T223 Search Results

Contextual Info: InNET TECHNOLOGIES technologies! w T2230R w Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S : TURNS R A W : 1.4 : 1.4 : 1 : 1 ± 2X ( 1 -3 ) : (2 -4 ) : (7 -9 ) : (8 -1 0 ) INDUCTANCE : ( 1 - 4 ) WITH (2,3) CONN. : 846 TO 1034uH O 0.1 Vac, 10KHz

Contextual Info: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope T223 intended for general

Contextual Info: Philips Components Data sheet status P ro d u ct s p e c ific a tio n date of issue April 1991 BDS644/646/648/650/652 PNP silicon Darlington power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m onolithic Darlington circu it in a

Contextual Info: InNET TECHNOLOGIES technologies! w w T2231R Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S : TURNS R A W : 1 : 1 : 1 : 1 ± 2% ( 1 -3 ) : (2 -4 ) : (7 -9 ) : (8 -1 0 ) INDUCTANCE: ( 1 - 4 ) WITH (2,3) SHORTED - : 369 TO 451 uH O O.IVac, 10KHz

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

Contextual Info: BSP126 JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SO T223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.

Contextual Info: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .

philips bfq

Abstract: FQ236A 236A
Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance

Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS933/935/937/939/941 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope T223 intended for general

Contextual Info: P h ilip s C o m p o n e n ts BDS934/936/938/940/942 D atash eet status Product specification data o f Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope

C6V2 ST

Abstract: c5v6 st C9V1 ST BZV90 BZV90-C24 C5V1 ST
Contextual Info: • ^53^31 N AMER 002.5751 20b H A P X PHILIPS/DISCRETE b?E BZV90 SERIES D SILICON PLANAR VOLTAGE REGULATOR DIODES S ilicon planar voltage regulator diodes, in a SO T223 plastic envelope, intended fo r sta b iliza tio n applica­ tions in th ic k and th in -film circu its.

BT134W-500D/600D2

Contextual Info: bbSBTBl 0025b75 flb^ H A P X Philips Semiconductors Product specification BT134W series Triac N AMER PHI LIP S/D ISCRET E b?E D GENERAL DESCRIPTION QUICK REFERENCE DATA G lass passivated triacs in SO T223 envelopes suitable for surface m ounting. T hey are intended fo r

"marking code" 337

Abstract: BSP120 p088
Contextual Info: • 1^53^31 005550b 4T0 H A P X N AMER P H I L I P S / D I S C R E T E BSP120 b?E 3> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tran sisto r in a m in ia tu re SO T223 envelope and designed fo r use as a line c u rre n t in te rru p te r in telephone sets and fo r a p p lica tio n in relay, high-speed and

T223

Abstract: T223D222
Contextual Info: T223 NTC Thermistor, Epoxy Coating, Kynar Insulated Leads Description: Epoxy coated chip thermistor with white Kynar insulated 28 AWG solid silver-plated copper leads, twisted pair, 30 in [762 mm] overall length Features: - Overall length 30 in [762 mm] - R25 values from 2252 W to 100,000 W

hs sot223

Abstract: T018 ZRT025 ZRT040 AL sot223
Contextual Info: ZRT040 ABSOLUTE M A XIM U M RATING Reverse Current Operating Temperature A grade C grade Storage Temperature T018 S 0 8 , SO T223 75m A Power Dissipation Tamb=25°C T018 300m W S08 625m W SO T223 2W 0 A b o ve 25°C this figure should be linearly derated to 15m A at 125°C

bsp126

Abstract: marking code .gj
Contextual Info: t,3 E ]> • b b S 3 c124 0 0 7 a a n N APC/PHILIPS 11T M S I C B BSP126 SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tra n sisto r in a m in ia tu re SO T223 envelope and designed

Contextual Info: T223 Zetex offers the m ost extensive range of SO T223 devices available, including products com bining 3 watt dissipation, very low saturation voltages and high current handling performance which fully utilizes the SO T223 package capability. Recognising the dem and for such efficient products Zetex has continually expanded the

Contextual Info: PACKAGING INFORMATION T h e fo llo w in g in fo rm atio n applies to th e 3 m a jo r S M packages offered by Z etex i.e. S O T223, S O T89 and SO T23. Features T ap e com plies w ith both EIA481 and IEC Industry S tand ard tap in g specifications A v ailab le in 7" and 13" reel sizes package specific

Contextual Info: SIEMENS SFH6941T LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet i Package Dim ensions in mm FEATURES Transistor O ptocoupler In SO T223 Package End Stackable, 1.27 m m Spacing Low C urrent Input Very High CTR, 150% Typical at lF-1 m A, VCE*0 .S V

1117 fairchild

Abstract: 1117a an1117 FAN1117A-2 FAN1117A
Contextual Info: www.fairchildsemi.com FAN1117A 1A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The FAN1117A and FAN1117A-1.8, -2.5, -2.85, -3.3 and -5 are low dropout three-terminal regulators with 1A output optimized current capability. These devices have been op

Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

LX8117

Abstract: LX8117-25 LX8117-28 LX8117-33 LX8117A LX8117A-25 LX8117A-28 LX8117A-33 U8117-00
Contextual Info: L IN Doc #: 8117 Li\tì\m L X 8 117-xx/8117A-xx M I C R O E L E C T R O N I C S T I h e n f i n i t e P o w e r o f I 8 0 0 mA & 1 A L n n o v a t i o n P r o d u c t i o n DESCRIPTION The LX811 7 /8 1 17A series are positive Low D ropout LD O regulators. At the

eeprom 2408

Abstract: BUT24
Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual October 2002 Digital Audio Solutions SLES038A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

BUT24

Contextual Info: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue