2SC293 Search Results

2SC2934

Contextual Info: Inchange Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor spe­ cifically designed fo r power amplifiers applications in 8 0 0 — 9 4 0 MHz UHF band. OUTLINE DRAWING D im e n sio n s in m m

2SC293

Abstract: 2SC2937
Contextual Info: Inchange Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base

2SC2939

Abstract: transistor Ic 1A datasheet NPN
Contextual Info: Inchange Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base

2SC2934

Contextual Info: SavantIC Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings Ta=25

T rf transitor

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

Contextual Info: 2SC2933 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)3.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition)15

R27 transistor

Abstract: 2SC2932
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor spe­ cifically designed fo r power amplifiers applications in 8 0 0 — 9 4 0 MHz UHF band. OUTLINE DRAWING Dimensions in mm

Contextual Info: 2SC2938 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)4 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)5.0

2SC2930

Abstract: Fuji 2SC2930
Contextual Info: 2SC2930 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH CURRENT ＮＰＮ三重拡散プレーナ形 高耐圧大電流、高速スイッチング用 HIGH SPEED SWITCHING 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 ：Features

xg transistor

Abstract: OF npn transitor 2SC2933 9T TRANSISTOR T31B
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2933 is silicon OUTLINE DRAWING NPN epitaxial planar typ e transito r Dimensions in mm spe cifica lly designed fo r power am plifiers in 800 ~ 940M H z band. FEATURES • High gain. High e fficie n cy:

TO-247 NPN SILICON POWER TRANSISTORS

Abstract: 2SC2939 transistor TO-247 Outline Dimensions
Contextual Info: SavantIC Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2

Contextual Info: 2SC2932 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition)15

2SC2932

Abstract: RF POWER TRANSISTOR NPN R27 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T YP E DESCRIPTION 2 S C 2 9 3 2 is a s ilic o n NPN e p ita x ia l p la n a r ty p e tra n s is to r spe­ OUTLINE DRAWING D im e n s io n s in m m c if ic a lly designed fo r p o w e r a m p lifie rs a p p lic a tio n s in 8 0 0 —9 4 0

2SC2937

Contextual Info: SavantIC Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2

2SC2937

Abstract: T8W40F1
Contextual Info: SHINDENGEN ELECTRIC MIE li F G AEnaa? D 0QD007b 3 - r * « .3 3 -/ j? h s h e j »Outline Dimensions 5.010 3 O1“1 w e i g h t • 6.1g u n i t - mm • Ratings Maximum 2SC2937 Conditions T 8 W 4 0 fi Unit Storage Tem perature T s tg - 5 5 ~ + 150 °C Junction Tem perature

2SC1626Y

Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768

2SC2939

Contextual Info: 2SC2939 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ºè V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC2937 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2770

Abstract: 2SC2930 ETN36-030 2SC2443 2SD806 ET125 ET127 ETM36-030 ETN01-055 ETN31-055
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

etg36 040d

Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
Contextual Info: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.

2SC2930

Abstract: 2SC2770 ET127 ETN01-055 2SC2443 2SD806 ET125 ETM36-030 ETN31-055 ETN36-030
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

2sc2938

Abstract: g time
Contextual Info: Æà MOS PEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching applications such as switching regulator's,inverters, and conveter. FEATURES: *Collector-Emitter Sustaining Voltagev CEO su« = 40° v (Min)