T20 VER 2 Search Results

PD45128163

Abstract: uPD45128163G5-A75-9JF-E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

PD45128163

Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

uPD45128163G5-A75LT-9JF

Abstract: PD45128163 uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).

PD45128163

Abstract: uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I-E 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).

Contextual Info: DATA SHEET 128M bits Mobile RAM EDL1216CASA 8M words x 16 bits Description Pin Configurations The EDL1216CA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the

Contextual Info: DATA SHEET 128M bits Mobile RAM EDL1216BASA 8M words x 16 bits Description Pin Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the

Contextual Info: DATA SHEET 128M bits Mobile RAM EDL1216BASA 8M words x 16 bits Description Pin Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline architecture. All inputs

Contextual Info: DATA SHEET 128M bits Mobile RAM EDL1216AASA 8M words x 16 bits Description Pin Configurations The EDL1216AA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the

AA15

Abstract: AB16 AB17 EP1K100
Contextual Info: EP1K100 Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS(2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)

EPF6016

Abstract: 216 C9 T20 ver 2
Contextual Info: EPF6016 Device Pin-Outs ver. 1.0 Pin Name 1 144-Pin TQFP EPF6016 208-Pin PQFP EPF6016 240-Pin PQFP EPF6016 256-Pin BGA EPF6016 MSEL (2) 33 46 52 T3 nSTATUS (2) 56 80 92 W11 nCONFIG (2) 53 77 89 Y11 DCLK (2) 128 184 212 C10 CONF_DONE (2) 105 150 172 E18 INIT_DONE (3)

EPF6024A

Contextual Info: EPF6024A Device Pin-Outs ver. 1.0 Pin Name 1 144-Pin TQFP EPF6024A 208-Pin PQFP EPF6024A 240-Pin PQFP EPF6024A 256-Pin BGA EPF6024A 256-Pin FineLine BGA EPF6024A MSEL (2) 33 46 52 T3 L5 nSTATUS (2) 56 80 92 W11 K8 nCONFIG (2) 53 77 89 Y11 N8 DCLK (2) 128

2SB185

Abstract: 2SB187 2sb22 2sb186 2sb303 2sb342 2SB375A 2SB273
Contextual Info: 3 O g 03 Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25°C Vc' bo Veto t VfEH Vkbh I, P, «L I kbo 1<BC> Ve« max VKB max VcK I, - 100- 560 6 lm 110 10 2.2 60- 320 10 10m 130 10 3.2 20 15 /i 6 12/1 1.5 100m - 67-330 - - - - - i : With

484-pin BGA

Abstract: AA13 AA15 AB16 EPF10K30E
Contextual Info: EPF10K30E Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)

AA13

Abstract: AA15 AB16 EPF10K30E
Contextual Info: EPF10K30E Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)

diode t25 4 L9

Abstract: diode t25 4 H9 diode t25 4 E5 diode t25 4 G9 T25 4 F8 t25 4 k8 diode t25 4 F6 diodes t25 4 l9 AC22 AE23
Contextual Info: EPF10K100E Device Pin-Outs ver. 1.1 Pin Name 1 240-Pin PQFP (2), (3) 108 124 107 123 52 60 105 121 155 179 2 2 19 26 154 178 3 3 206 238 204 236 208 240 207 239 16 23 10 11 166 190 164 188 162 186 161 185 159 183 158 182 157 181 156 180 153 177 4 4 1 1 50

AA13

Abstract: AA15 AB16 EPF10K50E E22/6/BC237/238/239/EPC16/TL7660IDGKRG4-datasheet
Contextual Info: EPF10K50E Device Pin-Outs ver. 1.0 Pin Name 1 144-Pin TQFP MSEL0 (4) 77 MSEL1 (4) 76 nSTATUS (4) 35 nCONFIG (4) 74 DCLK (4) 107 CONF_DONE (4) 2 INIT_DONE (5) 14 nCE (4) 106 nCEO (4) 3 nWS (6) 142 nRS (6) 141 nCS (6) 144 CS (6) 143 RDYnBUSY (6) 11 CLKUSR (6)

RT3062

Abstract: 2SC1003 2SC685 2SC931 2SC293 2SC830 TA6200 2sc806 bly98 t0114
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

Contextual Info: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History

M4-T1

Abstract: AA10 AC10 AM11 AN10 EP20K1000E
Contextual Info: EP20K1000E I/O Pins ver. 1.0 I/O & VREF Bank 1 1 – – 1 1 1 – – 8 8 8 8 – – 8 8 8 8 8 – 8 8 8 8 8 – – 8 8 8 8 8 – 8 8 8 8 8 – – 8 8 8 8 8 – 8 Pad Number Orientation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

E014

Abstract: upd4564163g5a10b
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

pcmcia ethernet

Abstract: FB52 MAR7 10BT NE2000 SD12 SD13 SD14 SD15 TC5299J
Contextual Info: TC5299J TC5299J FAST ETHERNET PCMCIA LAN CONTROLLER 4FL No. 106 Hsin-Tai Wu Road, Sec. 1, Hsichih, Taipei Hsien, Taiwan R.O.C. TEL: 886-2-2696-1669 FAX: 886-2-2696-2220 http:\\www.tmi.com.tw -1- Ver. 0.1 07/04/01 TC5299J TABLE OF CONTENTS 1 Introduction .3

diode t25 4 k8

Abstract: diode t25 4 B9 diode t25 4 H9 diode t25 4 k5 diode t25 4 L9 diode AA17 diode t25 4 k6 diode t25 4 g8 diode t25 4 G9 T4 w4 DIODE
Contextual Info: Pin Information For The Stratix EP1S10 Device, ver 3.1 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 VREF Bank Pin Name/Function Optional Function s

Diode D25 N12

Abstract: diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 L9 diode t25 4 g8 diode t25 4 k8 diode M21
Contextual Info: Pin Information For The Stratix EP1S10 Device, ver 3.3 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1

AA23

Abstract: AC25 EP20K160E
Contextual Info: EP20K160E I/O Pins ver. 1.3 I/O & Pad Pin/Pad VREF Number Function Bank Orientation 144-Pin TQFP 1 208-Pin PQFP (1) 240-Pin PQFP (1) 356-Pin BGA 484-Pin FineLine BGA 8 8 8 8 – – 8 8 8 8 8 – 8 8 8 8 8 – 8 8 8 8 8 – 8 8 8 8 8 – 8 8 8 8 8 – 8