zener 1B7
Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
Contextual Info: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage
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500-mw1n52231n52581n5223a+131n5258a1n5223b1n5258b1n52511n52521n5253zener 1b7125c79hitachi suffixhitachi "v suffixin5223b1n52261n5224
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westcode stud base diode SI 2
Abstract: 140ak
Contextual Info: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S
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pcn/pcr04070amperes2q49a5s-2710+3-b5rt175ccwestcode stud base diode si 2140ak
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T2D 85 diode
Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V
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irls510ao-220f71b4m2d3t23b+8t2d 85 diodet2d 65 diodet2d diodet2d 54 diodet2d 8 diodet2d diode 45t2d 09 diode23/zener diode t2d 54
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34B SOT
Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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ndt455not-223t2d 24 diodet2d 43 diode+6t2d 65 diodet2d 61 diodet2d diode 42t2d diode 32t2d 04 diodediode t2d
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T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ml65244ml65245ml65541100pf+9t2d 9574fct244dt2d 70 diodet2d diodessram 256kb 6nssignal path designert2d 83 diodetransistor t2dfct541
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T2D 53
Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ml65244ml65245ml65541100pf+7t2d 53transistor t2ddiode t2dmips r400074fct244dt2d 83 diodefct541
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T2D 70 diode
Abstract: T2D DIODE
Contextual Info: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State
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ltc1320rs422/rs562rs422rs562+4lt1054551fimbflt2d 70 diodet2d diode
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1n58171n8211n58181n821a+111n5819marking a4t sot23a1t sot233ft sot23ph c5v1transistor t04 sot23a4t sot23transistor marking codes a4psot23 marking a1ta6t sot23marking z2p
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diode t2d 77
Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
Contextual Info: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies
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mp7628mp7529bp7628diode t2d 77+9t2d 21 diodet2d 24 diodet2d 40 diodefbc 320 aba 4213t2d 80 diodet2d 09 diodet2d 27 diodediode t2d 80
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T2D 85 diode
Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
Contextual Info: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies
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mp7628t2d 85 diodefbc 320t2d 1 diode+4t2d 24 diodet2d 04 diodein t2d diodet2d 09 diode
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octal 548
Abstract: 5x2 connector header NX 38 HEADER 5X2 560pF T2D 87 diode t2d 68 chips t2d diode T2D T2D 26 diode
Contextual Info: LXD381 — Evaluation Board for Octal E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD381 — Evaluation Board for Octal E1 Applications User Guide. Order Number: 249213-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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lxd381560pftg-49-1505-nxoctal 548+85x2 connector headernx 38header 5x2t2d 87 diodet2d 68chips t2ddiode t2dt2d 26 diode
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829aphilips diode ph 33dph c5v1philips diode ph 33mphilips diode ph 33jph 33dph33dph33g33g ph diodeph 33gphilips diode ph 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819philips diode ph 33dphilips diode ph 33jphilips diode ph 33mdiode c18 ph33g ph diodec18 pha6t sot23c33phph 33gt2d diode
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MP7680JN
Contextual Info: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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T2d DIODE
Abstract: T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2d 86 diode T2D DIODE 49 T2D 83 DIODE T2D 84 diode T2D 87 diode T2D DIODE 42
Contextual Info: 5 4 3 2 1 D D RP19 2.7k INIT DONE C20 22uF Vcc3v3 1 2 J16 + + 1 3 2 1 3 4 C17 0.1uF RP36 2.7k C102 C103 C104 C105 C106 C107 C108 C109 C110 C111 C112 C113 C114 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 2 1 PGM INIT
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384mhzdesign\xrt86sh221\rev2\schematic\t86shxrt86sh221t2d diode+9t2d diode 48t2d 66 diodet2d diode 46t2d 86 diodet2d diode 49t2d 83 diodet2d 84 diodet2d 87 diodet2d diode 42
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T2D 24 DIODE
Abstract: T2d 43 diode
Contextual Info: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking
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mp768012-bit3455blfl3422bl6+3qdq741qt2d 24 diodet2d 43 diode
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HP5082-2835
Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Contextual Info: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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12-bitttl75mp768034b2bia+73425fcilfl00g77hp5082-2835mp7680jemp7680jnmp7680kemp7680kn
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digi20
Abstract: LM-0355MVWB
Contextual Info: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram
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T2D 44 diode
Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
Contextual Info: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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mp768012-bitttl7522bla+1200q7700g77t2d 44 diodet2d diode 44t2d diode 42t2d 03 diodet2d 37 diodet2d diode 43t2d 24 diodet2d diode 32t2d diodet2d 17 diode
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T2D DIODE 46
Abstract: T2D DIODE 48 T2D 87 diode T2D 82 diode T2d 86 diode T3D 54 DIODE t3d diode T2D DIODE T2D 66 diode T2D 83 DIODE
Contextual Info: XRT86SH221ES Rev 1.00 Voyager Lite Evaluation System User Manual XRT86SH221ES Evaluation System User Manual 1 XRT86SH221ES Rev 1.00 Voyager Lite Evaluation System User Manual TABLE OF CONTENTS SECTION 1
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xrt86sh221esxrt86sh221t2d diode 46t2d diode 48+8t2d 87 diodet2d 82 diodet2d 86 diodet3d 54 diodet3d diodet2d diodet2d 66 diodet2d 83 diode
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I8051
Abstract: Intel 8081 BN14 HEADER 10X2 T2D 17 67 74LS32 74LS221 74ls32 datasheet i8051 microcontroller diode t2d
Contextual Info: LXD386 — Evaluation Board for Quad T1/E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD386 — Evaluation Board for Quad T1/E1 Applications User Guide. Order Number: 249215-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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lxd386particularr65i8051intel 8081+8bn14header 10x2t2d 17 6774ls3274ls22174ls32 datasheeti8051 microcontrollerdiode t2d
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T2D DIODE
Abstract: T2d 86 diode T3D DIODE T2D 87 diode T2D DIODE 49 T2D DIODE 94 AK9 RJ12 transistor ad149 T2D 79 diode C1959
Contextual Info: 5 4 3 VIO 2 1 VCC3V3 C2 C1 + AD[31:0] 0.1uF 22uF B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 D VCC5V AD31 AD29 AD27 AD25 VCC3V3 AD21 AD19 VCC3V3 AD17 -CBE2 -IRDY VCC3V3 -DEVSEL -LOCK -PERR -SERR VCC3V3 -CBE1 AD14 VCC3V3 AD12 AD10 AD8 AD7 VCC3V3 AD5 AD3 AD1 VIO VCC5V
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pmead30led-1206projects\t86vsh328\schematic\t86vsh328schxrt86vsh328+10t2d diodet2d 86 diodet3d diodet2d 87 diodet2d diode 49t2d diode 94ak9 rj12transistor ad149t2d 79 diodec1959
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DIODE T3D 9D
Abstract: Diode T3D 7d P19Ab t2d 9d T2D 79 diode
Contextual Info: A dvance Inform ation This document contains information on a product under consideration. The parametric and functional information are target param eters and are for informational purposes only and are subject to change w ithout notice. Please consult Brooktree prior to designing with this part.
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bt464208-pingl464001diode t3d 9d+4diode t3d 7dp19abt2d 9dt2d 79 diode
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