diodet2d 53 diodet2d diode 96
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1n58171n8211n58181n821a+111n5819marking a4t sot23a1t sot233ft sot23ph c5v1transistor t04 sot23a4t sot23transistor marking codes a4psot23 marking a1ta6t sot23marking z2p
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T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ml65244ml65245ml65541100pf+9t2d 9574fct244dt2d 70 diodet2d diodessram 256kb 6nssignal path designert2d 83 diodetransistor t2dfct541
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UC1838
Contextual Info: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819marking a4t sot23ph c5v1t2d 79 diodec18 ph diodet2d diodetransistor marking codes a4p3ft sot23a1t sot23a4t sot23transistor t04 sot23
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829aphilips diode ph 33dph c5v1philips diode ph 33mphilips diode ph 33jph 33dph33dph33g33g ph diodeph 33gphilips diode ph 37m
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T2D 53
Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ml65244ml65245ml65541100pf+7t2d 53transistor t2ddiode t2dmips r400074fct244dt2d 83 diodefct541
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30PF
Abstract: DS3893A DS3893AV V20A
Contextual Info: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan
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ds3893atl/f/b69b-90q740bl30pf+2ds3893avv20a
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819philips diode ph 33dphilips diode ph 33jphilips diode ph 33mdiode c18 ph33g ph diodec18 pha6t sot23c33phph 33gt2d diode
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