T22T Search Results

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

TC59RM716GB

Abstract: 9T20T
Contextual Info: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications

RF TRANSISTOR 10GHZ

Abstract: 10GHz counters
Contextual Info: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector

DA30F

Abstract: TFR 600M
Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses

796310

Contextual Info: SP8853 1.3 GHz Professional Synthesiser Data Sheet VEE3 IC Cd LOCK DETECT 2 1 28 27 26 NC PD1 OUTPUT 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE

Transistor 502k

Contextual Info: SP8853A/B 1•3GHz Professional Synthesiser IC Cd LOCK DETECT 2 1 28 27 26 NC VEE3 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE 21 10 DATA 9 RF INPUT

DS3640

Abstract: Transistor 502k
Contextual Info: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

Contextual Info: %-n DC N NO. 20.Ma y . 1998 42065 b DATE iS. tic REV. o s o z E o n s 'ON ON IM VH 0 2 n M fi £ D E S C R I P T I ON R E V I S E D ${ El DR. M.ABE E N G L I S H & $ M APPD. m è CHK. T.OKAMURA S, i? AP P D . Vys rVvv^ ñam o vw V P A N E L PANE L C U T O U T S

SP8852E

Abstract: SP8854E SP8855E
Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

discrete phase sequence detector

Abstract: Transistor 502k
Contextual Info: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C

331029

Abstract: SP8852E
Contextual Info: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector

SP8852E

Abstract: SP8854E SP8855E 10GHz counters
Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

BUT12

Abstract: C-16 MT46V8M16 MT48LC4M16A2 25L128160
Contextual Info: ARM PrimeCell MultiPort Memory Controller PL175 Revision: r1p0 Technical Reference Manual Copyright 2002 ARM Limited. All rights reserved. ARM DDI 0230A ARM PrimeCell MultiPort Memory Controller (PL175) Technical Reference Manual Copyright © 2002 ARM Limited. All rights reserved.

Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

toshiba tlc 711

Abstract: RDRAM Clock T3D Toshiba
Contextual Info: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video

QT41T

Abstract: RDRAM Clock NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

DS3640

Abstract: discrete phase sequence detector phase sequence detector for three phase SL562 SP8861 phase sequence detector digital phase detector
Contextual Info: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C

single phase power factor improve circuit diagram

Abstract: SP8852E SP8854E SP8855E 10GHz counters
Contextual Info: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector

phase detector

Abstract: SP8852E SP8854E SP8855E Philips 10nF Capacitor 1000V
Contextual Info: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector

IDA45

Abstract: ecl book
Contextual Info: 256M/288M-bit RAMBUS DRAM HY5R256/288HC 256/288M-bit 512Kx16/18x32s PRELIMINARY Overview The Rambus D irect R D R A M is a general purpose highperformance m em ory d evice suitable for use in a broad range o f applications including com puter m em ory, graphics,

SL562

Abstract: SP8853 C1R2 Transistor 502k
Contextual Info: SP8853A/B 1•3GHz Professional Synthesiser IC Cd LOCK DETECT 2 1 28 27 26 NC VEE3 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE 21 10 DATA 9 RF INPUT

DIS44

Contextual Info: TARGET KM416RD4C/KM418RD4C Direct RDRAM 64172Mbit RDRAM 4M X 16/18bit Direct RAMBUS DRAM R evision 0.7 S eptem ber 1998 Page 1 ELECTRONSCS Revision 0.7 Septem ber 1998 TARGET KM416RD4C/KM418RD4C Direct RDRAM Revision History Version 0.1 Feb. 1998 - Target

phase sequence detector

Abstract: colpitts oscillator SL562 SP8853
Contextual Info: SP8853A/B 1•3GHz Professional Synthesiser IC Cd LOCK DETECT 2 1 28 27 26 NC VEE3 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE 21 10 DATA 9 RF INPUT